Analysis method of the angiotensin-I converting enzyme inhibitory activity based on micellar electrokinetic chromatography.

A micellar electrokinetic chromatography (MEKC) method was developed for estimating the angiotensin-I converting enzyme (ACE) inhibitory activity by separating the hippuric acid liberated in the ACE reaction mixture in the presence of an inhibitor, captopril. The hippuric acid was successfully separated and detected by MEKC with a 25 mM sodium dodecyl sulfate solution in a 25 mM phosphate-50 mM borate buffer at pH 7.0; the total analysis took about 5 min. A good linear relationship was observed between the inhibitor and the peak area of hippuric acid release. No significant difference in the ACE inhibitory activity (IC50) of captopril (an antihypertensive medicine) or autolyzed-mushrooms (functional foods) was observed between the conventional method and the MEKC method. The MEKC method was found to be a useful technique for a rapid assay of the ACE inhibitory activity.     

Long Duration Persistent Photocurrent in 3 nm Thin Doped Indium Oxide for Integrated Light Sensing and In-Sensor Neuromorphic Computation

Miniaturization and energy consumption by computational systems remain major challenges to address. Optoelectronics based synaptic and light sensing provide an exciting platform for neuromorphic processing and vision applications offering several advantages. It is highly desirable to achieve single-element image sensors that allow reception of information and execution of in-memory computing processes while maintaining memory for much longer durations without the need for frequent electrical or optical rehearsals. In this work, ultra-thin (<3 nm) doped indium oxide (In₂O₃) layers are engineered to demonstrate a monolithic two-terminal ultraviolet (UV) sensing and processing system with long optical state retention operating at 50 mV. This endows features of several conductance states within the persistent photocurrent window that are harnessed to show learning capabilities and significantly reduce the number of rehearsals. The atomically thin sheets are implemented as a focal plane array (FPA) for UV spectrum based proof-of-concept vision system capable of pattern recognition and memorization required for imaging and detection applications. This integrated light sensing and memory system is deployed to illustrate capabilities for real-time, in-sensor memorization, and recognition tasks. This study provides an important template to engineer miniaturized and low operating voltage neuromorphic platforms across the light spectrum based on application demand.     

Coprocessor design for multilayer surface-mounted PCB routing

The authors present the issues involved in the design of a special-purpose processing array system, called HAM, which accelerates computationally intensive wire routing tasks. It is especially suited for double-sided surface-mounted boards, which require complex three-dimensional search operations over multiple wiring planes. The novel features of the design include a hexagonal interconnection scheme to improve workload distributions during multilayer concurrent search operations and the VLSI custom design of the processors. Particular emphasis has been placed on the demands of maze routing. A cell-address propagation scheme, which is quite different from the traditional grid-coordinate approach, is discussed. It provides rapid lookup of pertinent routing information and can be extended to any distributed memory multiprocessor system. A global pipelining scheme of cell updates and expands is discussed. Experimental results are presented relating the speedup to various criteria for two different modes of parallel wave propagation     

Compact multiple-valued multiplexers using negative differentialresistance devices

Quantum electronic devices with negative differential resistance (NDR) characteristics have been used to design compact multiplexers. These multiplexers may be used either as analog multiplexers where the signal on a single select line selects one out of four analog inputs, or as four-valued logic multiplexers where the select line and the input lines represent one of four quantized signal values and the output line corresponds to the selected input. Any four-valued logic function can be implemented using only four-valued multiplexers (also known as T-gates), and this T-gate uses just 13 devices (transistors) as compared to 44 devices in CMOS. The design of the T-gate was done using a combination of resonant tunneling diodes (RTD's) and heterojunction bipolar transistors (HBT's) with the folded I-V characteristic (NDR characteristic) of the RTD's providing the compact logic implementation and the HBT's providing the gain and isolation. The application of the same design principles to the design of T-gates using other NDR devices such as resonant tunneling hot electron transistors (RHET's) and resonant tunneling bipolar transistors (RTBT's) is also demonstrated     

Raman imaging and stress quantification in self‐assembled graphene oxide fiber ‘Latin Letters’

To probe the intrinsic stress distribution in terms of spatial Raman shift (ω) and change in the phonon linewidth (Γ), here we analyze self‐assembled graphene oxide fibers (GOF) ‘Latin letters’ by confocal Raman spectroscopy. The self‐assembly of GOF ‘Latin letters’ has been explained through surface tension, π–π stacking, van der Waals interaction at the air–water interface and by systematic time‐dependent investigation using field emission scanning electron microscopy analysis. Intrinsic residual stress due to structural joints and bending is playing a distinct role affecting the E_2g mode (G band) at and away from the physical interface of GOF segments with broadening of phonon linewidth, indicating prominent phonon softening. Linescan across an interface of the GOF ‘letters’ reveals Raman shift to lower wavenumber in all cases but more so in ‘Z’ fiber exhibiting a broader region. Furthermore, intrinsic stress homogeneity is observed for ‘G’ fiber distributed throughout its curvature with negligible shift corresponding to E_2g mode vibration. This article demonstrates the significance of morphology in stress distribution across the self‐assembled and ‘smart‐integrable’ GOF ‘Latin letters’. Copyright © 2016 John Wiley & Sons, Ltd.     

