全文获取类型
收费全文 | 17586篇 |
免费 | 1042篇 |
国内免费 | 161篇 |
专业分类
化学 | 8931篇 |
晶体学 | 118篇 |
力学 | 374篇 |
综合类 | 3篇 |
数学 | 1159篇 |
物理学 | 3265篇 |
无线电 | 4939篇 |
出版年
2024年 | 31篇 |
2023年 | 235篇 |
2022年 | 276篇 |
2021年 | 456篇 |
2020年 | 373篇 |
2019年 | 415篇 |
2018年 | 347篇 |
2017年 | 357篇 |
2016年 | 630篇 |
2015年 | 511篇 |
2014年 | 690篇 |
2013年 | 1089篇 |
2012年 | 1186篇 |
2011年 | 1321篇 |
2010年 | 835篇 |
2009年 | 839篇 |
2008年 | 1145篇 |
2007年 | 1013篇 |
2006年 | 973篇 |
2005年 | 927篇 |
2004年 | 792篇 |
2003年 | 651篇 |
2002年 | 636篇 |
2001年 | 453篇 |
2000年 | 390篇 |
1999年 | 298篇 |
1998年 | 221篇 |
1997年 | 218篇 |
1996年 | 222篇 |
1995年 | 165篇 |
1994年 | 139篇 |
1993年 | 115篇 |
1992年 | 119篇 |
1991年 | 85篇 |
1990年 | 88篇 |
1989年 | 65篇 |
1988年 | 57篇 |
1987年 | 36篇 |
1986年 | 22篇 |
1985年 | 44篇 |
1984年 | 35篇 |
1983年 | 40篇 |
1982年 | 31篇 |
1981年 | 31篇 |
1980年 | 25篇 |
1979年 | 24篇 |
1978年 | 19篇 |
1976年 | 17篇 |
1975年 | 17篇 |
1973年 | 13篇 |
排序方式: 共有10000条查询结果,搜索用时 10 毫秒
1.
Jaehoon Lee Seongha Kim Yonghoon Kim Yunje Oh Seongtaek Hwang Jichai Jeong 《Lightwave Technology, Journal of》2003,21(2):521-527
Optically preamplified receiver performance according to the vestigial sideband (VSB) filtering has been numerically investigated for 40-Gb/s optical signals modulated with nonreturn-to-zero, duobinary nonreturn-to-zero (NRZ), return-to-zero (RZ), carrier-suppressed RZ, and duobinary carrier-suppressed RZ formats. The VSB filtering enables the spectral widths of NRZ, duobinary NRZ, and RZ signals to be reduced without severe power penalties at the receiver. On the other hand, carrier-suppressed RZ and duobinary carrier-suppressed RZ signals have no large advantages over VSB filtering because of the characteristics of their signals. Our results suggest that RZ signals are the most suitable modulation format for VSB filtering, without considering the filter loss, because of the tolerance of the intersymbol interference and a large spectral width. However, duobinary NRZ signals are the most suitable modulation format for VSB filtering, considering the filter loss, because of their narrow spectral width. 相似文献
2.
Chel-Jong Choi Tae-Yeon Seong Key-Min Lee Joo-Hyoung Lee Young-Jin Park Hi-Deok Lee 《Electron Device Letters, IEEE》2002,23(4):188-190
The leakage mechanism in p+/n shallow junctions fabricated using Co silicidation and shallow trench isolation processes has been investigated using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and TSUPREM-4 simulation results show that dopant profiles bend upward near the edge of the active region. The formation of the abnormal profile is attributed to transient enhanced diffusion induced by source/drain implantation. Based on the TEM and simulation results, it is suggested that the shallower junctions formed near the active edge can serve as a source for leakage current in the silicided p+ /n shallow junctions 相似文献
3.
The effect of high oxide field stress is studied using capacitance-time (C-t) measurements of MOS capacitors. The stress results in parallel shifts of the C-t curve along the time axis. The flatband voltage shift ΔVFB obtained from the initial deep depletion capacitance C(t=0+) follows the same trend as that from the high-frequency C-V characteristics. However, the discrepancy between the two flatband voltages becomes larger as the stress increases due to the effect of interface charges on C-t characteristics. The flatband voltage difference is converted to interface trap density, showing a steady increase of interface trap density with stress, similar to that from low-frequency C-V measurements 相似文献
4.
