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近年来,随着智能电子设备和高频无线通信技术的高速发展,电磁波辐射和污染问题受到越来越多的关注。如何消除电磁波辐射和污染已经成为当代研究的热点问题之一。电磁波吸收是解决电磁波辐射和污染的有效手段之一。金属有机骨架由于其密度低、机构新颖以及易制备等优点有利于电磁波吸收而被广泛地研究。在本文中,通过低温(450°C)热解金属铟有机骨架获得金属铟纳米颗粒/多孔碳(In/C)六边形纳米棒复合物。由于低的热解温度,使得In/C纳米棒电导率较低,从而导致对电磁波的介电损耗低。因此,为了提高In/C纳米棒的电导率,通过引入高电导率的石墨烯(graphene, Gr)纳米片来调节In/C纳米棒的电磁波吸收性能。研究结果表明,Gr纳米片的引入可以有效地改善In/C纳米棒的电磁参数,从而实现对电磁波的高效吸收。在1.30 mm厚度下,In/C-Gr-4复合材料对电磁波的最小反射损耗可以达到-43.7 dB。当厚度减小到1.14 mm时,In/C-Gr-4复合材料的最小反射损耗仍高达-39.3 dB,并且有效吸收带宽为3.7 GHz (从14.3到18.0 GHz)。因此,本工作表明In/C-Gr-4复合材料具有优异的电磁波吸收性能(即薄厚度下高的反射损耗和宽的有效吸收带宽)。 相似文献
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Photoemission oscillation in epitaxially grown van der Waals β-In2Se3/WS2 heterobilayer bubbles
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Thin films of millimeter-scale continuous monolayer WS2 have been grown on SiO2/Si substrate, followed by the deposition of β-In2Se3 crystals on monolayer WS2 to prepare In2Se3/WS2 van de Waals heterostructures by a two-step chemical vapor deposition (CVD) method. After the growth of In2Se3 at elevated temperatures, high densities of In2Se3/WS2 heterostructure bubbles with monolayer to multilayer β-In2Se3 crystals atop are observed. Fluorescence of the resultant β-In2Se3/WS2 heterostructure is greatly enhanced in intensity upon the formation of bubbles, which are evidenced by the Newton's rings in optical image owing to constructive and destructive interference. In photoluminescence (PL) mapping images of monolayer β-In2Se3/monolayer WS2 heterobilayer bubble, significant oscillatory behavior of emission intensity is demonstrated due to constructive and destructive interference. However, oscillatory behaviors of peak position are also observed and come from a local heating effect induced by an excitation laser beam. The oscillatory mechanism of PL is further verified by changing the exterior pressure of bubbles placed in a home-made vacuum chamber. In addition, redshifted in peak position and broadening in peak width are observed due to strain effect during decreasing the exterior pressure of bubbles. 相似文献
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