Influence of Cu electroplating solutions on boron carbon nitride (BCN) film

Cu electroplating is required for the fabrication of Cu/low-k interconnections. The permeation of a plating solution into low-k films during Cu electroplating is a serious challenge for 45-nm nodes and more complex devices. We investigated the influence of Cu electroplating solutions on boron carbon nitride (BCN) as a low-k film. After dipping it into a Cu electroplating solution that contained additives, the BCN film's hydrophilic surface changed to a hydrophobic surface, and the incorporation of water into the BCN film was suppressed by surfactant adsorption. Sulfuric residue was detected on the BCN sample by thermal desorption spectroscopy after treatment in the Cu electroplating solution with additives; however, it was found through electrical measurements that this solution did not affect the leakage current or the dielectric constant of the BCN film. We successfully fabricated an electroplating Cu layer on a BCN film with good adhesion, and we believe that this BCN film is a sufficiently useful material for Cu/BCN integration in LSI.     

Buckling-driven morphological transformation of droplets of a mixed colloidal suspension during evaporation-induced self-assembly by spray drying

Morphological transformation during evaporation-induced self-assembly of a mixed colloidal suspension in micrometric droplets has been investigated. It has been demonstrated that a buckling-driven shape transition of drying droplets of mixed colloidal suspension takes place during evaporation-induced self-assembly. Further, it is also shown that the distortion modulations get significantly amplified with enhancement in volume fraction of anisotropic soft colloidal component of the mixed colloids. It has been argued that the reduction in elastic modulus of formed shell, at the boundary of a drying droplet, and the anisotropic nature of one of the colloidal components facilitate the deformation process. Hierarchical structures of these assembled colloidal grains have been probed using electron microscopy and scattering techniques.     

SANS investigation on evolution of pore morphology for varying sintering time in porous ceria

Precipitates of ceria were synthesized by homogeneous precipitation method using cerium nitrate and hexamethylenetetramine at 80°C. The precipitates were ground to fine particles of average size ∼0.7 μm. Circular disks with 10 mm diameter, 2 and 3 mm thickness were prepared from the green compacts by sintering at 1300° C for three different sintering times. Evolution of the pore structures in these specimens with sintering time was investigated by small-angle neutron scattering (SANS). The results show that the peak of the pore size distribution shifts towards the larger size with increasing sintering time although the extent of porosity decreases. This indicates that finer pores are eliminated from the system at a faster rate than the coarser ones as sintering proceeds and some of the finer pores coalesce to form bigger ones.     

Oxide thickness dependence of nitridation effects on TDDB characteristics

Wet oxide thicknesses dependence of nitridation effects on electrical characteristics, charge trapping properties and TDDB (Time Dependent Dielectric Breakdown) characteristics have been investigated. It is found that the difference of conduction current between the wet and nitrided wet oxide increases with increasing oxide thickness both for negative and positive bias to the gate until constant current stress is applied. After the stress, with decreasing oxide thickness both in wet and nitrided wet oxide leakage current increases. Up to 60 Å no difference was observed between the wet and nitrided wet oxide but at 50 Å nitrided wet oxide has less increase of current comparing to the wet oxide for the same stress. In wet oxide with increasing stress current density initial hole trap decreases but electron trap increases whereas in nitrided wet oxide has less initial hole trap and also electron trap is less comparing to the wet oxide. Both in wet and nitrided wet oxide for negative bias stress, time to 50 % breakdown decreases with decreasing thickness but at 50 Å a turn-around effect was observed due to nitridation i.e., the 50 % breakdown time is greater for nitrided wet oxide comparing to the wet oxide. On the contrary, for positive bias stress 50 % breakdown time increases with decreasing oxide thickness both in wet and nitrided wet oxide. For positive bias also a turn-around effect is observed at 50 Å i.e., 50% breakdown time is less in nitrided wet oxide comparing to the wet oxide. The improved reliability of nitrided wet oxide at the thin region of 50 Å seems to be due to the increase of more Si---N bond to the interface of oxide and Si comparing to the thick oxide of above 60 Å for the same nitridation conditions.     

Circuit behavior modeling and compact testing performanceevaluation

A realistic modeling of circuit output error patterns with random test inputs is suggested. The model can be used as the basis for accurate evaluation of the probability of aliasing in compact testing. For several example compression techniques, the following aspects are investigated: identification of the error patterns that cause aliasing; asymptotic effectiveness analysis; and comparative simulation study with a limited number of random test vectors applied