离子交换过程的基础研究(Ⅰ)—M~(Z+)—■—H~+及M~(Z+)—■离子交换

本文用大孔磺酸树脂SA—209(×8)研究了Li~+、Ca~(2+)、Co~(2+)、Tm~(3+)对H~+正、逆离子交换过程以及~(59)Co~(2+)—、~(169)Tm~(3+)—~(170)Tm~(3+)同位素交抉过程。用前报中提出的界面吸附双电层模型及解离机制满意地解释了实验事实。     

结晶化学基础理论在现代X射线单晶结构分析中的一些应用

研究化学物质分子结构的方法很多,而衍射法是其中主要的方法之一,它包括X射线衍射、中子衍射和电子衍射等。由于X射线容易得到,而且成本较低,因此、X射线衍射法是分     

Multiple Scattering Effects of Ag Particles in Random Ag-SiN Film

A layer of 40nm-thick Ag-SiN film with Ag nano-particles embedded and distributed randomly in the SiN thin film were deposited by the method of radiant-frequency magnetron sputtering. Specimens orderly comprising a random Ag-SiN film and an optical phase change recording layer were exposed to a focused laser beam with wavelength of 69Ohm. It is shown that, with a random Ag-SiN layer deposited above the recording layer. Calculation by the finite difference time domain method of a 4Ohm-thick SiN film under a Gaussian beam irradiation has been carried out to simulate the near-field distribution in the film, which showed a huge local near-field intensity enhancement of about 200 times if small Ag particles with diameter of 6 nm were modelled inthe SiN film in the central region of the in cident laser spot.     

安奈特获交换机国际品牌满意度第一

近日,“2003中国IT用户满意度调查”结果发布,安奈特获得“交换机国际品牌用户满意度第     

微机电系统及其应用

1 引言请想像这样的景像，用微小的机器干各种活。有的使汽车运行更加平稳安全，免除交通事故中千万人遇难。有的则以每秒数拍（1015比特）速率处理信息，从全球网站为人们下载影视节目。另一些能以前所未有的灵敏度和精确度进行科学测量。晶片大小的化工厂则能在需要的时间和地点制造危险的材料。这样的景像现已出现：我们正生活于其中，这就是现代的硅微机械世界[1]。这个世界在40多年前就由Richard Feynman以惊人的先见所预言，当时晶体三极管仍是刚发明而未被验证的技术，集成电路则在多年后才出现。在其1959年的讲话“底层仍有许多空…     

分割电极片状压电致动器——(二)位移特性及狭缝宽度对其影响的实验研究

研究了悬臂梁式分割电极片状压电致动器的位移特性。理论分析表明，分割电极狭缝宽度会减小致动器自由端的位移输出，但当狭缝宽度小于致动器电极宽度的１０％时，可忽略狭缝宽度的影响。致动器端部位移的测试结果大于理论计算值。与现有磁头悬浮臂尺寸相近的致动器，在２０Ｖ～５０Ｖ的电压驱动下均可获得１μｍ～２μｍ的致动位移。对９８５０道／厘米的密度磁盘，该位移能覆盖至少一个磁道宽度，满足磁头定位两级伺服系统对第二级致动器位移的基本要求。     

PINNING EFFECT OF LEAD LANTHANUM TITANATE THIN FILMS DEPOSITED ON DIFFERENT SUBSTRATES

Pinning effect of lead lanthanum titanate (PLT) ferroelectric thin films with excess PbO of 20 mol% has been studied for deposition on diffe rent substrates. Silicon, sapphire and quartz were used as substrates on which P t/Ti or LaNiO₃ thin films were deposited as bottom electrodes. Electron probe analysis results showed that there was still a certain amount of excess Pb in PLT films after annealing at 550 ℃ for 1 h, and the amount of it was dependent on the substrate used. The distribution of excess Pb in the films was investig ated by Auger electron spectroscopy depth profile. It was shown that the substrates and the bottom electrodes had significant effects on the content and distrib ution of excess Pb in PLT films. The excess Pb and its accumulation at the inter face between the film and bottom electrode may act as pinning centers and have a pinning effect on domains, which can be observed by abnormal P-E hysteresis loops and abnormal C-V curves. The excess Pb content in the films and the accumulation of Pb at the interface were high in PLT films deposited on Pt/Ti/S i, and considerable pinning effect was observed. As LaNiO₃ would absorb most part of the excess Pb in PLT films, the content of excess Pb in the films deposited on LaNiO₃/Si was very low and the pinning effect was hardly observed.     

半导体和IC

半导体和ＩＣ１４位２ＭＨｚ取样Ａ／Ｄ转换器　　　　　　　查询号２３１Ｄａｔｅｌ公司的ＡＤＳ－９１９是一种高性能１４位２ＭＨｚ取样Ａ／Ｄ转换器，可按照奈奎斯特频率对输入信号进行取样而无遗漏码。ＡＤＳ－９１９具有优异的动态性能，信噪比为７７ｄＢ，总谐波失真为－７４ｄＢ。这种功能完备的ＡＤＳ－９１９采用２４脚ＤＤＩＰ封装，具有快速建立取样保持放大器、Ａ／Ｄ转换器、精密电压基准、定时／控制逻辑和纠锗电路。数字输入和输出电平为ＴＴＬ。ＡＤＳ－９１９采用±１５ｖ（±１２Ｖ）和＋５Ｖ电源，功耗为１．８Ｗ（±１…     

有机磷化合物的质谱研究(Ⅵ)——磷酰二胺酯类化合物的电子轰击质谱和化学电离质谱

本文报道了7种新的N-烷基-N′-乙氧羰基甲基-N′-芳磺酰基-O-乙基磷酰二胺酯化合物的电子轰击质谱(EIMS)和化学电离质谱(CIMS,甲烷为反应气)。结果表明,无论是EIMS,还是CIMS均存在较多的骨架重排离子峰;取代基对谱图有较大的影响;EIMS中P—N键的断裂为重要质谱特征,CIMS中MH~+准分子离子为重要特征离子,还存在分子离子反应的产物。