硬件锁中的无线USB

无线USB的前途似乎无与伦比——它能消除那些把大家桌面弄得像鼠窝一样小小的不怎么灵便的电缆。但事实上,只有需要大量的外设时无线USB设备才有优势,而且它必须非常微型而廉价,否则带来的麻烦远多于缠绕的电缆。因此,插在PC USB端口作为无线基站的硬件锁就必须有尽可能高的集成度。但一片芯片中要包含USB有线接口、控制器、无线基带和RF电路,技术上还无法实现。下面我们将看到一家供应商Wisalr的一种可量产参考设计,它是如何接近于解决这个问题的。     

Simulation of magnetic component models in electric circuitsincluding dynamic thermal effects

It is essential in the simulation of power electronics applications to model magnetic components accurately. In addition to modeling the nonlinear hysteresis behavior, eddy currents and winding losses must be included to provide a realistic model. In practice the losses in magnetic components give rise to significant temperature increases which can lead to major changes in the component behavior. In this paper a model of magnetic components is presented which integrates a nonlinear model of hysteresis, electro-magnetic windings and thermal behavior in a single model for use in circuit simulation of power electronics systems. Measurements and simulations are presented which demonstrate the accuracy of the approach for the electrical, magnetic and thermal domains across a variety of operating conditions, including static thermal conditions and dynamic self heating     

Experimental realization of a new transistor

The authors report on the fabrication and characteristics of a unipolar, three-terminal, resonant-tunneling transistor. The operating principle of this new transistor is based on the fact that the quantum mechanical resonant-tunneling probability of hot electrons between the emitter and the collector is switched almost completely on and off, when either the base or the collector bias is swept. The emitter injects hot electrons to the second lowest subband of a thin (100 Å in this work) GaAs quantum well. Subsequently, the hot electrons will either resonantly tunnel to the collector, or relax to the lowest subband and contribute to the base current. As a result of resonant transmission, at 77 K the current-voltage characteristics of the transistor display negative differential resistance with extremely large (4691) peak-to-valley ratio. Furthermore, when biased near resonance, a maximum DC current gain of ~1.2 and a maximum AC current gain of ~11.9 were observed. The first use of a new `tunneling-in and tunneling-out' scheme in contacting a thin quantum well is also demonstrated     

A comparison of various measured and calculated shieldingeffectiveness data for a wire cage

Considers the shielding effectiveness (SE) of a wire cage structure (2 m cube). The SE is predicted using various analytical approximations and measured using a number of different methods. Both near-field and far-field coupling through the mesh are considered. The results show that calculated and measured SE data can cover a large range of values depending on the configuration used. Upper and lower SE bounds for the near and far-field cases are discussed     

Effect of ion energy on hydrogen diffusion in n- and p-GaAs

The ion energy during electron cyclotron resonance (ECR) plasma hydrogenation is found to have a strong effect on both the effective diffusivity and solubility of hydrogen in n⁺ and p⁺ GaAs. For fixed plasma exposure conditions (30 min, 250°C) the diffusion depths for -150 V acceleration voltage are ~50 and ~100% larger, respectively, in p⁺- and n⁺-GaAs compared to 0 V acceleration voltage. The smaller incorporation depths at lower ion energy coincide with much larger peak hydrogen concentrations and higher apparent thermal stability of passivated dopants     

A wavelet-based procedure for process fault detection

To detect faults in a time-dependent process, we apply a discrete wavelet transform (DWT) to several independently replicated data sets generated by that process. The DWT can capture irregular data patterns such as sharp "jumps" better than the Fourier transform and standard statistical procedures without adding much computational complexity. Our wavelet coefficient selection method effectively balances model parsimony against data reconstruction error. The few selected wavelet coefficients serve as the "reduced-size" data set to facilitate an efficient decision-making method in situations with potentially large-volume data sets. We develop a general procedure to detect process faults based on differences between the reduced-size data sets obtained from the nominal (in-control) process and from a new instance of the target process that must be tested for an out-of-control condition. The distribution of the test statistic is constructed first using normal distribution theory and then with a new resampling procedure called "reversed jackknifing" that does not require any restrictive distributional assumptions. A Monte Carlo study demonstrates the effectiveness of these procedures. Our methods successfully detect process faults for quadrupole mass spectrometry samples collected from a rapid thermal chemical vapor deposition process     

Magnetism in SiC implanted with high doses of Fe and Mn

High concentrations (0.1–5 at.%) of Mn or Fe were introduced into the near-surface region (≤2000 Å) of 6H-SiC substrates by direct implantation at ～300°C. After annealing at temperatures up to 1000°C, the structural properties were examined by transmission electron microscopy (TEM) and selected-area diffraction pattern (SADP) analysis. The magnetic properties were examined by SQUID magnetometry. While the Mn-implanted samples were paramagnetic over the entire dose range investigated, the Fe-implanted material displayed a ferromagnetic contribution present at <175 K for the highest dose conditions. No secondary phases were detected, at least not to the sensitivity of TEM or SADP.