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Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain 下载免费PDF全文
In this paper, we demonstrate that a Schottky drain can improve the forward and reverse blocking voltages(BVs)simultaneously in AlGaN/GaN high-electron mobility transistors(HEMTs). The mechanism of improving the two BVs is investigated by analysing the leakage current components and by software simulation. The forward BV increases from72 V to 149 V due to the good Schottky contact morphology. During the reverse bias, the buffer leakage in the Ohmicdrain HEMT increases significantly with the increase of the negative drain bias. For the Schottky-drain HEMT, the buffer leakage is suppressed effectively by the formation of the depletion region at the drain terminal. As a result, the reverse BV is enhanced from-5 V to-49 V by using a Schottky drain. Experiments and the simulation indicate that a Schottky drain is desirable for power electronic applications. 相似文献
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森林环境的特殊性导致物联网技术在林业的实际应用中还存在诸多困难。该文提出一种结合物联网技术、嵌入式技术、网络技术的智慧森林监测系统构架。该系统采用SX1278芯片设置LoRa收发器配合STM32F103微处理器构建监测节点,采用SX1301配合树莓派构建多业务网关,并完成组网及对森林环境因子的采集、传输和汇集实验;后台服务软件支持用户通过PC机网页端或手机端访问,完成所有监测数据的实时显示、历史查询、数据分析等功能。在设计过程中,针对林区特点综合考虑了系统的成本、低功耗、可靠性、扩展性等。该系统已部署在哀牢山区,并稳定运行了1年半。 相似文献
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在微酸性介质中,铁(Ⅱ)与过氧化氢反应产生的羟基自由基可氧化亮绿SF,使其在吸收峰632nm处的吸光度降低。此反应的最佳条件:①反应时间为20min;②溶液的pH为3.0;③铁(Ⅱ)的初始浓度为100μmol·L-1;④反应温度为25℃。过氧化氢的浓度在50μmol·L-1以内与其吸光度的降低值(ΔA)呈线性关系,检出限(3s/k)为0.25μmol·L-1。据此提出了水发产品浸泡液中残留的痕量过氧化氢的光度测定法。方法用于3个水发产品浸泡液样品的分析,加标回收率在91.0%~112%之间,测定值的相对标准偏差(n=5)在1.9%~2.5%之间。 相似文献
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A voltage-controlled ring oscillator (VCO) based on a full enhancement-mode InAlAs/InGaAs/InP high electron mobility transistor (HEMT) logic is proposed. An enhancement-mode HEMT (E-HEMT) is fabricated, whose threshold is demonstrated to be 10 mV. The model of the E-HEMT is established and used in the SPICE simulation of the VCO. The result proves that the full E-HEMT logic technology can be applied to the VCO. And compared with the HEMT DCFL technology, the complexity of our fabrication process is reduced and the reliability is improved. 相似文献
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