Electrical properties of N2O/NH3 plasma grownoxynitride on strained-Si

Growth of ultrathin (<100 Å) oxynitride on strained-Si using microwave N₂O and NH₃ plasma is reported. X-ray photoelectron spectroscopy (XPS) results indicate a nitrogen-rich layer at the strained-Si/SiO₂ interface. The electrical properties of oxynitrides have been characterized using a metal-insulator-semiconductor (MIS) structure. A moderately low value of insulator charge density (6.1×10¹⁰ cm^-2) has been obtained for NH₃ plasma treated N₂O oxide sample. Nitrided oxide shows a larger breakdown voltage and an improved charge trapping properties under Fowler-Nordheim (F-N) constant current stress     

High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices

This paper demonstrates gate-all-around (GAA) n- and p-FETs on a silicon-on-insulator with /spl les/ 5-nm-diameter laterally formed Si nanowire channel. Alternating phase shift mask lithography and self-limiting oxidation techniques were utilized to form 140- to 1000-nm-long nanowires, followed by FET fabrication. The devices exhibit excellent electrostatic control, e.g., near ideal subthreshold slope (/spl sim/ 63 mV/dec), low drain-induced barrier lowering (/spl sim/ 10 mV/V), and with I/sub ON//I/sub OFF/ ratio of /spl sim/10/sup 6/. High drive currents of /spl sim/ 1.5 and /spl sim/1.0 mA//spl mu/m were achieved for 180-nm-long nand p-FETs, respectively. It is verified that the threshold voltage of GAA FETs is independent of substrate bias due to the complete electrostatic shielding of the channel body.     

Formulae for determining heterodyne system spurious frequencies that coincide with desired output frequency

In this paper, formulae to determine the lowest order and other higher order spurious frequencies that coincide with desired output signal frequencies of mixers have been derived. The proposed formulae give general expressions that are suitable for any order of heterodyne mixing. The formulae have been verified using a suitable example and compared with the simulation results obtained through the radio frequency simulation software of Advanced Design System. The formulae directly reveal the order of the troublesome spurious frequencies that the designers would encounter in heterodyne systems. In comparison with these direct formulae, the results of existing spurious analysis software are based on the maximum order of simulation carried out. Based on these simulations, the coinciding spurious components have to be manually sorted out. Proposed formulae are quick tools used by the microwave system and circuit designers for choosing and finalizing heterodyne frequencies in their designs without the need for any simulations.     

Electrical properties of SiO2/TiO2 high-k gate dielectric stack

The trapping/detrapping behavior of charge carriers in ultrathin SiO₂/TiO₂ stacked gate dielectric during constant current (CCS) and voltage stressing (CVS) has been investigated. Titanium tetrakis iso-propoxides (TTIP) was used as the organometallic source for the deposition of ultra-thin TiO₂ films at low temperature (<200 °C) on strained-Si/relaxed-Si_0.8Ge_0.2 heterolayers by plasma-enhanced chemical vapor deposition (PECVD) in a microwave (700 W, 2.45 GHz) plasma cavity discharge system at a pressure of 66.67 Pa. Stress-induced leakage current (SILC) through SiO₂/TiO₂ stacked gate dielectric is modeled by taking into account the inelastic trap-assisted tunneling (ITAT) mechanism via traps located below the conduction band of TiO₂ layer. The increase in the gate current density observed during CVS from room temperature up to 125 ^oC has been analyzed and modeled considering both the buildup of charges in the layer as well as the SILC contribution. Trap generation rate and trap cross-section are extracted. A capture cross-section in the range of 10⁻¹⁹ cm² as compared to 10⁻¹⁶ cm² in SiO₂ has been observed. A temperature-dependent trap generation rate and defects have also been investigated using time-dependent current density variation during CVS. The time dependence of defect density variation is calculated within the dispersive transport model, assuming that these defects are produced during random hopping transport of positively charge species in the insulating high-k stacked layers. SILC generation kinetics, i.e. defect generation probability under different injected fluences for various high-constant stress voltages in both polarities have been studied. An empirical relation between trap generation probability and applied stress voltage for various injected fluences has been developed.     

