High speed p-type SiGe modulation-doped field-effect transistors

We report on the fabrication and characterization of high-speed p-type modulation-doped field-effect transistors (MODFETs) with 0.7-μm and 1-μm gate-lengths having unity current-gain cut-off frequencies (f_T) of 9.5 GHz and 5.3 GHz, respectively. The devices were fabricated on a high hole mobility SiGe heterostructure grown by ultra-high-vacuum chemical vapor deposition (UHV-CVD). The dc maximum extrinsic transconductance (g_m) is 105 mS/mm (205 mS/mm) at room temperature (77 K) for the 0.7-μm gate length devices. The fabricated devices show good pinch-off characteristics and have a very low gate leakage current of a few μA/mm at room temperature and a few nA/mm at 77 K     

High performance analog VLSI computational circuits

Simple linear voltage/current-controlled voltage-to-current (V-T) converters, which are to first-order insensitive to the threshold voltage variation, are introduced. The circuits can be used as basic building blocks to construct simple analog computational circuits, which can perform functions such as square rooting, squaring, multiplication, sum of squares, difference of squares, etc. Some of the key features are: good linearity, floating inputs [high common-mode rejection ratio (CMRR)], simplicity, and good transconductance tuning range. The circuits can be realized with CMOS devices in saturation, however, BiCMOS devices extend their speed and input voltage range. Realistic simulations and experimental results clearly demonstrate the claims     

Application of N,N‐bis(diphenylphosphino)aniline palladium(II) complexes as pre‐catalysts in Heck coupling reactions

Palladium(II) complexes with N,N‐bis(diphenylphosphino)aniline ligands catalyse the Heck reaction between styrene and aryl bromides, affording stilbenes in good yield. The structures of two of the complexes used as pre‐catalysts have been determined by single‐crystal X‐ray diffraction. Copyright © 2007 John Wiley & Sons, Ltd.     

Statistical modeling of device mismatch for analog MOS integratedcircuits

A generalized parameter-level statistical model, called statistical MOS (SMOS), capable of generating statistically significant model decks from intra- and inter-die parameter statistics is described. Calculated model decks preserve the inherent correlations between model parameters while accounting for the dependence of parameter variance on device separation distance and device area. Using a Monte Carlo approach to parameter sampling, circuit output means and standard deviations can be simulated. Incorporated in a CAD environment, these modeling algorithms will provide the analog circuit designer with a method to determine the effect of both circuit layout and device sizing on circuit output variance. Test chips have been fabricated from two different fabrication processes to extract statistical information required by the model. Experimental and simulation results for two analog subcircuits are compared to verify the statistical modeling algorithms     

High-transconductance n-type Si/SiGe modulation-doped field-effecttransistors

The authors report on the fabrication and the resultant device characteristics of the first 0.25-μm gate-length field-effect transistor based on n-type modulation-doped Si/SiGe. Prepared using ultrahigh vacuum/chemical vapor deposition (UHV/CVD), the mobility and electron sheet charge density in the strained Si channel are 1500 (9500) cm²/V-s and 2.5×10¹² (1.5×10¹² ) cm^-2 at 300 K (77 K). At 77 K, the devices have a current and transconductance of 325 mA/mm and 600 mS/mm, respectively. These values far exceed those found in Si MESFETs and are comparable to the best results achieved in GaAs/AlGaAs modulation-doped transistors     

CMOS scaling into the nanometer regime

Starting with a brief review on 0.1-μm (100 nm) CMOS status, this paper addresses the key challenges in further scaling of CMOS technology into the nanometer (sub-100 nm) regime in light of fundamental physical effects and practical considerations. Among the issues discussed are: lithography, power supply and threshold voltage, short-channel effect, gate oxide, high-field effects, dopant number fluctuations and interconnect delays. The last part of the paper discusses several alternative or unconventional device structures, including silicon-on-insulator (SOI), SiGe MOSFET's, low-temperature CMOS, and double-gate MOSFET's, which may lead to the outermost limits of silicon scaling     

Über Halogenphenylester der Phosphorsäure

A simple method for preparing halogenphenylesters of phosphoric, phenylphosphonic and phosphorous acid from the respective acid chlorides and phenols in the presence of various nitrogen-containing catalysts is described. Contrary to other methods, these reactions give high yields, despite of steric hindrance.     

Azides in the Synthesis of Various Heterocycles

In this review, we focus on some interesting and recent examples of various applications of organic azides such as their intermolecular or intramolecular, under thermal, catalyzed, or noncatalyzed reaction conditions. The aforementioned reactions in the aim to prepare basic five-, six-, organometallic heterocyclic-membered systems and/or their fused analogs. This review article also provides a report on the developed methods describing the synthesis of various heterocycles from organic azides, especially those reported in recent papers (till 2020). At the outset, this review groups the synthetic methods of organic azides into different categories. Secondly, the review deals with the functionality of the azido group in chemical reactions. This is followed by a major section on the following: (1) the synthetic tools of various heterocycles from the corresponding organic azides by one-pot domino reaction; (2) the utility of the chosen catalysts in the chemoselectivity favoring C−H and C-N bonds; (3) one-pot procedures (i.e., Ugi four-component reaction); (4) nucleophilic addition, such as Aza-Michael addition; (5) cycloaddition reactions, such as [3+2] cycloaddition; (6) mixed addition/cyclization/oxygen; and (7) insertion reaction of C-H amination. The review also includes the synthetic procedures of fused heterocycles, such as quinazoline derivatives and organometal heterocycles (i.e., phosphorus-, boron- and aluminum-containing heterocycles). Due to many references that have dealt with the reactions of azides in heterocyclic synthesis (currently more than 32,000), we selected according to generality and timeliness. This is considered a recent review that focuses on selected interesting examples of various heterocycles from the mechanistic aspects of organic azides.     

Theragnostic Applications of Mammal and Plant-Derived Extracellular Vesicles: Latest Findings,Current Technologies,and Prospects

The way cells communicate is not fully understood. However, it is well-known that extracellular vesicles (EVs) are involved. Researchers initially thought that EVs were used by cells to remove cellular waste. It is now clear that EVs function as signaling molecules released by cells to communicate with one another, carrying a cargo representing the mother cell. Furthermore, these EVs can be found in all biological fluids, making them the perfect non-invasive diagnostic tool, as their cargo causes functional changes in the cells upon receiving, unlike synthetic drug carriers. EVs last longer in circulation and instigate minor immune responses, making them the perfect drug carrier. This review sheds light on the latest development in EVs isolation, characterization and, application as therapeutic cargo, novel drug loading techniques, and diagnostic tools. We also address the advancement in plant-derived EVs, their characteristics, and applications; since plant-derived EVs only recently gained focus, we listed the latest findings. Although there is much more to learn about, EV is a wide field of research; what scientists have discovered so far is fascinating. This paper is suitable for those new to the field seeking to understand EVs and those already familiar with it but wanting to review the latest findings.