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用溶胶-凝胶技术在Pt/Ti/SiO2/Si上制备了PZT薄膜,并采用剥离技术与热处理的方法解决了Pt电极的图形化,在结晶热处理前,利用PZT腐蚀液对PZT进行图形化腐蚀.分别用SEM,XRD,EDX对电极和PZT薄膜的相貌、相结构以及化学组分进行了分析.结果表明:所制备的PZT薄膜具有完全的钙钛矿型结构;这种图形化的工艺方法大大改善了电极和PZT的图形化条件,在不影响电极和PZT性能的同时,提高了电极和PZT的图形质量;底电极和PZT的图形化过程,避免了强酸长时间的腐蚀,大大提高了PZT薄膜的制备与MEMS工艺的兼容性. 相似文献
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Pt/Ti Electrodes of PZT Thin Films Patterning by Novel Lift-Off Using ZnO as a Sacrificial Layer
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We achieve a successful novel lift-off of patterning Pt/Ti electrodes on SiO2/Si substrates by employing ZnO sacrificial layer deposition and patterning, successive uniform Pt/Ti deposition and final lift-off. Then we deposit PZT thin films on the electrodes. Compared with the conventional lift-off processes for the electrodes, this novel process does not need post-annealing, which must be performed after conventional lift-off process. It is demonstrated that the electrodes patterned by the novel lift-off process have stronger adhesion. The electrodes and the PZT films on the electrodes are more compact and smoother than those by the conventional lift-off process. 相似文献
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PZT薄膜的制备及其与MEMS工艺的兼容性 总被引:2,自引:0,他引:2
用溶胶-凝胶技术在Pt/Ti/SiO2/Si上制备了PZT薄膜,并采用剥离技术与热处理的方法解决了Pt电极的图形化,在结晶热处理前,利用PZT腐蚀液对PZT进行图形化腐蚀.分别用SEM,XRD,EDX对电极和PZT薄膜的相貌、相结构以及化学组分进行了分析.结果表明:所制备的PZT薄膜具有完全的钙钛矿型结构;这种图形化的工艺方法大大改善了电极和PZT的图形化条件,在不影响电极和PZT性能的同时,提高了电极和PZT的图形质量;底电极和PZT的图形化过程,避免了强酸长时间的腐蚀,大大提高了PZT薄膜的制备与MEMS工艺的兼容性. 相似文献
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