全文获取类型
收费全文 | 55篇 |
免费 | 11篇 |
国内免费 | 11篇 |
专业分类
化学 | 6篇 |
力学 | 1篇 |
数学 | 1篇 |
物理学 | 14篇 |
无线电 | 55篇 |
出版年
2024年 | 1篇 |
2023年 | 1篇 |
2022年 | 3篇 |
2020年 | 1篇 |
2019年 | 2篇 |
2018年 | 2篇 |
2017年 | 1篇 |
2016年 | 1篇 |
2015年 | 3篇 |
2014年 | 1篇 |
2013年 | 1篇 |
2012年 | 3篇 |
2011年 | 4篇 |
2010年 | 7篇 |
2009年 | 8篇 |
2008年 | 6篇 |
2007年 | 7篇 |
2006年 | 6篇 |
2005年 | 2篇 |
2004年 | 1篇 |
2003年 | 3篇 |
2002年 | 2篇 |
2001年 | 1篇 |
1998年 | 2篇 |
1991年 | 1篇 |
1990年 | 2篇 |
1989年 | 2篇 |
1988年 | 1篇 |
1987年 | 2篇 |
排序方式: 共有77条查询结果,搜索用时 15 毫秒
1.
2.
3.
4.
The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology 下载免费PDF全文
Variation of substrate background doping will affect the charge collection of active and passive MOSFETs in complementary metal-oxide semiconductor (CMOS) technologies, which are significant for charge sharing, thus affecting the propagated single event transient pulsewidths in circuits. The trends of charge collected by the drain of a positive channel metal-oxide semiconductor (PMOS) and an N metal-oxide semiconductor (NMOS) are opposite as the substrate doping increases. The PMOS source will inject carriers after strike and the amount of charge injected will increase as the substrate doping increases, whereas the source of the NMOS will mainly collect carriers and the source of the NMOS can also inject electrons when the substrate doping is light enough. Additionally, it indicates that substrate doping mainly affects the bipolar amplification component of a single-event transient current, and has little effect on the drift and diffusion. The change in substrate doping has a much greater effect on PMOS than on NMOS. 相似文献
5.
6.
The dispersion relations of the surface polariton in a semi-infinite wire medium with spatial dispersion are analysed. In comparison with the traditional spatial dispersive medium there only exists one branch instead of multibranch for the dispersion curve. The possibility of the experimentally observing the surface polaritons by attenuated total reflection is simulated numerically. 相似文献
7.
8.
Parasitic bipolar amplification in a single event transient and its temperature dependence 下载免费PDF全文
Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in a single event transient (SET) current of a single transistor and its temperature dependence are studied. We quantify the contributions of different current components in a SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both 130-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of the SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of a single transistor. 相似文献
9.
光伏项目施工基本采用设计采购施工(engineering procurement construction,EPC)总承包或小EPC方式(组件、逆变器、支架等主设备采购由业主负责),光伏EPC管理模式与传统建筑产业EPC管理模式有很大的不同,具有生命周期短、投资和技术含量高、涉及的专业领域多等特点,而南方光伏项目EPC管理由于涉及项目拟用土地租赁和前期可研报告不够深入等问题,存在较大管理风险和多重不同的风险因素,对风险管理方法也提出了新的要求。 相似文献
10.