We have rigorously calculated for the first time all the inter-electrode and pixel capacitances of Thin-Film Transistor Liquid Crystal Displays using the electrical energy distribution inside a liquid crystal cell. The energy distribution is obtained from the three-dimensional profiles of potential distribution and molecular director. The dynamic equation of continuum theory for liquid crystals is described in a tensorial form in order to maintain the equivalence of n and -n . The effects of lateral fields generated by multiple electrodes of finite sizes are taken into account in the simulation. As a numerical technique, we used a finite difference method which is suitable for the highly non-linear equations. As a result, we confirmed that the pixel capacitance for our pixel structure is about 40% larger than that of the conventional approach. It is also revealed that the gate-common and gate-data inter-electrode capacitances are not negligible. 相似文献
5.
Seo K. Heiblum M. Knoedler C.M. Oh J.E. Pamulapati J. Bhattacharya P. 《Electron Device Letters, IEEE》1989,10(2):73-75
A high-gain ballistic hot-electron device is described. The GaAs-AlGaAs heterostructure device, with a 21-mm-thick pseudomorphic In 0.12Ga0.88As base, had a current gain of 27 at 77 K and 41 at 4.2 K. As characteristically seen in ballistic devices, transfer into the L valley limited the maximum gain. The Γ-L valley separation in the strained In0.12Ga0.88As was estimated to be about 380 meV 相似文献
6.
Yong Bae Park Keum Cheol Hwang Ikmo Park 《Microwave and Wireless Components Letters, IEEE》2008,18(3):152-154
A tapered coaxial tip in a parallel plate waveguide is investigated. A boundary-value problem of electromagnetic scattering from a tapered coaxial monopole is solved rigorously based on the Fourier transform, eigenfunction expansion, and mode matching. Scattering parameters are represented in a series and computed to understand the behavior of the scattering in terms of the coaxial tip geometry. 相似文献
7.
Investigation into Polarization of Unloaded and Loaded Microstrip Square-Ring Antennas 总被引:1,自引:0,他引:1
The polarization characteristic of unloaded and loaded square-ring microstrip antennas is investigated. Several different loading types like single-stub, dual-stub, notch, gap and shorting-pin are considered and their effects are studied. Loading enables feeding using a 50-Omega probe. The simulation and measurement results show that the loading techniques excite a loaded TMy 11 mode that is orthogonal to the unloaded TMx 11 mode. This indicates that by loading the ring antenna its polarization can be switched adaptively. However, the purity of the loaded and unloaded modes depends on the loading type. For some loading types like gap and shorting-pin, the excitation of the unloaded mode seems negligible, in comparison to the loadings by stub and notch. For the stub and notch loaded antennas the unloaded mode is also present, and its excitation efficiency is frequency dependent. Thus, their polarization plane, which is due to both loaded TMy 11 and unloaded TMx 11 modes, also becomes frequency dependant. The results of this investigation can be useful in selecting the loading methods for high-impedance microstrip ring antennas, and control of their impedance and polarization. The knowledge of the antenna polarization is essential in communications, and its dependence on the loading type can be used as an important parameter in design of adaptive antennas and sensors. 相似文献
8.
Takeshi Kondo Sang Min Lee Michal Malicki Benoit Domercq Seth R. Marder Bernard Kippelen 《Advanced functional materials》2008,18(7):1112-1118
We report on a single‐layer organic memory device made of poly(N‐vinylcarbazole) embedded between an Al electrode and ITO modified with Ag nanodots (Ag‐NDs). Devices exhibit high ON/OFF switching ratios of 104. This level of performance could be achieved by modifying the ITO electrodes with some Ag‐NDs that act as trapping sites, reducing the current in the OFF state. Temperature dependence of the electrical characteristics suggest that the current of the low‐resistance state can be attributed to Schottky charge tunnelling through low‐resistance pathways of Al particles in the polymer layer and that the high‐resistance state can be controlled by charge trapping by the Al particles and Ag‐NDs. 相似文献
9.
