纳米晶复合Nd2Fe14B/α-Fe合金制备与磁性能的研究

采用熔体快淬及晶化处理工艺制备Nd11Fe71Co8V1.5Cr1B7.5纳米晶合金。经21m·s-1快淬及640℃ 4min晶化处理后,制成的粘结磁体的磁性能最佳,为:Br=0.64T,JHc=903.5kA·m-1,(BH)max=71kJ·m-3。添加Cr元素可提高内禀矫顽力,从而提高最大磁能积。     

High throughput N-modular redundancy for error correction design of memristive stateful logic

Memristive stateful logic is one of the most promising candidates to implement an in-memory computing system that computes within the storage unit. It can eliminate the costs for the data movement in the traditional von Neumann system. However, the instability in the memristors is inevitable due to the limitation of the current fabrication technology, which incurs a great challenge for the reliability of the memristive stateful logic. In this paper, the implication of device instability on the reliability of the logic event is simulated. The mathematical relationship between logic reliability and redundancy has been deduced. By combining the mathematical relationship with the vector-matrix multiplication in a memristive crossbar array, the logic error correction scheme with high throughput has been proposed. Moreover, a universal design paradigm has been put forward for complex logic. And the circuit schematic and the flow of the scheme have been raised. Finally, a 1-bit full adder (FA) based on the NOR logic and NOT logic is simulated and the mathematical evaluation is performed. It demonstrates the scheme can improve the reliability of the logic significantly. And compared with other four error corrections, the scheme which can be suitable for all kinds of R-R logics and V-R logics has the best universality and throughput. Compared with the other two approaches which also need additional complementary metal-oxide semiconductor (CMOS) circuits, it needs fewer transistors and cycles for the error correction.     

A 3.125-Gb/s inductroless transimpedance amplifier for optical communication in 0.35μm CMOS Xu Hui(徐晖), Feng Jun(冯军), Liu Quan(刘全), Li Wei(李伟)

采用0.35μm CMOS工艺设计了一种适用于光通信的低功耗前置放大器,芯片最高工作速率可达3.125Gb/s。该前置放大器采用RGC (Regulated Cascode)结构作为输入级,同时引入消直流电路来稳定电路的直流工作点。在片测试结果表明,前置放大器的跨阻增益为54.2dBΩ,-3dB带宽为2.31GHz,平均等效输入噪声电流谱密度为18.8pA/?Hz;输入为2.5Gb/s和3.125Gb/s信号时均可获得清晰眼图;3.3V单电源供电时,功耗仅为58.08mW,其中20mW来自输出缓冲。芯片面积为465μm435μm。     

强度不变的自动模式识别技术

针对光学模式识别技术用化要求，提出一种新的图像预处理算法，使识别现场光照明强度及分布的变化对识别效率所带来的影响大大降低。采用该算法进行实时硬件光学相关试验结果证实应用该算法可以实现强度的自动目标识别。     

使用Winsock控件实现对网络的访问

在开发经验的基础上 ,介绍了在进行网络通信时如何选用 TCP/IP协议 ,并结合实践经验重点描述了用 Winsock控件访问网络的 Client/Server程序设计步骤     

民航气象信息网络安全分析

首先阐述了民航气象信息网络的功能,对目前网络存在的安全问题进行了分析,并对如何解决这些安全问题进行了探讨.     

高精度模数转换器积分非线性建模与校正

积分非线性（INL）是影响ADC性能重要的参数。文中采用基于建立动态模型的方法,对高精度模数转换器芯片AD6645的积分非线性进行建模与校正,使得AD6645的性能得到大幅提升。测试结果表明,在30 MHz带宽范围内,ADC的无杂散动态范围、信纳比和有效位数等指标均得到提高。另外,此校准算法具有一定的普适性,有望适用于所有流水线ADC的校准。     

A3Ln（Ⅲ）1—xTb（Ⅲ）x（A=邻氨基苯甲酸;Ln=La,Gd,Y;x=0—0.1）稀土配？…

采用共沉淀法合成了掺杂Ｌａ、Ｇｄ、Ｙ的Ｔｂ－邻氨基苯甲酸配合物,研究其荧光性能,结果显示,掺杂Ｌａ、Ｇｄ、Ｙ后,对Ｔｂ配合物的发光有增敏作用,讨论了不同的掺杂离子（Ｌａ、Ｇｄ、Ｙ）及掺杂量对其荧光性能的影响。发现,当掺杂离子取代大部分Ｔｂ＾３＋时,其发光增强仍十分显著。     

A3Ln(Ⅲ)1-xTb(Ⅲ)x(A=邻氨基苯甲酸;Ln=La、Gd、Y; x=0-0.1)稀土配合物的荧光性能

采用共沉淀法合成了掺杂 L a、 Gd、 Y的 Tb-邻氨基苯甲酸配合物 ,研究其荧光性能 ,结果显示 ,掺杂L a、Gd、Y后 ,对 Tb配合物的发光有增敏作用 ,讨论了不同的掺杂离子 (L a、Gd、Y)及掺杂量对其荧光性能的影响。发现 ,当掺杂离子取代大部分 Tb3+时 ,其发光增强仍十分显著。