氮化镓HEMT器件辐射效应综述

在高频、大功率、高温、高压等领域,氮化镓高电子迁移率晶体管(HEMT)器件因其优异的耐辐射性能而被广泛地应用于卫星、太空探测、核反应堆等领域。尽管从理论和一些试验研究中可以得知,氮化镓材料具有良好的耐辐射特性,但在实际应用中,因其制作工艺及结构等因素的影响,氮化镓HEMT器件的耐辐射特性受到了很大的影响和挑战。本文介绍了氮化镓HEMT器件几种辐射效应,并对氮化镓HEMT器件辐射的研究进行了综述。     

HEMT器件质子辐射效应仿真

GaN基高电子迁移率晶体管(HEMT)器件具有抗高频、耐高温、大功率、抗辐射等特性,在核反应堆、宇宙探测等辐射环境中具有广阔的应用前景。借助SRIM软件仿真1.8 MeV质子辐射对不同AlGaN势垒层纵向尺寸下的常规耗尽型器件内部产生空位密度的影响,并观察空位密度随深度的变化规律。在最优AlGaN势垒层厚度条件下,通过仿真对比5种不同栅氧层材料的MIS-HEMT器件,发现氮化铝(AlN)栅氧层材料具有相对较好的抗辐射效果。     

Grafting of Acrylamide and Trimethylolpropane Triglycidyl Ether onto the Gellan Gum: Synthesis and Characterization

To improve the physiochemical properties of gellan gum(GG), GG was modified with acrylamide and trimethylolpropane triglycidyl ether(TTE). The structure and morphology of modified GG were characterized by Fourier transform infrared(FT-IR) spectroscopy, X-ray diffraction(XRD), differential scanning calorimetry(DSC) and scanning electron microscopy(SEM). The characteristic peaks at 3448, 2788, 1654, 1411, 1117 and 1044 cm~(-1) in the FT-IR spectrum confirm the modification. The XRD and DSC data revealed that the modification enhanced the thermal stability of GG. SEM analysis suggested the modification introduced a porous microstructure, resulting in the adsorption of crystal violet. In addition, the adsorption capacity, thermal stability and swelling property of GGTTE3 were superior to GGTTE1, GGTTE2, GGTTE4 and GGTTE5.