Switched-Current Filters Revisited: Square-Root Domain Sampled-Data Filters

In this brief, the well-known switched-current (SI) filtering technique is revisited using the concept of the square-root domain (SRD) filtering. It is proved that SI filters are a subclass of the SRD filters, where sampled-data signal processing is performed. This is achieved by considering typical lossless and lossy SRD sampled-data integrator configurations, using a set of complementary SRD operators which are based on the quadratic I-V relationship of MOS transistor operated in the saturation. Circuit examples are given, where linear-domain integrator and third-order filter configurations were derived using appropriate SRD sampled-data building blocks     

High-performance MIM capacitor using ALD high-k HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectrics

For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz up to 20 GHz, very low leakage current of 3.2 /spl times/ 10/sup -8/ A/cm/sup 2/ at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V/sup 2/, temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.     

Analysis of feedback for higher order polarization-mode dispersion mitigation of NRZ 40-Gb/s optical transmission

First-order polarization-mode dispersion (PMD) compensation by means of a polarization controller and a differential delay line is not sufficient to guarantee error-free transmission for 40-Gb/s channels when higher order effects severely increase signal distortion. Higher order mitigation is possible by cascading more than one first-order block. However, only two-stage or three-stage devices remain simple enough to be actually controlled. The performance of such higher order PMD compensators is evaluated by means of numerical simulations. Two different feedback signals have been used, demonstrating that first-order and higher order PMD distortion of nonreturn-to-zero (NRZ) pulses at 40 Gb/s can be strongly mitigated for instantaneous values of the differential group delay (DGD) up to the bit slot, when the compensator is properly controlled.     

Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.     

All-optical seed pulse extraction for packet synchronization based on self-induced effects in a vertical-cavity semiconductor gate

Self-induced effects in a passive polarization-independent vertical-cavity semiconductor gate are investigated numerically and experimentally. We demonstrate all-optical seed-pulse extraction for synchronization of differential phase-shift keying and ON-OFF keying packets at 10 Gb/s. Our results provide evidence that vertical-cavity gates, exploiting saturable absorption in semiconductor quantum-wells, exhibit attractive performances in terms of efficiency, power consumption, and polarization independency.     

The colored revolution of bioimaging

This paper provides an overview of the main aspects of modern fluorescence microscopy. It covers the principles of fluorescence and highlights the key discoveries in the history of fluorescence microscopy. The paper also discusses the optics of fluorescence microscopes and examines the various types of detectors. It also discusses the signal and image processing challenges in fluorescence microscopy and highlights some of the present developments and future trends in the field.     

Smooth profile generation for a tile printing machine

In this paper a digital filter is proposed for the generation of smooth set points for motion control systems. The proposed nonlinear filter produces profiles with bounded velocity and acceleration starting from rough reference signals (steps and ramps). An actual implementation of the filter for a tile printing machine is presented and experimental results are reported.     

High-frequency analysis of the Ellipticus antenna

Efficient numerical solution techniques have been developed and used to examine the electromagnetic fields that can be developed in the working volume of the CW Ellipticus antenna operated at frequencies from 100 kHz to 1 GHz. An exponentially tapered transition section is designed to obtain the desired illumination pattern in the working volume. The input transition section is needed for impedance matching and to drive efficiently the Ellipticus antenna. A parametric study is performed to ascertain the performance of the Ellipticus antenna for frequencies up to 1 GHz