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We propose a standardization procedure that provides a convenient, quantitative and reproducible laboratory-based method for measuring the state of polarization (SOP) fluctuations produced by polarization varying devices. This method is based on the SOP distributions generated by commercial polarization scramblers. We show that these devices generate distributions of the maximum change of the SOP (in a given sample time) that follow Rayleigh statistics, which scale linearly with scrambling frequency and the sample time. We use this procedure to measure the SOP fluctuations in a short length of coiled fiber subject to mechanical perturbations. 相似文献
3.
Two types of photo heterojunction bipolar transistor (HBT) to directly down-convert optical signals to electronic signals have been reported in the literature: a conventional photo-HBT in which light penetrates through the area of the base-collector junction and an HBT where light shines through the base-collector edge for higher conversion efficiency. Although the performance in relation to bias conditions has been published, the detailed analyses for identifying the parameters and bias conditions that provide optimum direct down-conversion have not been examined. This paper provides a full explanation of the operation of the down-conversion for both HBT configurations based on low-frequency analyses. Such information is useful for both understanding the nonlinear mechanisms involved and designing for maximum efficiency. In addition, a new circuit has been developed from the basic HBT down-conversion circuit that provides improved performance. 相似文献
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Chou Y.C. Leung D. Lai R. Grundbacher R. Barsky M. Kan Q. Tsai R. Wojtowicz M. Eng D. Tran L. Block T. Liu P.H. Nishimoto M. Oki A. 《Electron Device Letters, IEEE》2003,24(6):378-380
The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications. 相似文献
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An attempt is made to find out the suitable entrainment and exit boundary conditions in laminar flow situations. Streamfunction vorticity formulation of the Navier–Stokes equations are solved by ADI method. Two‐dimensional laminar plane wall jet flow is used to test different forms of the boundary conditions. Results are compared with the experimental and similarity solution and the proper boundary condition is suggested. The Kind 1 boundary condition is recommended. It consists of zero first derivative condition for velocity variable and for streamfunction equation, mixed derivative at the entrainment and exit boundaries. Copyright © 2005 John Wiley & Sons, Ltd. 相似文献
9.
Demiguel S. Giraudet L. Joulaud L. Decobert J. Blache F. Coupe V. Jorge F. Pagnod-Rossiaux P. Boucherez E. Achouche M. Devaux F. 《Lightwave Technology, Journal of》2002,20(12):2004-2014
The design, fabrication, and performance of double-stage taper photodiodes (DSTPs) are reported. The objective of this work is to develop devices compatible with 40-Gb/s applications. Such devices require high efficiency, ultrawide band, high optical power handling capability, and compatibility with low-cost module fabrication. The integration of mode size converters improves both the coupling efficiency and the responsivity with a large fiber mode diameter. Responsivity of 0.6 A/W and 0.45 A/W are achieved with a 6-/spl mu/m fiber mode diameter and cleaved fiber, respectively, providing relaxed alignment tolerances (/spl plusmn/1.6 /spl mu/m and /spl plusmn/2 /spl mu/m, respectively), compatible with cost-effective packaging techniques. DSTPs also offer a wide bandwidth greater than 40 GHz and transverse-electric/transverse-magnetic polarization dependence lower than 0.2 dB. Furthermore, a DSTP saturation current as high as 11 mA results in optical power handling greater than +10 dBm and a high output voltage of 0.8 V. These capabilities allow the photodiode to drive the decision circuit without the need of a broad-band electrical amplifier. The DSTP devices presented here demonstrate higher responsivities with large fiber mode diameter and better optical power handling capabilities and are compared with classical side-illuminated photodiodes. 相似文献
10.
Presents the Satellite Communications Network Expert (SaNE), a knowledge-based aid designed to provide engineering support for fault diagnosis. The SaNE is composed of two elements: a satcom network model, which simulates the structure and functionality of a system based loosely upon a large military satcom network, and a diagnostic component, which uses knowledge- and model-based reasoning techniques to analyse system anomalies and diagnose possible causes for the alarms such networks generate. The development cycle is described, emphasising lessons learnt during development and testing and the advantages and disadvantages of the techniques applied. The goal of the SaNE project is primarily commercial acceptance rather than innovation. The authors illustrate how novel concepts can be implemented in a practical system without compromising this goal 相似文献