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1.
Latchup-free ESD protection design with complementary substrate-triggered SCR devices 总被引:2,自引:0,他引:2
Ming-Dou Ker Kuo-Chun Hsu 《Solid-State Circuits, IEEE Journal of》2003,38(8):1380-1392
The turn-on mechanism of silicon-controlled rectifier (SCR) devices is essentially a current triggering event. While a current is applied to the base or substrate of an SCR device, it can be quickly triggered on into its latching state. In this paper, latchup-free electrostatic discharge (ESD) protection circuits, which are combined with the substrate-triggered technique and an SCR device, are proposed. A complementary circuit style with the substrate-triggered SCR device is designed to discharge both the pad-to-V/sub SS/ and pad-to-V/sub DD/ ESD stresses. The novel complementary substrate-triggered SCR devices have the advantages of controllable switching voltage, adjustable holding voltage, faster turn-on speed, and compatible to general CMOS process without extra process modification such as the silicide-blocking mask and ESD implantation. The total holding voltage of the substrate-triggered SCR device can be linearly increased by adding the stacked diode string to avoid the transient-induced latchup issue in the ESD protection circuits. The on-chip ESD protection circuits designed with the proposed complementary substrate-triggered SCR devices and stacked diode string for the input/output pad and power pad have been successfully verified in a 0.25-/spl mu/m salicided CMOS process with the human body model (machine model) ESD level of /spl sim/7.25 kV (500 V) in a small layout area. 相似文献
2.
Yu‐Hsiang Hu Chuh‐Yung Chen Chen‐Chien Wang Yao‐Hui Huang Shao‐Ping Wang 《Journal of polymer science. Part A, Polymer chemistry》2004,42(19):4976-4993
The bulk polymerization of styrene initiated by ?‐caprolactam (CL) and n‐dodecyl mercaptan (RSH) has been explored. This novel polymerization system shows living characteristics. For example, the molecular weight of the resulting polymers increases with conversion, and the system has the ability to form diblock copolymers and so forth. The polymer chain end contains thiol and lactam structures, which we have investigated with Fourier transform infrared, 1H NMR, and 13C NMR techniques. Electron spin resonance spectra and theoretical calculations by the Hartree–Fock methods have been used to examine the mechanism. The results reveal that the initial polymerization starts from thiol via a chain‐transfer reaction, and the propagation proceeds by the insertion of a monomer between the terminal group and the intermediate structure of lactam. Finally, the polymerization kinetics have been examined. The polymerization rate varies linearly with the concentration of CL and RSH, and this confirms the mechanism. © 2004 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 42: 4976–4993, 2004 相似文献
3.
A Hammerstein-based dynamic model for hysteresis phenomenon 总被引:2,自引:0,他引:2
The Hammerstein configuration, which includes a nonlinear static block followed by a linear dynamic block, is applied to model the rate-dependent and temperature-dependent hysteresis phenomenon. The nonlinear static block is realized by a modified Preisach model, which includes both the irreversible and reversible components of magnetization. The linear dynamic block is realized by a low-pass filter, which takes into account the rate-dependent effects of hysteresis. Temperature dependencies are incorporated into the model by fitting the model parameters as piecewise-linear functions of temperature. A procedure is described for the extraction of a single set of model parameters over the frequency, amplitude, and temperature ranges of interest. The theory is verified experimentally 相似文献
4.
McIntyre H. Wendell D. Lin K.J. Kaushik P. Seshadri S. Wang A. Sundararaman V. Ping Wang Song Kim Hsu W.-J. Hee-Choul Park Levinsky G. Jiejun Lu Chirania M. Heald R. Lazar P. Dharmasena S. 《Solid-State Circuits, IEEE Journal of》2005,40(1):52-59
A 4-MB L2 data cache was implemented for a 64-bit 1.6-GHz SPARC(r) RISC microprocessor. Static sense amplifiers were used in the SRAM arrays and for global data repeaters, resulting in robust and flexible timing operation. Elimination of the global clock grid over the SRAM array saves power, enabled by combining the clock information with array select signals. Redundancy was implemented flexibly, with shift circuits outside the main data array for area efficiency. The chip integrates 315 million transistors and uses an 8-metal-layer 90-nm CMOS process. 相似文献
5.
Sung‐Fu Hsu Tzong‐Ming Wu Chien‐Shiun Liao 《Journal of Polymer Science.Polymer Physics》2006,44(23):3337-3347
Poly(3‐hydroxybutyrate) (PHB)/layered double hydroxides (LDHs) nanocomposites were prepared by mixing PHB and poly(ethylene glycol) phosphonates (PEOPAs)‐modified LDH (PMLDH) in chloroform solution. Both X‐ray diffraction data and TEM micrographs of PHB/PMLDH nanocomposites indicate that the PMLDHs are randomly dispersed and exfoliated into the PHB matrix. In this study, the effect of PMLDH on the isothermal crystallization behavior of PHB was investigated using a differential scanning calorimeter (DSC) and polarized optical microscopy. Isothermal crystallization results of PHB/PMLDH nanocomposites show that the addition of 2 wt % PMLDH into PHB induced more heterogeneous nucleation in the crystallization significantly increasing the crystallization rate and reducing their activation energy. By adding more PMLDH into the PHB probably causes more steric hindrance of the diffusion of PHB, reducing the transportation ability of polymer chains during crystallization, thus increasing the activation energy. The correlation among crystallization kinetics, melting behavior and crystalline structure of PHB/PMLDH nanocomposites can also be discussed. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 3337–3347, 2006 相似文献
6.
