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Numerical simulation of transconductance of AlGaN/GaN heterojunction field effect transistors at high temperatures
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Based on the investigation of the influence of temperatures on
parameters, including polarization, electron mobility, thermal conductivity,
and conduction band discontinuity at the interface between AlGaN and GaN,
the temperature dependence of transconductance for AlGaN/GaN heterojunction
field effect transistors (HFETs) has been obtained by using a
quasi-two-dimensional approach, and the calculated results are in good
agreement with the
experimental data. The reduction in transconductance at high
temperatures is
primarily due to the decrease in electron mobility in the channel.
Calculations also demonstrate that the self-heating effect becomes serious
as environment temperature increases. 相似文献
2.
碳化硅MPS的功率损耗特性分析 总被引:1,自引:0,他引:1
采用解析模型模拟了 4 H-Si C混合 Pi N/Schottky二极管 (MPS)的功率损耗及反向恢复 ,研究了外延层掺杂浓度和厚度、PN结网格宽度等主要的结构参数对该器件功率损耗的影响。模拟结果表明 ,对文中所述的MPS,在 770 K左右具有最小功耗 ,且肖特基区所占的面积比越大 ,外延层掺杂浓度越高 ,厚度越小 ,最小功耗越低 ,最小功耗对应的温度也越高。论证了 MPS在一个较高的温度下具有很低的功耗 ,适合功率系统的应用 相似文献
3.
A CAD oriented quasi-analytical large-signal drain current model for 4H-SiC MESFETs 总被引:1,自引:0,他引:1
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This paper reports that a 4H-SiC MESFET (Metal Semiconductor Field
Effect Transistor) large signal drain current model based on
physical expressions has been developed to be used in CAD tools. The
form of drain current model is based on semi-empirical MESFET model,
and all parameters in this model are determined by physical
parameters of 4H-SiC MESFET. The verification of the present model
embedded in CAD tools is made, which shows a good agreement with
measured data of large signal DC I-V characteristics, PAE (power
added efficiency), output power and gain. 相似文献
4.
对非线性电流源Ids(Vgs,Vds)的准确描述是Al GaN/GaN HEMT大信号模型的最重要部分之一.Materka模型考虑了夹断电压与Vds的关系,其模型参数只有三个,但是Ids与Vgs的平方关系不符合实际,计算结果与测量数据有误差.我们在考虑了栅电压与漏电流的关系及不同栅压区漏电流随漏电压斜率改变的基础上,提出了改进的高电子迁移率晶体管(HEMT)的直流特性模型.采用这个模型,计算了Al GaN/GaN HEMT器件的大信号I-V特性,并与实际测量数据进行了比较.实验结果表明改进的模型更精确,Ids与Vgs的呈2.5次方的指数关系. 相似文献
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