Lateral ion implant straggle and mask proximity effect

Lateral scattering of retrograde well implants is shown to have an effect on the threshold voltage of nearby devices. The threshold voltage of both NMOSFETs and PMOSFETs increases in magnitude for conventional retrograde wells, but for triple-well isolated NMOSFETs the threshold voltage decreases for narrow devices near the edge of the well. Electrical data, SIMS, and SUPREM4 simulations are shown that elucidate the phenomenon.     

Widely tunable bottom-emitting vertical-cavity SOAs

We present bottom-emitting tunable vertical-cavity semiconductor optical amplifiers (VCSOAs) with an effective wavelength tuning range of >20 nm. These devices utilize a high reflectivity micromechanically tunable Bragg mirror as the back reflector. Compared with our first generation tunable VCSOAs, the bottom-emitting devices exhibit a two-fold increase in the effective tuning range as well as a five-fold reduction in the required tuning voltage.     

Vascular morphology by three-dimensional magnetic resonance imaging

A three-dimensional examination of blood vessels is provided using MR data from seven cases. The vascular surfaces are constructed with an algorithm that automatically follows the selected artery or vein and generates a projected three-dimensional gradient shaded image. Fast 3DFT pulse sequences were optimized to enhance the time-of-flight contrast of the intravascular region. By increasing the surface threshold value in a three-dimensional head study, the flesh of a patient's face was peeled away to demonstrate the superfacial temporal artery. Gated cardiac images show the great vessels and cardiac chambers. A three-dimensional view of the aorta shows an irregular surface in the vicinity of an adrenal tumor. 3D MR exams provide a non-invasive technique for assessing vascular morphology in a clinical setting.     

Negative luminescence from mid-wave infrared HgCdTe diode arrays

A self-referencing, optical modulation technique was used to measure the negative luminescence efficiencies of an array of mid-wave infrared HgCdTe photodiodes with cutoff wavelength 4.6 μm as a function of sample temperature. The internal efficiency at a wavelength of 4 μm was 93% at 295 K, and nearly independent of temperature in the 240–300 K range. This corresponds to an apparent temperature reduction >50 K at room temperature and >30 K at 240 K. Moreover, the reverse-bias saturation current density was only 0.13 A/cm². The measured transmission and emission spectra were simulated using empirical HgCdTe absorption formulas from the literature.     

Genetic algorithms in engineering electromagnetics

This paper presents a tutorial and overview of genetic algorithms for electromagnetic optimization. Genetic-algorithm (GA) optimizers are robust, stochastic search methods modeled on the concepts of natural selection and evolution. The relationship between traditional optimization techniques and the GA is discussed. Step-by-step implementation aspects of the GA are detailed, through an example with the objective of providing useful guidelines for the potential user. Extensive use is made of sidebars and graphical presentation to facilitate understanding. The tutorial is followed by a discussion of several electromagnetic applications in which the GA has proven useful. The applications discussed include the design of lightweight, broadband microwave absorbers, the reduction of array sidelobes in thinned arrays, the design of shaped-beam antenna arrays, the extraction of natural resonance modes of radar targets from backscattered response data, and the design of broadband patch antennas. Genetic-algorithm optimization is shown to be suitable for optimizing a broad class of problems of interest to the electromagnetic community. A comprehensive list of key references, organized by application category, is also provided     

Pocket pagers in lots of one CIM

The Fusion program, a method for agile, flexible computer integrated manufacturing (CIM) at Motorola's Paging Products Group, is discussed. Fusion's CIM and automated assembly system can manufacture a wide variety of different products on the same production line. The development of the Fusion program and how it differs from its predecessor, the Bandit program, are described     

Multi-emitter Si/GexSi1-x heterojunctionbipolar transistor with no base contact and enhanced logic functionality

We demonstrate multi-emitter Si/Ge_xSi_1-x n-p-n heterojunction bipolar transistors (HBT's) which require no base contact for transistor operation. The base current is supplied by the additional emitter contact under reverse bias due to the heavy doping of the emitter-base junction. Large-area HBT test structures exhibit good transistor characteristics, with current gain β≈400 regardless of whether the base current is supplied by a test base electrode or one of the emitter contacts. These devices have enhanced logic functionality because of emitter contact symmetry. Since device fabrication does not require base electrode formation, the number of processing steps can be reduced without significant penalty to HBT performance     

The Systematics of Muonium Hyperfine Constants

The hyperfine constants for muonium in elemental and binary inorganic solids suggest formation of three different families of defect centre, with distinct electronic structures. The overall range of values, spanning nearly five orders of magnitude, and their correlation with host properties such as band gap and electron affinity, reveal a deep-to-shallow instability which has profound implications for the electrical properties of hydrogen impurity in electronic materials, both semiconducting and dielectric.     

Bimodal fission in binary and ternary spontaneous fission of 252Cf

The hot bimodal fission of ²⁵²Cf is reexamined with new high-statistics data. We constructed a γ-γ-γ coincidence cube for binary fission and LCP-gated γ-γ matrix for ternary fission. By identifying the secondary fission fragments from their γ-ray transitions, we measured the yields for various fission splits. The normal neutron yield distribution is found to be Gaussian for Xe-Ru. However, the binary fission split of Ba-Mo is found to exhibit a bimodal neutron distribution with the “hot mode” corresponding to ≈3.1% of the total yield. In α ternary fission, the first measurements of yields for specific fission splits are presented. The Te-α-Ru and Xe-α-Mo neutron yields fit well with a single mode, but the Ba-α-Zr split shows evidence for an enhanced hot mode with an intensity of ≈13.8% of the normal mode. The text was submitted by the authors in English.