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1.
Jaehoon Lee Seongha Kim Yonghoon Kim Yunje Oh Seongtaek Hwang Jichai Jeong 《Lightwave Technology, Journal of》2003,21(2):521-527
Optically preamplified receiver performance according to the vestigial sideband (VSB) filtering has been numerically investigated for 40-Gb/s optical signals modulated with nonreturn-to-zero, duobinary nonreturn-to-zero (NRZ), return-to-zero (RZ), carrier-suppressed RZ, and duobinary carrier-suppressed RZ formats. The VSB filtering enables the spectral widths of NRZ, duobinary NRZ, and RZ signals to be reduced without severe power penalties at the receiver. On the other hand, carrier-suppressed RZ and duobinary carrier-suppressed RZ signals have no large advantages over VSB filtering because of the characteristics of their signals. Our results suggest that RZ signals are the most suitable modulation format for VSB filtering, without considering the filter loss, because of the tolerance of the intersymbol interference and a large spectral width. However, duobinary NRZ signals are the most suitable modulation format for VSB filtering, considering the filter loss, because of their narrow spectral width. 相似文献
2.
Jeong-Soo Lee Yang-Kyu Choi Daewon Ha Balasubramanian S. Tsu-Jae King Bokor J. 《Electron Device Letters, IEEE》2003,24(3):186-188
The hydrogen annealing process has been used to improve surface roughness of the Si-fin in CMOS FinFETs for the first time. Hydrogen annealing was performed after Si-fin etch and before gate oxidation. As a result, increased saturation current with a lowered threshold voltage and a decreased low-frequency noise level over the entire range of drain current have been attained. The low-frequency noise characteristics indicate that the oxide trap density is reduced by a factor of 3 due to annealing. These results suggest that hydrogen annealing is very effective for improving device performance and for attaining a high-quality surface of the etched Si-fin. 相似文献
3.
Chel-Jong Choi Tae-Yeon Seong Key-Min Lee Joo-Hyoung Lee Young-Jin Park Hi-Deok Lee 《Electron Device Letters, IEEE》2002,23(4):188-190
The leakage mechanism in p+/n shallow junctions fabricated using Co silicidation and shallow trench isolation processes has been investigated using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and TSUPREM-4 simulation results show that dopant profiles bend upward near the edge of the active region. The formation of the abnormal profile is attributed to transient enhanced diffusion induced by source/drain implantation. Based on the TEM and simulation results, it is suggested that the shallower junctions formed near the active edge can serve as a source for leakage current in the silicided p+ /n shallow junctions 相似文献
4.
Antoniades N. Boskovic A. Tomkos I. Madamopoulos N. Lee M. Roudas I. Pastel D. Sharma M. Yadlowsky M.J. 《Selected Areas in Communications, IEEE Journal on》2002,20(1):149-165
This paper demonstrates the use of computer simulation for topological design and performance engineering of transparent wavelength-division multiplexing metropolitan-area networks. Engineering of these networks involves the study of various transport-layer impairments such as amplifier noise, component ripple, chirp/dispersion, optical crosstalk, waveform distortion due to filter concatenation, fiber nonlinearities, and polarization effects. A computer simulation methodology composed of three main simulation steps is derived and implemented. This methodology obtains performance estimations by applying efficient wavelength-domain simulations on the entire network topology, followed by time-/frequency-domain simulations on selected paths of the network and finally Q-budgeting on an identified worst case path. The above technique provides an efficient tool for topological design and network performance engineering. Accurate simulation models are presented for each of the performance impairments, and the computer simulation methodology is used for the design and engineering of a number of actual metro network architectures 相似文献
5.
A 0.9 V 92 dB Double-Sampled Switched-RC Delta-Sigma Audio ADC 总被引:1,自引:0,他引:1
Min Gyu Kim Gil-Cho Ahn Hanumolu P.K. Sang-Hyeon Lee Sang-Ho Kim Seung-Bin You Jae-Whui Kim Temes G.C. Un-Ku Moon 《Solid-State Circuits, IEEE Journal of》2008,43(5):1195-1206
A 0.9 V third-order double-sampled delta-sigma audio ADC is presented. A new method using a combination of a switched-RC technique and a floating switched-capacitor double-sampling configuration enabled low-voltage operation without clock boosting or bootstrapping. A three-level quantizer with simple dynamic element matching was used to improve linearity. The prototype IC implemented in a 0.13 CMOS process achieves 92 dB DR, 91 dB SNR and 89 dB SNDR in a 24 kHz audio signal bandwidth, while consuming 1.5 mW from a 0.9 V supply. The prototype operates from 0.65 V to 1.5 V supply with minimal performance degradation. 相似文献
6.
Jong-Hwan Kim Yeon-Chan Hong Sung-Jun Lee Keh-Kun Choi 《Industrial Electronics, IEEE Transactions on》1989,36(3):361-364
A direct adaptive control scheme is proposed for nonminimum-phase systems in which controller parameters are estimated from the recursive least-squares algorithm and additional auxiliary parameters are obtained from the proposed polynomial identity. A local convergence is guaranteed without any extra condition. Integral action is incorporated into the adaptive controller to eliminate the steady-state error and to satisfy a condition of the unique solution for the polynomial identity. The control law used in this scheme is based on the set-point-on-I-only proportional-integral-derivative (PID) structure 相似文献
7.
