A posteriori error analysis of a quadratic finite volume method for nonlinear elliptic problems

In this article, we construct and analyze a residual-based a posteriori error estimator for a quadratic finite volume method (FVM) for solving nonlinear elliptic partial differential equations with homogeneous Dirichlet boundary conditions. We shall prove that the a posteriori error estimator yields the global upper and local lower bounds for the norm error of the FVM. So that the a posteriori error estimator is equivalent to the true error in a certain sense. Numerical experiments are performed to illustrate the theoretical results.     

Optimum Design for RF Windows in Millimeter Wave High Power Tubes

The pill-box and block RF windows for millimeter wave (MMW) tubes are presented. The pill-box window is suitable for broadband MMW tubes. And the block window can be used for high power tubes in short MMW. The equivalent circuits for two windows are given. To reach better match characteristics in wider operating bandwidth, the optimum design methods for pill-box and block window in MMW tubes are described in this paper. The testing results show that the theoretic computation is fast and useful accuracy. The design methods possess references value to designer for MMW tubes.     

撞车

洛杉矶夜晚在公路上发生的一起 轻微的多车追尾事故,将数个毫 不相关的男男女女联系到了一起, 其中包括:政治前途远大的州议 员夫妇、受到无理警察纠缠只得忍气吞声的黑人 导演夫妇、两个无厘头式的黑人抢劫者、种族歧 视极深的白人警察、脾气不好的波斯杂货商、韩     

A new detection algorithm (NDA) based on fuzzy cellular neural networks for white blood cell detection.

White blood cell detection is one of the most basic and key steps in the automatic recognition system of white blood cells in microscopic blood images. Its accuracy and stability greatly affect the operating speed and recognition accuracy of the whole system. But there are only a few methods available for cell detection or segmentation due to the complexity of the microscopic images. This paper focuses on this issue. Based on the detailed analysis of the existing two methods--threshold segmentation followed by mathematical morphology (TSMM), and the fuzzy logic method--a new detection algorithm (NDA) based on fuzzy cellular neural networks is proposed. NDA combines the advantages of TSMM and the fuzzy logic method, and overcomes their drawbacks. With NDA, we can detect almost all white blood cells, and the contour of each detected cell is nearly complete. Its adaptability is strong and the running speed is expected to be comparatively high due to the easy hardware implementation of FCN. Experimental results show good performance.     

A new Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor

A new and interesting Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations has been measured at various temperatures. Based on the large Schottky barrier height and presence of oxide layer, the studied device exhibits a high hydrogen detection sensitivity and wide temperature operating regime. The studied device exhibits the low-leakage current and obvious current changes when exposed to hydrogen-contained gas. Even at room temperature, a very high hydrogen detection sensitivity of 155.9 is obtained when a 9090 ppm H/sub 2//air gas is introduced. Furthermore, when exposed to hydrogen-contained gas at 95/spl deg/C, both the forward and reverse currents are substantially increased with increased hydrogen concentration. In other words, the studied device can be used as a hydrogen sensor under the applied bidirectional bias. Under the applied voltage of 0.35 V and 9090 ppm H/sub 2//air hydrogen ambient, a fast adsorption response time about 10 s is found. The transient and steady-state characteristics of hydrogen adsorption are also investigated.     

ASON实际组网中架构及演进方式分析

对在实际组网中选择合理的ASON架构和保护方式作了相应分析，并为搭建可向ASON平滑演进的传统网络时需注意的问题提供了参考意见，     

A novel InP/InGaAs TEBT for ultralow current operations

A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10/sup -12/ to 10/sup -1/A). A current gain of 3 is obtained even if the device is operated at an ultralow collector current of 3.9 /spl times/ 10/sup -12/A (1.56 /spl times/ 10/sup -7/A/cm/sup 2/). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications.     

Hf-doped and NH/sub 3/-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift

A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V.     

Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.