灵活扩展的网通宽带接入平台

随着宽带接入技术的逐渐成熟，国内大中城市的商务社区、宽带小区的各种宽带业务正迅速升温(包括近日广为宣传的WLAN应用等)，这给运营企业的宽带接入系统提出了更高的要求。针对“宽带商务”接入平台的建设和运营情况，本刊记走访了中国网通技术与网络规划部高级经理邵宏志先生，他向我们详细介绍了——     

一种不等带宽光学梳状滤波器

提出了一种新型—Michelson—三面镜FabryPerot型50GHz不等带宽光学梳状滤波器设计方案,分析和模拟表明:该器件将一路信道间隔为50GHz的输入信号分离成信道间隔为100GHz的奇偶两路输出信号,其中在3dB处,奇数信道带宽大于30GHz用于10Gb/s传输,偶数信道带宽大于60GHz用于40Gb/s传输对于将来的40Gb/s系统,该器件具有优势.     

半导体激光自混频干涉式传感器中的干涉与调制

应用F-P模型，阐述了半导体激光自混频干涉式传感器的干涉与调制过程，同时给出了相应的计算．     

Harmonic beam splitter design and fabrication

Two problems of half-wave hole and high ripples in the transmittance region for a harmonic beam splitter had been pointed out and analyzed. Based on the application of a half-wavelength control and a new admittance matching methods, a harmonic beam splitter was designed and fabricated. The former method eliminated the half-wave hole fundamentally, and the latter smoothed high ripples in the transmittance region effectively. The matching stack consisted of a symmetrically periodic structure and provided a complete matching at the desired wavelength, i.e., both conditions for the equivalent admittance and phase thickness were fulfilled. Furthermore, both the theoretical and the tested curves had been given, and a good agreement between them was obtained.     

六大手段并行 手机银行国外发展领先一步

金融市场的逐步开放和移动通信产业的不断壮大，呼唤安全、可靠、便捷、灵活的支付手段，以保障移动商务的顺利进行。     

离子束辅助沉积制备高功率激光薄膜的研究

综述了离子束辅助沉积技术在高功率激光薄膜制备中的应用研究进展.指出该技术在制备高激光损伤阈值的薄膜中存在的问题,即出现过高的堆积密度,会给薄膜带来杂质缺陷、化学计量比缺陷、损伤缺陷、晶界缺陷,制备薄膜的残余应力存在着压应力增加的趋势,会改变薄膜的晶体结构等.并指出了该研究领域的研究方向.     

Structure and Photoluminescence of Nano-ZnO Films Grown on a Si （100） Substrate by Oxygen- and Argon-Plasma-Assisted Thermal Evaporation of Metallic Zn

Nano-ZnO thin films were prepared by oxygen- and argon-plasma-assisted thermal evaporation of metallic Zn at low temperature, followed by low-temperature annealing at 300℃ to 500℃ in oxygen ambient. X-ray diffraction patterns indicate that the nano-ZnO films have a polycrystalline hexagonal wurtzite structure. Raman scattering spectra demonstrate the existence of interface layers between Zn and ZnO. Upon annealing at 400℃ for i h, the interface mode disappears, and photoluminescence spectra show a very strong ultraviolet emission peak around 381 nm. The temperature-dependent PL spectra indicate that the UV band is due to free-exciton emission.     

薄Si膜对基底表面粗糙度的影响

利用ＺＹＧＯ光学干涉测量仪，散射积分测量法观测了光学元件表面均方根粗糙度．详细分析了薄Ｓｉ膜对基底均方根粗糙度的影响，由此认为薄膜并不总是复制基底表面的粗糙度，结果出现了薄膜降低表面粗糙度的现象．提出了一定厚度范围的薄Ｓｉ膜的表面粗糙度存在着一个稳定值的新设想．