自旋转矩纳米振荡器的研究进展

自旋转矩纳米振荡器(STNO)是利用自旋极化电流引起多层磁性纳米结构中的自由磁性层的磁矩进动,并结合磁电阻效应而得到微波输出的一种新型微波振荡器,它具有体积小,振荡频率可电流调控,品质因素高和低功耗等优点.本文介绍了STNO的工作原理,综述了STNO的国内外研究现状和发展趋势,并展望其应用前景.     

Temperature dependence of spin pumping in YIG/NiOx/W multilayer

We report the temperature dependence of the spin pumping effect for Y₃Fe₅O₁₂ (YIG, 0.9 μm)/NiO (t_NiO)/W (6 nm) (t_NiO = 0 nm, 1 nm, 2 nm, and 10 nm) heterostructures. All samples exhibit a strong temperature-dependent inverse spin Hall effect (ISHE) signal I_c and sensitivity to the NiO layer thickness. We observe a dramatic decrease of I_c with inserting thin NiO layer between YIG and W layers indicating that the inserting of NiO layer significantly suppresses the spin transport from YIG to W. In contrast to the noticeable enhancement in YIG/NiO (t_NiO ≈ 1-2 nm)/Pt, the suppression of spin transport may be closely related to the specific interface-dependent spin scattering, spin memory loss, and spin conductance at the NiO/W interface. Besides, the I_c of YIG/NiO/W exhibits a maximum near the T_N of the AF NiO layer because the spins are transported dominantly by incoherent thermal magnons.     

"微电子器件"课程探究式小班教学模式

当前,注重对学生的能力与思维培养的探究式小班(seminar)教学模式越来越受重视.本文介绍了我校"微电子器件"课程在探究式小班教学模式的实践中,构建启发式、案例式、讨论式的探究式教学形式的具体措施,最后还介绍了课程考核方式的改革方法.     

Liquid phase epitaxy magnetic garnet films and their applications

Liquid phase epitaxy(LPE) is a mature technology. Early experiments on single magnetic crystal films fabricated by LPE were focused mainly on thick films for microwave and magneto–optical devices. The LPE is an excellent way to make a thick film, low damping magnetic garnet film and high-quality magneto–optical material. Today, the principal challenge in the applied material is to create sub-micrometer devices by using modern photolithography technique. Until now the magnetic garnet films fabricated by LPE still show the best quality even on a nanoscale(about 100 nm), which was considered to be impossible for LPE method.     

GaAs基霍尔传感器的研究进展

霍尔传感器作为磁传感器的重要成员,广泛应用于汽车电子和无线通信等电子系统.与以第一代半导体材料硅、锗等为基底的霍尔传感器相比,GaAs基霍尔传感器具有更高的磁场分辨率、灵敏度和稍好的温度特性.概述了GaAs材料在霍尔传感器领域的优势及霍尔单元形状的研究进展;综述了采用外延工艺制备的单外延结构的GaAs基霍尔传感器和异质结构的GaAs基霍尔传感器的研究进展;详细介绍了电压偏移消除技术的研究进展,包括结构的优化、正交对消补偿和旋转电流技术;最后对GaAs基霍尔传感器的发展趋势进行了展望.     

Flexible tuning microwave permeability spectrum in [ferromagnet/antiferromagnet]_n exchange-biased multilayer stack structure

NiFe/[IrMn/NiFe/IrMn] 5 /[NiFe/IrMn] 4 /NiFe structured exchange-biased multilayer films are designed and prepared by magnetron sputtering. The static and the microwave magnetic properties are systematically investigated. The results reveal that adding a partially pinned ferromagnetic layer can effectively broaden the ferromagnetic resonance linewidth toward the low frequency domain. Moreover, a wideband multi-peak permeability spectrum with a 3.1-GHz linewidth is obtained by overlapping the spectra of different partially pinned ferromagnetic layers and [antiferromagnet/ferromagnet/antiferromagnet] n stacks. Our results show that the linewidth of the sample can be feasibly tuned through controlling the proper exchange bias fields of different stacks. The designed multilayered thin films have potential application for a tunable wideband high frequency noise filter.