Application-level performance is a key to the adoption and success of the CDMA 2000. To predict this performance in advance,
a detailed end-to-end simulation model of a CDMA network is built to include application traffic characteristics, network
architecture, network element details using the proposed simulation methodology. We assess the user-perceived application
performance when a RAN and a CN adopt different transport architectures such as ATM and IP. To evaluate the user-perceived
quality of voice service, we compare the end-to-end packet delay for different vocoder schemes such as G.711, G.726 (PCM),
G.726 (ADPCM), and vocoder bypass scheme. By the simulation results, the vocoder bypass scenario shows 30% performance improvement
over the others. We also compare the quality of voice service with and without DPS scheduling scheme. We know that DPS scheme
keep the voice delay bound even if the service traffic is high. For data packet performance, HTTP v.1.1 shows better performance
than that of HTTP v.1.0 due to the pipelining and TCP persistent connection. We may conclude that IP transport technology
is better solution for higher FER environment since the packet overhead of IP is smaller than that of ATM for web browsing
data traffic, while it shows opposite effect to the small size voice packet in RAN architecture. We show that the 3G-1X EV-DO
system gives much better packet delay performance than 3G-1X RTT. The main conclusion is that end-to-end application-level
performance is affected by various elements and layers of the network and thus it must be considered in all phases of the
development process.
Jae-Hyun Kim He received the B.S., M.S., and Ph.D. degrees, all in computer science and engineering, from Hanyang University, Ansan, Korea,
in 1991, 1993, and 1996 respectively. In 1996, he was with the Communication Research Laboratory, Tokyo, Japan, as a Visiting
Scholar. From April 1997 to October 1998, he was a post-doctoral fellow at the department of electrical engineering, University
of California, Los Angeles. From November 1998 to February 2003, he worked as a member of technical staff in Performance Modeling
and QoS management department, Bell laboratories, Lucent Technologies, Holmdel, NJ. He has been with the department of electrical
engineering, Ajou University, Suwon, Korea, as an assistant professor since 2003. His research interests include QoS issues
and cross layer optimization for high-speed wireless communication. Dr. Kim was the recipient of the LGIC Thesis Prize and
Samsung Human-Tech Thesis Prize in 1993 and 1997, respectively. He is a member of the Korean Institute of Communication Sciences
(KICS), Korea Institute of Telematics and Electronis (KITE), Korea Information Science Society (KISS), and IEEE.
Hyun-Jin Lee received the B.S. degree in electrical engineering from Ajou University, Suwon, Korea, in 2004, and is working toward the
M.S. degree and Ph. D. degree in electrical engineering at Ajou University. He has been awarded Samsung Human-Tech Thesis
Prize in 2004. His research interests QoS, especially network optimization and wireless packet scheduling. He is a member
of the KICS.
Sung-Min Oh received the B.S. and M. S. degrees in electrical engineering form Ajou University, Suwon, Korea, in 2004, and is working
toward the Ph. D. degree in electrical engineering at Ajou University. His research interests QoS performance analysis and
4G network. He is a member of the KICS.
Sung-Hyun Cho received his B.S., M.S., and Ph.D. in computer science and engineering from Hanyang University, Korea, in 1995, 1997, and
2001, respectively. From 2001 to 2005, he has been with Samsung Advanced Institute of Technology, where he has been engaged
in the design and standardization of MAC and upper layers of B3G, IEEE 802.16e, and WiBro systems. He is currently a MAC part
leader in the telecommunication R&D center of Samsung Electronics. His research interests include 4G air interface design,
radio resource management, cross layer design, and handoff in wireless systems. 相似文献
10.
Sungyong Kim Lingxin Chen Sangyeop Lee Gi Hun Seong Jaebum Choo Eun Kyu Lee Chil-Hwan Oh Sanghoon Lee 《Analytical sciences》2007,23(4):401-405
A rapid DNA analysis has been developed based on a fluorescence intensity change of a molecular beacon in a PDMS microfluidic channel. Recently, we reported a new analytical method of DNA hybridization involving a PDMS microfluidic sensor using fluorescence energy transfer (FRET). However, there are some limitations in its application to real DNA samples because the target DNA must be labelled with a suitable fluorescent dye. To resolve this problem, we have developed a new DNA microfluidic sensor using a molecular beacon. By monitoring the change in the restored fluorescence intensity along the channel length, it is possible to rapidly detect any hybridization of the molecular beacon to the target DNA. In this case, the target DNA does not need to be labelled. Our experimental results demonstrate that this microfluidic sensor using a molecular beacon is a promising diagnostic tool for rapid DNA hybridization analysis. 相似文献