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The epitaxial growths of GaN films and GaN-based LEDs on various patterned sapphire substrates (PSSes) with different values of fill factor (f) and slanted angle (θ) are investigated in detail. The threading dislocation (TD) density is lower in the film grown on the PSS with a smaller fill factor, resulting in a higher internal quantum efficiency (IQE). Also the ability of the LED to withstand the electrostatic discharge (ESD) increases as the fill factor decreases. The illumination output power of the LED is affected by both θ and f. It is found that the illumination output power of the LED grown on the PSS with a lower production of tanθ and f is higher than that with a higher production of tanθ and f. 相似文献
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坦克动力舱体红外辐射特性模拟 总被引:1,自引:0,他引:1
建立了坦克动力舱体的温度场数值计算模型和红外特性计算模型,对坦克动力舱体的红外特性进行了理论计算,得到了辐射强度方向图。动力舱体红外特性的计算结果与试验结果的相对误差小于15.6%,基本满足工程设计的需要。研究结果表明,动力舱顶装甲板是主要辐射源,排气百叶窗和排气管附近顶装甲板是坦克的红外辐射特征明显区域。坦克动力舱体的红外辐射主要集中在8~12μm波段。 相似文献
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The epitaxial growths of GaN films and GaN-based LEDs on various patterned sapphire substrates(PSSes) with different values of fill factor(f) and slanted angle(θ) are investigated in detail.The threading dislocation(TD) density is lower in the film grown on the PSS with a smaller fill factor,resulting in a higher internal quantum efficiency(IQE).Also the ability of the LED to withstand the electrostatic discharge(ESD) increases as the fill factor decreases.The illumination output power of the LED is affected by both θ and f.It is found that the illumination output power of the LED grown on the PSS with a lower production of tan θ and f is higher than that with a higher production of tan θ and f. 相似文献
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