An estimation of S/N degradation at millimeter waves during rain events

The use of Ka Band (20/30 GHz) for future satellite communications has been addressed. The exploitation of Ka band with a bandwidth of 2500 MHz seems to represent the largest significant achievement in satellite communications potential, so far. The problems associated with the use of this frequency band such as attenuation and receiver noise temperature (floor) variation with rain has been addressed. The receiver noise floor variation with rain has so far been ignored. Therefore, in view of propagation and noise study over this Ka Band, both signal attenuation and receiver noise floor variations with rain rate are estimated using dual frequency radiometers operating at 22.235 and 31.4 GHz over a tropical station, Calcutta, India.     

On the study of ion-acoustic solitary waves and double-layers in a drift multicomponent plasma with electron-inertia

Using the pseudopotential method, theoretical investigation has been made on the firstorder Korteweg-deVries ion-acoustic solitons in a multicomponent plasma consisting of warm positive ions, negative ions and isothermal electrons. The effects of electron-inertia and drift motion of the ions on the amplitudes and widths of the solitons have been studied in a plasma having (H⁺, Cl⁻), (H⁺, O⁻), (He⁺, H⁻) and (He⁺, O⁻) ions. Ion-acoustic double-layers have also been investigated for such plasmas. It has been found that drift velocity and electron-inertia have significant contribution on the formation of double-layers in multicomponent plasma     

Effect of electron doping on the magnetic correlations in the bilayered brownmillerite compound Ca(2.5-x)La(x)Sr(0.5)GaMn2O8: a neutron diffraction study

The effect of electron doping on the magnetic properties of the brownmillerite type bilayered compounds has been investigated by neutron powder diffraction in La substituted Ca(2.5-x)La(x)Sr(0.5)GaMn(2)O(8) compounds (x = 0.05 and 0.1), in comparison with the undoped compound (x = 0). In all compounds, a long-range three-dimensional collinear antiferromagnetic (AFM) structure is found below the Néel temperature T(N) of the respective compound, whereas, well above T(N), three-dimensional short-range magnetic ordering is observed. In the intermediate temperature range just above T(N), a strong effect of electron doping (La substitution) on the magnetic correlations has been observed. Here, a short-range AFM correlation with a possible dimensionality of three has been found for substituted compounds (x = 0.05 and 0.1) as compared to the reported two-dimensional long-range AFM ordering in the parent compound. With increasing electron doping, a decrease in T(N) is also observed. The short-range magnetic correlations set in over a large temperature range above T(N). A magnetic phase diagram in the x-T plane is proposed from these results.     

New iron(III) complexes with thiosemicarbazones derived from 5-methyl-3-formylpyrazole

New iron(III) complexes of 5-methyl-3-formylpyrazole thiosemicarbazone (HMPzTS) and 5-methyl-3-formylpyrazole-4-phenylthiosemicarbazone (HMPzPTS), namely [Fe(MPzTS)₂]X and [Fe(MPzPTS)₂]X respectively, where X=Cl, NO₃, SCN and ClO₄, have been synthesised and physico-chemically characterised by magnetic measurements (polycrystalline state), electronic, i.r., e.s.r. and Mössbauer spectra. All are cationic complexes containing two monoprotonic tridentate ligands with NNS donor sites and an anionic counterpart; they behave as 1:1 electrolytes in MeOH/DMF. Coordination to central iron(III) via the pyrazolyl nitrogen (²N), the azomethine nitrogen and the thiolato sulphur atom is confirmed in the complexes from i.r. data. E.s.r. data (RT & LNT) reveal the presence of a spin-paired iron(III) cation with d² _xyd² _yzd¹ _xy configuration. The ⁵⁷Fe Mössbauer spectral data (RT) are commensurate with the presence of two iron(III) spin states, the percentage of each being dependent upon the counterion of the species.