High-resolution photonics-based interference suppression filter with wide passband

A new topology for a photonic signal processor, which overcomes the basic recursive frequency response problem that limits the passband range, is presented. The structure is based on a new multiple-wavelength offset-cavity structure that is cascaded with a series of unbalanced delay line structures. This not only can synthesize a very narrow notch response with good shape factor but also permits a multifold extension of the free spectral range (FSR) and passband width. Results on the interference mitigation filter demonstrate a stopband of 1% of center frequency and a fourfold increase in the FSR and passband width, while also having a very small shape factor, in excellent agreement with predictions.     

Wavelength-tunable 40-GHz picosecond harmonically mode-locked fiber laser source

We demonstrate a novel 40-GHz mode-locked fiber laser that utilizes a single active device to provide both gain and mode-locking. The laser produces pulses as short as 2.2 ps, is tunable over a 27-nm band centered at 1553 nm, and exhibits long-term stability without cavity-length feedback control. The pulse train at 1556 nm was used in a 40-Gb/s transmission experiment over 45 km with a low 0.4-dB power penalty.     

Impact of lead-free soldering processes on the performance of signal relay contacts

Various legislations, rules and regulations in Europe [Restrictions of the use of certain hazardous substances in electrical and electronic equipment (ROHS)] and Japan (Recycling Law for Home Electric Appliances) have either targeted restrictions or a full ban on the use of lead, to be enforced from 2001, 2005, and 2006 onwards. Next to these regulations, marketing arguments are becoming more and more important for so called "GREEN" products. Up to now, mainly tin-lead alloys have been used in electronics. The process temperatures usually applied have been in the range of 230/spl deg/C. All currently discussed lead-free alternatives for professional electronics need process temperatures which are at least 30/spl deg/C higher. In addition, the process duration is significantly longer. The combination of higher process temperatures and longer duration together results in a significant thermal stress on the precision mechanics of the relay. In order to guarantee proper functioning of the relay after the solder process with maximum process temperatures of 255/spl deg/C, the dimensional changes of the plastic parts must be less than a few micrometers in order to guarantee stable contact forces. The outgassing of the used insulating and sealing materials must be minimal in order not to pollute or contaminate the contacts. With the lead-free version of the IM relay, an identical performance and the same reliability during electrical and climatic endurance tests can be expected, even though relays were processed with typical lead-free soldering processes with temperatures up to 255/spl deg/C.     

High-frequency analysis of the Ellipticus antenna

Efficient numerical solution techniques have been developed and used to examine the electromagnetic fields that can be developed in the working volume of the CW Ellipticus antenna operated at frequencies from 100 kHz to 1 GHz. An exponentially tapered transition section is designed to obtain the desired illumination pattern in the working volume. The input transition section is needed for impedance matching and to drive efficiently the Ellipticus antenna. A parametric study is performed to ascertain the performance of the Ellipticus antenna for frequencies up to 1 GHz     

A fully soft-switched extended-period quasi-resonantpower-factor-correction circuit

This paper presents the design criteria, procedure, and implementation of a soft-switched power-factor-correction (PFC) circuit based on the extended-period quasi-resonant (EPQR) principles. All power electronic devices including switches and diodes in the circuit are fully soft switched. The design method is demonstrated in a prototype circuit. The operating principles are confirmed with computer simulation and experimental results. A comparison of the EP-QR operation and zero-voltage-transition (ZVT) pulse-width modulation (PWM) method     

Densification involved in the UV-based photosensitivity of silicaglasses and optical fibers

A comprehensive survey of photosensitivity in silica glasses and optical fiber is reviewed. Recent work on understanding the mechanisms contributing to germanium or aluminum doped fiber photosensitivity is discussed within the framework of photoelastic densification models     

Electrical linewidth test structures fabricated in monocrystallinefilms for reference-material applications

The physical widths of reference features incorporated into electrical linewidth test structures patterned in films of monocrystalline silicon have been determined from Kelvin voltage measurements. The films in which the test structures are patterned are electrically insulated from the bulk-silicon substrate by a layer of silicon dioxide provided by SIMOX (Separation by the IMplantation of OXygen) processing. The motivation is to facilitate the development of linewidth reference materials for critical-dimension (CD) metrology-instrument calibration. The selection of the (110) orientation of the starting silicon and the orientation of the structures' features relative to the crystal lattice enable a lattice-plane-selective etch to generate reference-feature properties of rectangular cross section and atomically planar sidewalls. These properties are highly desirable for CD applications in which feature widths are certified with nanometer-level uncertainty for use by a diverse range of CD instruments. End applications include the development and calibration of new generations of CD instruments directed at controlling processes for manufacturing devices having sub-quarter-micrometer features     

Three-dimensional atom probe study of the segregation behaviour of Ni91Pt9 alloy after sputtering

To investigate local ordering and segregation phenomenon in a Ni91Pt9-alloy after sputtering and annealing a 3D optical atom probe (OAP) has been used. The specimen tips have been prepared from polycrystalline samples. To sputter the samples a separate preparation chamber with a scannable Ar-sputter-gun is connected to the OAP vessel. When necessary, the sample can be electrically heated to induce segregation and cure the altered layer. After a heat treatment of a Ni91 at. %Pt 9 at.% specimen at 1100 K the surface of a (111)-oriented specimen is enriched in platinum by a factor of two in relation to the bulk. The phenomenon of short-range ordering has been investigated on the surface and in the subsurface volume. A 3D reconstruction of this annealed NiPt specimen shows regions with high concentration of platinum that gives an indication at short-range ordering. Uniform sputtering of the tip without a heat treatment induces a decisive depletion of Pt on the surface and the following subatomic layers. The atom-probe results of specimens in thermal equilibrium are in close agreement to further surface sensitive results obtained from Ion Scattering Spectroscopy (ISS) and Auger Electron Spectroscopy (AES).     

Tunable wavelength filters based on nonlinear optical interactionsin semiconductor amplifiers

A novel class of narrow-band tunable wavelength filters is proposed and evaluated. Wavelength selectivity of the proposed filters Is derived from the finite time response of an optical nonlinearity. The nonlinearity is gain saturation in semiconductor optical amplifier structures. The filters are shown to have very narrow passbands tunable over the entire semiconductor gain bandwidth. The key to filter implementation is a device configuration in which the wave-mixing products can be isolated from the amplified inputs. Three integrated optics compatible configurations are considered and shown to have high filter throughputs 34 to 180% and subangstrom bandwidths