Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions

A novel Ga N-based vertical heterostructure field effect transistor(HFET) with nonuniform doping superjunctions(non-SJ HFET) is proposed and studied by Silvaco-ATLAS,for minimizing the specific on-resistance(R_(on)A) at no expense of breakdown voltage(BV).The feature of non-SJ HFET lies in the nonuniform doping concentration from top to bottom in the n-and p-pillars,which is different from that of the conventional Ga N-based vertical HFET with uniform doping superjunctions(un-SJ HFET).A physically intrinsic mechanism for the nonuniform doping superjunction(non-SJ) to further reduce R_(on)A at no expense of BV is investigated and revealed in detail.The design,related to the structure parameters of non-SJ,is optimized to minimize the R_(on)A on the basis of the same BV as that of un-SJ HFET.Optimized simulation results show that the reduction in R_(on)A depends on the doping concentrations and thickness values of the light and heavy doping parts in non-SJ.The maximum reduction of more than 51% in R_(on)A could be achieved with a BV of 1890 V.These results could demonstrate the superiority of non-SJ HFET in minimizing R_(on)A and provide a useful reference for further developing the Ga N-based vertical HFETs.     

浅析家族企业融资对其所有权外化的影响及对策

当今家族企业成长的核心是与社会资本的融合,但家族企业融资过程中的所有权外化问题是家族企业研究中的一个十分重要的问题,家族企业如何看待所有权外化,实现所有权部分让渡？更进一步讲,家族企业维护家族对企业所有权与经营权相对控制的路径是什么？这些问题是家族企业成长过程中必须面对的重要问题。它关系到家族企业能否持续发展。本文从家族企业的界定入手,全面分析融资与所有权的关系,多方论证我国家族企业的存续形态,进而提出控制家族企业所有权外化的对策措施。     

Improvement of reverse blocking performance in vertical power MOSFETs with Schottky–drain-connected semisuperjunctions

To enhance the reverse blocking capability with low specific on-resistance,a novel vertical metal-oxidesemiconductor field-effect transistor(MOSFET) with a Schottky-drian(SD) and SD-connected semisuperjunctions(SDD-semi-SJ),named as SD-D-semi-SJ MOSFET is proposed and demonstrated by two-dimensional(2D) numerical simulations.The SD contacted with the n-pillar exhibits the Schottky-contact property,and that with the p-pillar the Ohmic-contact property.Based on these features,the SD-D-semi-SJ MOSFET could obviously overcome the great obstacle of the ineffectivity of the conventional superjunctions(SJ) or semisuperjunctions(semi-SJ) for the reverse applications and achieve a satisfactory trade-off between the reverse breakdown voltage(BV) and the specific on-resistance(R_(on)A).For a given pillar width and n-drift thickness,there exists a proper range of n-drift concentration(N),in which the SD-D-semi-SJ MOSFET could exhibit a better trade-off of R_(on)A-BV compared to the predication of SJ MOSFET in the forward applications.And what is much valuable,in this proper range of N,the desired BV and good trade-off could be achieved only by determining the pillar thickness,with the top assist layer thickness unchanged.Detailed analyses have been carried out to get physical insights into the intrinsic mechanism of R_(on)A-BV improvement in SD-D-semi-SJ MOSFET.These results demonstrate a great potential of SD-D-semi-SJ MOSFET in reverse applications.     

Vertical polarization-induced doping InN/InGaN heterojunction tunnel FET with hetero T-shaped gate

A novel vertical InN/InGaN heterojunction tunnel FET with hetero T-shaped gate as well as polarization-doped source and drain region (InN-Hetero-TG-TFET) is proposed and investigated by Silvaco-Atlas simulations for the first time. Compared with the conventional physical doping TFET devices, the proposed device can realize the P-type source and N-type drain region by means of the polarization effect near the top InN/InGaN and bottom InGaN/InN heterojunctions respectively, which could provide an effective solution of random dopant fluctuation (RDF) and the related problems about the high thermal budget and expensive annealing techniques due to ion-implantation physical doping. Besides, due to the hetero T-shaped gate, the improvement of the on-state performance can be achieved in the proposed device. The simulations of the device proposed here in this work show I_ON of 4.45×10^-5 A/μm, I_ON/I_OFF ratio of 10¹³, and SS_avg of 7.5 mV/dec in InN-Hetero-TG-TFET, which are better than the counterparts of the device with a homo T-shaped gate (InN-Homo-TG-TFET) and our reported lateral polarization-induced InN-based TFET (PI-InN-TFET). These results can provide useful reference for further developing the TFETs without physical doping process in low power electronics applications.     

Sn-Fe@C催化纤维素氢解制备丙酮醇和乳酸

丙酮醇和乳酸都是具有很高利用价值的化学品,充分利用可再生的纤维素资源制备丙酮醇和乳酸,具有重要的意义.本研究采用溶胶-凝胶法并结合惰性气氛高温退火方法制备了Sn-Fe@C系列催化剂,探讨了该催化剂上纤维素水相体系一步氢解制备丙酮醇和乳酸的催化性能.研究发现,丙酮醇和乳酸的收率与催化剂的Sn/Fe比以及焙烧温度具有显著的...     

一种高速高精度PWM开关电源控制新技术

把误差放大、限流比较和锯齿波补偿这 3个环节归结为一个控制环节 ,提出了一个结构简单的 CMOS求和比较器来实现电流模式的脉冲宽度调制 (PWM)型 DC/ DC开关电源的自适应控制 ,使原来无法实现自适应控制的、复杂的控制结构得以简化。并把该求和比较器结构用于一个具体的输出电压为 3.3V的降压型开关电源系统中 ,经 HSPICE模拟证明 ,当负载电流在 0 .0 7～ 8.0 0 A的大范围变化时 ,输出纹波电压只有± 10 m V,精度达到 1%以上。提出的控制思想和结构 ,可以应用于各种高精度的 DC/ DC开关电源PWM控制模块的设计中