电磁隔离耦合式合成场天线

本文简单扼要介绍了中波小天线的研制工作情况,重点介绍了实验成果及电磁隔离耦合式合成场天线的创新点.     

Interstitial vortex in superconducting film with periodic hole arrays

The response of superconducting Nb films with a diluted triangular and square array of holes to a perpendicular magnetic field are investigated.Due to small edge-to-edge separation of the holes,the patterned films are similar to multi-connected superconducting islands.Two regions in the magnetoresistance R(H) curves can be identified according to the field intervals of the resistance minima.Moreover,in between these two regions,variation of the minima spacing was observed.Our results provide strong evidence of the coexistence of interstitial vortices in the islands and fluxoids in the holes.     

加强新时期广播电视无线覆盖网的建设

广播电视无线覆盖网在整个广播电视覆盖中占有重要地位,而且随着广播电视数字化、网络化的发展,地位越来越重要,应进一步加强对这方面工作的管理,从体制上、管理上、资金投入上加以研究和解决。     

基于磁性隧道结技术的新型准自旋场效应晶体管

近年来,自旋晶体管作为具有强大功能的未来集成电路的组成部分已得到相当多的关注.实现自旋晶体管,至关重要的是提高半导体中自旋注入和自旋检测的效率.然而,这并非容易,因为在实际中的铁磁/半导体界面存在很多问题.     

Abnormal magnetoresistance behavior in Nb thin film with rectangular arrays of antidots

Magnetoresistance in superconducting Nb films perforated with rectangular arrays of antidots (holes) is investigated at various temperatures and currents. Normally, the magnetoresistance increases with the increasing magnetic field. In this paper, we report a reverse behavior in a certain range of high fields after vortex reconfiguration transition, where the resistances at non-matching fields are smaller than those in the low field regime. This phenomenon is due to a strong caging effect, in which the interstitial vortices are trapped among the pinned multiquanta vortices. This effect is temperature and current dependent.     

Role of defects in magnetic properties of Fe-doped SnO2 films fabricated by the Sol--Gel method

This paper obtains the room temperature ferromagnetism in Sn1 xFexO2 films fabricated by the Sol-Gel method.X-ray diffraction results show that Fe doping inhibits the growth of SnO2 and Fe3+ ions occupy the Sn sites.The measurement of resistance excludes the free carrier inducing ferromagnetism.Moreover,the temperature dependence of magnetization has been better fitted by the Curie-Weiss law and bound magnetic polaron(BMP) theory.An enhancement of ferromagnetism is achieved by annealing the samples with x = 7.1% in H2,and a decrease of oxygen flow rate.All these results prove that the BMP model depending on defects can explain ferromagnetism in diluted magnetic oxides.     

同步广播中的音频同步解决方案

本文分析了同步广播覆盖中遇到的音频系统延时问题,提供了音频信号系统延时的量化测量方法,并在此基础上形成了实用的音频同步解决方案,作为同步广播覆盖设计中高频同步的重要补充,进一步增强了覆盖区无缝链接的可行性。     

Correlation between Electroresistance and Magnetoresistance in Slight Oxygen-Deficient Nd0.67Sr0.33MnO3-δ Polycrystalline Ceramics

A colossal electroresistance effect is found in Nd0.67Sr0.33MnO3-δ polycrystalline ceramics with a very slight oxygen deficiency ~ ~ 0.05. The electroresistance behaviour of Nd0.67Sr0.33MnO3-δ（δ= 0.05） displays the striking similarity to its counterpart magnetoresisnce. It reveals that the boundary effect plays an important role in electroresistance and the same physical origin is likely responsible for both magnetoresistance and electroresistance effects in Nd0.67Sr0.33MnO3-δ polycrystals.     

Abnormal magnetoresistance behavior in Nb thin films with rectangular arrays of antidots

Magnetoresistance in superconducting Nb films perforated with rectangular arrays of antidots （holes） is investigated at various temperatures and currents. Normally, the magnetoresistance increases with the increasing magnetic field. In this paper, we report a reverse behavior in a certain range of high fields after vortex reconfiguration transition, where the resistances at non-matching fields are smaller than those in the low field regime. This phenomenon is due to a strong caging effect, in which the interstitial vortices are trapped among the pinned multiquanta vortices. This effect is temperature and current dependent.     

八羟基喹啉锌非晶薄膜器件的制备和开关特性

介绍了八羟基喹啉锌(Znq2)有机薄膜及器件的制备方法.X射线衍射谱指出,用真空蒸发方法制备的Znq2薄膜呈非晶态结构;通过对Znq2有机薄膜I-Ⅴ曲线的分析,揭示了Znq2薄膜的开关特性.基于分子在电场作用下的空间取向的变化,对这一现象提出了一种可能的理论解释.