Hsu S. Alvandpour A. Mathew S. Shih-Lien Lu Krishnamurthy R.K. Borkar S. 《Solid-State Circuits, IEEE Journal of》2003,38(5):755-761
This paper describes a 32-KB two-read, one-write ported L0 cache for 4.5-GHz operation in 1.2-V 130-nm dual-V/sub TH/ CMOS technology. The local bitline uses a leakage-tolerant self reverse-bias (SRB) scheme with nMOS source-follower pullup access transistors, while preserving robust full-swing operation. Gate-source underdrive of -220 mV on the bitline read-select transistors is established without external bias voltages or gate-oxide overstress. Device-level measurements in the 130-nm technology show 72/spl times/ bitline active leakage reduction, enabling low-V/sub TH/ usage, 40% bitline keeper downsizing, and 16 bitcells/bitline. 11% faster read delay and 2/spl times/ higher dc noise robustness are achieved compared with high-performance dual-V/sub TH/ bitline scheme. Sustained performance and robustness benefits of the SRB technique against conventional dynamic bitline with scaling to 100- and 70-nm technology is also presented. 相似文献
7.
A design-for-testability scheme for detecting CMOS analog faults was reported by Favalli et al. (see ibid., vol.25, no.5, p.1239-46, 1990). The authors propose two alternative designs, one for small circuits and another for large circuits, which require significantly less area overhead (about 1/4 to 1/3) than that of Favalli's design. With the proposed modification in the first design, the untestable problem, which occurred in Favalli's design, can be alleviated. Furthermore, the proposed schemes are also fit to be implemented in VLSI circuits 相似文献
8.
J. Shin Y. Hsu T. C. Hsu G. B. Stringfellow R. W. Gedridge 《Journal of Electronic Materials》1995,24(11):1563-1569
GalnSb alloys as well as the constituent binaries InSb and GaSb have been grown by organometallic vapor phase epitaxy using
the new antimony precursor trisdimethylaminoantimony (TDMASb) combined with conventional group III precursors trimethylindium
(TMIn) and trimethylgallium (TMGa). InSb layers were grown at temperatures between 275 and 425°C. The low values of V/III
ratio required to obtain good morphologies at the lowest temperatures indicate that the pyrolysis temperature is low for TDMASb.
In fact, at the lowest temperatures, the InSb growth efficiency is higher than for other antimony precursors, indicating the
TDMASb pyrolysis products assist with TMIn pyrolysis. A similar, but less pronounced trend is observed for GaSb growth at
temperatures of less than 500°C. No excess carbon contamination is observed for either the InSb or GaSb layers. Ga1-xInxSb layers with excellent morphologies with values of x between 0 and 0.5 were grown on GaSb substrates without the use of
graded layers. The growth temperature was 525°C and the values of V/III ratio, optimized for each value of x, ranged between
1.25 and 1.38. Strong photoluminescence (PL) was observed for values of x of less than 0.3, with values of halfwidth ranging
from 13 to 16 meV, somewhat smaller than previous reports for layers grown using conventional precursors without the use of
graded layers at the interface. The PL intensity was observed to decrease significantly for higher values of x. The PL peak
energies were found to track the band gap energy; thus, the luminescence is due to band edge processes. The layers were all
p-type with carrier concentrations of approximately 1017 cm3. Transmission electron diffraction studies indicate that the Ga0.5In0.5 Sb layers are ordered. Two variants of the Cu-Pt structure are observed with nearly the same diffracted intensities. This
is the first report of ordering in GalnSb alloys. 相似文献
9.
Cun Feng Fan David A. Waldman Shaw Ling Hsu 《Journal of Polymer Science.Polymer Physics》1991,29(2):235-246
Raman mechanical spectroscopy was used to examine interfacial effects on the stress distribution in model polydiacetylene fiber/epoxy composites. Epoxy release agents were coated on fiber surfaces to modify the interfacial adhesion properties. The modified fiber surfaces were then characterized by scanning electron microscopy and x-ray photoelectron spectroscopy as well as optical microscopy. No difference in the maximum stress value or stress distribution was observed for the two types of fibers, coated or uncoated, used in composites. This suggests that adhesion properties at the composite interface do not affect tensile stress transfer efficiency nor, therefore, the composite tensile modulus along the fiber axis direction in uniaxial composites. Experimental data were also compared with theoretical calculations assuming perfect bonding between fiber and matrix, and idealized frictional force transfer mechanism at the fiber–matrix interface. 相似文献
10.
Theoretical studies point to significant improvements in the performance of semiconductor laser amplifiers by injecting carriers with pulsed electric currents of sub-nanosecond duration. A pulsed Fabry-Perot amplifier (FPA) is most sensitive to input lightwave at the instant the carrier density is crossing the critical region, and gives a sharply pulsed sampling effect on the input lightwave signal. Compared with a FPA operating at subcritical electron density, the pulsed amplifier gives much higher gain, peak power, and bandwidth. In fact, pulsed operation of a FPA is also expected to give significantly higher gain and about the same peak output power as a traveling wave amplifier. Pulsed operation also improves the performance of a traveling wave amplifier by attenuating its internally reflected waves 相似文献