Takeshi Kondo Sang Min Lee Michal Malicki Benoit Domercq Seth R. Marder Bernard Kippelen 《Advanced functional materials》2008,18(7):1112-1118
We report on a single‐layer organic memory device made of poly(N‐vinylcarbazole) embedded between an Al electrode and ITO modified with Ag nanodots (Ag‐NDs). Devices exhibit high ON/OFF switching ratios of 104. This level of performance could be achieved by modifying the ITO electrodes with some Ag‐NDs that act as trapping sites, reducing the current in the OFF state. Temperature dependence of the electrical characteristics suggest that the current of the low‐resistance state can be attributed to Schottky charge tunnelling through low‐resistance pathways of Al particles in the polymer layer and that the high‐resistance state can be controlled by charge trapping by the Al particles and Ag‐NDs. 相似文献
8.
Application-level performance is a key to the adoption and success of the CDMA 2000. To predict this performance in advance,
a detailed end-to-end simulation model of a CDMA network is built to include application traffic characteristics, network
architecture, network element details using the proposed simulation methodology. We assess the user-perceived application
performance when a RAN and a CN adopt different transport architectures such as ATM and IP. To evaluate the user-perceived
quality of voice service, we compare the end-to-end packet delay for different vocoder schemes such as G.711, G.726 (PCM),
G.726 (ADPCM), and vocoder bypass scheme. By the simulation results, the vocoder bypass scenario shows 30% performance improvement
over the others. We also compare the quality of voice service with and without DPS scheduling scheme. We know that DPS scheme
keep the voice delay bound even if the service traffic is high. For data packet performance, HTTP v.1.1 shows better performance
than that of HTTP v.1.0 due to the pipelining and TCP persistent connection. We may conclude that IP transport technology
is better solution for higher FER environment since the packet overhead of IP is smaller than that of ATM for web browsing
data traffic, while it shows opposite effect to the small size voice packet in RAN architecture. We show that the 3G-1X EV-DO
system gives much better packet delay performance than 3G-1X RTT. The main conclusion is that end-to-end application-level
performance is affected by various elements and layers of the network and thus it must be considered in all phases of the
development process.
Jae-Hyun Kim He received the B.S., M.S., and Ph.D. degrees, all in computer science and engineering, from Hanyang University, Ansan, Korea,
in 1991, 1993, and 1996 respectively. In 1996, he was with the Communication Research Laboratory, Tokyo, Japan, as a Visiting
Scholar. From April 1997 to October 1998, he was a post-doctoral fellow at the department of electrical engineering, University
of California, Los Angeles. From November 1998 to February 2003, he worked as a member of technical staff in Performance Modeling
and QoS management department, Bell laboratories, Lucent Technologies, Holmdel, NJ. He has been with the department of electrical
engineering, Ajou University, Suwon, Korea, as an assistant professor since 2003. His research interests include QoS issues
and cross layer optimization for high-speed wireless communication. Dr. Kim was the recipient of the LGIC Thesis Prize and
Samsung Human-Tech Thesis Prize in 1993 and 1997, respectively. He is a member of the Korean Institute of Communication Sciences
(KICS), Korea Institute of Telematics and Electronis (KITE), Korea Information Science Society (KISS), and IEEE.
Hyun-Jin Lee received the B.S. degree in electrical engineering from Ajou University, Suwon, Korea, in 2004, and is working toward the
M.S. degree and Ph. D. degree in electrical engineering at Ajou University. He has been awarded Samsung Human-Tech Thesis
Prize in 2004. His research interests QoS, especially network optimization and wireless packet scheduling. He is a member
of the KICS.
Sung-Min Oh received the B.S. and M. S. degrees in electrical engineering form Ajou University, Suwon, Korea, in 2004, and is working
toward the Ph. D. degree in electrical engineering at Ajou University. His research interests QoS performance analysis and
4G network. He is a member of the KICS.
Sung-Hyun Cho received his B.S., M.S., and Ph.D. in computer science and engineering from Hanyang University, Korea, in 1995, 1997, and
2001, respectively. From 2001 to 2005, he has been with Samsung Advanced Institute of Technology, where he has been engaged
in the design and standardization of MAC and upper layers of B3G, IEEE 802.16e, and WiBro systems. He is currently a MAC part
leader in the telecommunication R&D center of Samsung Electronics. His research interests include 4G air interface design,
radio resource management, cross layer design, and handoff in wireless systems. 相似文献
9.
Sungyong Kim Lingxin Chen Sangyeop Lee Gi Hun Seong Jaebum Choo Eun Kyu Lee Chil-Hwan Oh Sanghoon Lee 《Analytical sciences》2007,23(4):401-405
A rapid DNA analysis has been developed based on a fluorescence intensity change of a molecular beacon in a PDMS microfluidic channel. Recently, we reported a new analytical method of DNA hybridization involving a PDMS microfluidic sensor using fluorescence energy transfer (FRET). However, there are some limitations in its application to real DNA samples because the target DNA must be labelled with a suitable fluorescent dye. To resolve this problem, we have developed a new DNA microfluidic sensor using a molecular beacon. By monitoring the change in the restored fluorescence intensity along the channel length, it is possible to rapidly detect any hybridization of the molecular beacon to the target DNA. In this case, the target DNA does not need to be labelled. Our experimental results demonstrate that this microfluidic sensor using a molecular beacon is a promising diagnostic tool for rapid DNA hybridization analysis. 相似文献
10.
A model is developed for the analysis of factors influencing organizational and technological changes associated with CAD and CAD/CAM (computer-aided design/computer-aided manufacture). Different pressures for adoption and the sociopolitical environment of the organization and related to managerial strategies and their impact on skills, tasks, training, and changes in work organization. Opportunities are illustrated through the experiences of seven British engineering companies implementing the technologies. Six of the companies are in manufacturing and one is an engineering services organization. Four of the companies are of small to medium size (under 500 employees) and the other three are large, multisite organizations. Key elements of the technological change are identified, and the position of the seven companies in relation to these elements is summarized and discussed 相似文献