Ⅲ - Ⅴ/Si混合集成激光器研究进展

硅基光互连技术是解决目前电互连制约瓶颈的有效手段,而实用化集成光源的制备对硅基芯片功耗的降低和尺寸的减小有着十分重要的意义。硅基集成激光器在过去的十多年间取得了一系列重要突破,其中III-V/Si混合集成激光器是近期最可能获得实际应用的方案之一。文章简要分析了硅基集成激光器的研究现状,重点介绍了III-V/Si混合集成激光器的研究进展,包括III-V/Si键合激光器和III-V/Si倒装焊激光器的发展和各自存在的问题,并预测了硅基集成激光器的发展方向。     

Wafer-Level Testable High-Speed Silicon Microring Modulator Integrated with Grating Couplers

A wafer-level testable silicon-on-insulator-based microring modulator is demonstrated with high modulation speed, to which the grating couplers are integrated as the fiber-to-chip interfaces. Cost-efflcient fabrications are realized with the help of optical structure and etching depth designs. Grating couplers and waveguides are patterned and etched together with the same slab thickness. Finally we obtain a 3-dB coupling bandwidth of about 6Ohm and 10 Gb/s nonreturn-to-zero modulation by wafer-level optical and electrical measurements.     

光电对抗仿真系统研究

介绍了光电对抗在信息化战争中的地位与作用,阐述了光电对抗仿真系统研究的必要性,针对国内外光电对抗仿真的研究现状,给出了光电对抗仿真系统的总体框架,研究了光电对抗仿真需解决的关键技术和需要完成的主要工作,最后对我国光电对抗仿真系统的研究进行了总结。     

平顶高斯光束通过硬边光阑传输算法的改进

用傅里叶级数和复高斯函数的乘积对硬边光阑的窗口函数进一步拟合,对平顶高斯光束通过硬边光阑光学系统的模拟算法作了改进,并给出了近似解析传输公式.对直接积分Collins公式和使用Wen方法的数值计算结果作了比较.研究表明,只要傅里叶级数项数不少于30,改进后的算法比直接用复高斯函数展开具有更高的计算精度.     

Sub-nanosecond silicon-on-insulator optical micro-ring switch with low crosstalk

<正>We demonstrate a sub-nanosecond electro-optical switch with low crosstalk in a silicon-on-insulator(SOI) dual-coupled micro-ring embedded with p-i-n diodes.A crosstalk of -23 dB is obtained in the 20-μm-radius micro-ring with the well-designing asymmetric dual-coupling structure.By optimizations of the doping profiles and the fabrication processes,the sub-nanosecond switch-on/off time of400 ps is finally realized under an electrical pre-emphasized driving signal.This compact and fast-response micro-ring switch,which can be fabricated by complementary metal oxide semiconductor(CMOS) compatible technologies,have enormous potential in optical interconnects of multicore networks-on-chip.     

硬边衍射光束的计算模拟

在激光的产生和传输过程中或多或少地要受到光阑的限制。因此,光束通过有硬边光阑限制光学系统传输问题的研究有重要实际意义。为此,已发展了多种模拟方法。一般情况下,对Collins公式直接数值积分是一种精确的模拟方法。但当光阑数增加时,计算变得非常繁琐和费时。使用四种简明方法,即解析公式法、递推算法、复高斯函数展开法和矩阵表示法来模拟硬边衍射光束,对这些方法的优点和使用范围作了分析．讨论了方法的改进。     

光场的非傍轴性对光谱移动和光谱开关的影响

利用瑞利衍射积分公式，推导出多色高斯光束被硬边光阑衍射后光谱的解析公式，傍轴近似的光谱公式可作为特例得到.着重研究了束腰宽度与中心波长之比w₀/λ₀和截断参数δ对光谱移动和光谱开关的影响.结果表明，只有当w₀/λ₀和δ满足一定条件时，傍轴近似结果才与非傍轴结果一致.光场的非傍轴性会引起光谱移动不同和产生光谱开关的临界位置变化. 关键词： 非傍轴光场 高斯光束 光谱移动 光谱开关     

High-speed and broad optical bandwidth silicon modulator

A high-speed silicon modulator with broad optical bandwidth is proposed based on a symmetrically configured Mach–Zehnder interferometer.Careful phase bias control and traveling-wave design are used to improve the high-speed performance.Over a broadband wavelength range,high-speed operation up to 30 Gbit/s with a 4.5 dB–5.5 dB extinction ratio is experimentally demonstrated with a low driving voltage of 3 V.     

Effect of astigmatism on spectral switches of partially coherent beams

A detailed study of the spectrum of partially coherent beams diffracted at an astigmatic aperture lens is performed. Considerable attention is paid to the effect of astigmatism on spectral switches of polychromatic Gaussian Schell-model beams. It is shown that the spectral switch can also take place in the vicinity of intensity minimum in a geometrical focal plane for the astigmatic case, but the astigmatism of the lens and the spatial correlation of the beam affect the critical position u_c, spectral minimum S_{min}, and transition height Δ of spectral switches.     

A large bandwidth photonic delay line using passive cascaded silicon-on-insulator microring resonators

This paper investigated the design and the characterization of a photonic delay line based on passive cascaded silicon-on-insulator (SOI) microrings.We considered the compromise of group delay,bandwidth and insertion loss.A 3-stage double channel side-coupled integrated spaced sequence of resonator (SCISSOR) device was optimized by shifting the resonance of each microring and fabricated with electron beam lithography and dry etching.The group delay was measured to be 17 ps for non-return-to-zero signals at different bit rates and the bandwidth of 78 GHz was achieved.The experiment result agreed well with our simulation.