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This paper reports that a novel type of suspended ZnO nanowire field-effect
transistors (FETs) were successfully fabricated using a
photolithography process, and their electrical properties were
characterized by I--V measurements. Single-crystalline ZnO
nanowires were synthesized by a hydrothermal method, they were used
as a suspended ZnO nanowire channel of back-gate field-effect
transistors (FET). The fabricated suspended nanowire FETs showed a
p-channel depletion mode, exhibited high on--off current ratio of
~105. When VDS=2.5 V, the peak transconductances
of the suspended FETs were 0.396 μS, the oxide capacitance was
found to be 1.547 fF, the pinch-off voltage VTH was about
0.6 V, the electron mobility was on average 50.17 cm2/Vs. The
resistivity of the ZnO nanowire channel was estimated to be
0.96× 102Ω cm at VGS = 0 V. These
characteristics revealed that the suspended nanowire FET fabricated
by the photolithography process had excellent performance. Better
contacts between the ZnO nanowire and metal electrodes could be
improved through annealing and metal deposition using a focused ion
beam. 相似文献
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Device research on GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition 下载免费PDF全文
This paper applies a novel quad-layer resist and e-beam
lithography technique to fabricate a GaAs-based InAlAs/InGaAs
metamorphic high electron mobility transistor (HEMT) grown by metal
organic chemical vapour deposition (MOCVD). The gate length of
the metamorphic HEMT was 150~nm, the maximum current density was
330~mA/mm, the maximum transconductance was 470~mS/mm, the threshold
voltage was -0.6~V, and the maximum current gain cut-off frequency
and maximum oscillation frequency were 102~GHz and 450~GHz,
respectively. This is the first report on tri-termination devices
whose frequency value is above 400~GHz in China. The excellent
frequency performances promise the possibility of metamorphic HEMTs
grown by MOCVD for millimetre-wave applications, and more
outstanding device performances would be obtained after optimizing
the material structure, the elaborate T-gate and other device
processes further. 相似文献
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优化了GaAs基InGaP/AlGaAs/InGaAs赝配高电子迁移率晶体管(PHEMT)的外延结构,有利于获得增强型PHEMT的正向阈值电压.采用光学接触式光刻方式,实现了单片集成0.8μm栅长GaAs基InGaP/AlGaAs/InGaAs增强/耗尽型PHEMT.直流和高频测试结果显示:增强型(耗尽型)PHEMT的阈值电压、非本征跨导、最大饱和漏电流密度、电流增益截止频率、最高振荡频率分别为0.1V(-0.5V),330mS/mm(260mS/mm),245mA/mm(255mA/mm),14.9GHz(14.5GHz)和18GHz(20GHz).利用单片集成增强/耗尽型PHEMT实现了直接耦合场效应晶体管逻辑反相器,电源电压为1V,输入0.15V电压时,输出电压为0.98V;输入0.3V电压时,输出电压为0.18V. 相似文献
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本文用曲线积分对卷积积分作了图示解析,使积分区间的确定变得很直观、简便。对于复杂激励信号或数据表的数值卷积运算,也相应给出了图示算法。 相似文献
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目前,大多数固网运营商都有网上业务受理系统以及电话业务受理系统,希望通过这些形式方便用户,减轻营业厅压力。但是根据调查发现,具有上网条件、知道能够上网办理业务并且愿意上网办理业务的用户微乎其微。而电话受理这种方式,虽然比较简单,但目前仍然不被广大用户所认知,也就是说没有形成品牌效应,还没有发挥其应有的作用。 相似文献
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提出了一种在自相关域上,以相关函数值为参数,利用单边自相关序列的线性预测误差去除语音中加性噪声的方法。该方法首先对含噪语音进行单边自相关处理,以语音信号的单边自相关序列替代语音信号序列,进而对该序列进行线性预测分析后,获得线性预测分析系数,并求得线性预测误差。根据误差能量与信号能量的比例关系,确定减因子u,从含噪语音中根据减因子u的大小减去预测误差,即可抑制噪声误差能量。实验表明;上述方法在低信噪比时,仍能较好地保留语音信号的频谱结构,使音质不至于下降。 相似文献