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Filali W. Garoudja E. Oussalah S. Mekheldi M. Sengouga N. Henini M. 《Russian Microelectronics》2019,48(6):428-434
Russian Microelectronics - We report the capacitance-voltage (C–V) characteristics of multi quantum wells Schottky diode. This diode is based on Aluminum gallium arsenide, which is highly... 相似文献
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