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1.
Meihua Shen Dr. Xinpeng Zhao Dr. Lu Han Nanxi Jin Prof. Song Liu Prof. Tao Jia Prof. Zhijun Chen Prof. Xiuhua Zhao 《Chemistry (Weinheim an der Bergstrasse, Germany)》2022,28(20):e202104137
Solar-driven interfacial vaporization by localizing solar-thermal energy conversion to the air−water interface has attracted tremendous attention. In the process of converting solar energy into heat energy, photothermal materials play an essential role. Herein, a flexible solar-thermal material di-cyan substituted 5,12-dibutylquinacridone (DCN−4CQA)@Paper was developed by coating photothermal quinacridone derivatives on the cellulose paper. The DCN−4CQA@Paper combines desired chemical and physical properties, broadband light-absorbing, and shape-conforming abilities that render efficient photothermic vaporization. Notably, synergetic coupling of solar-steam and solar-electricity technologies by integrating DCN−4CQA@Paper and the thermoelectric devices is realized without trade-offs, highlighting the practical consideration toward more impactful solar heat exploitation. Such solar distillation and low-grade heat-to-electricity generation functions can provide potential opportunities for fresh water and electricity supply in off-grid or remote areas. 相似文献
2.
3.
Bo Jin Xi Wang Jing Chen Feng Zhang Xinli Cheng Zhijun Chen 《Applied Surface Science》2006,252(16):5627-5631
The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si1−xGex (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si1−xGex (x is minimal) layer moved to Si/SiO2 interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM). 相似文献
4.
Based on the Fourier transform method, a simple closed-form expression for the on-axis power spectrum of ultrashort Gaussian pulsed beams in diffraction at a circular aperture is derived, which permits us to study spectral changes both analytically and numerically. It is shown that for diffracted pulsed beams there exist spectral red and blue shifts, spectral narrowing, and spectral switches in the near field. The aperture diffraction plays an important role in spectral switching, but both the truncation parameter and bandwidth (or equally, Fourier transform limited pulse duration) affect the behavior of spectral switches. 相似文献
5.
D—AKNS族的换位表示 总被引:4,自引:0,他引:4
本文根据曹策问教授的想法,求得了与D-AKNS族发展方程相联系的特征值之泛函梯度与Lenard算子对;并由此得到了D-AKNS族非线性发展方程的换位表示。文末还讨论了换位表示与定态D-AKNS方程之间的关系. 相似文献
6.
Zhijun Yi Tingyu LiuQiren Zhang Yuanyuan Sun 《Journal of Electron Spectroscopy and Related Phenomena》2006
The electronic structures of PbWO4 crystals containing F type color centers with the lattice structure optimized are studied within the framework of the fully relativistic self-consistent Direc–Slater theory, using a numerically discrete variational (DV-Xα) method. The calculated results show that F and F+ centers have donor energy level in forbidden band. Their optical transition energy are 1.84 eV, 2.21 eV, respectively, which corresponds to the 680 nm, 550 nm absorption bands. It predicts that the 680 nm, 550 nm absorption bands originate form the F and F+ centers in PbWO4 crystals. 相似文献
7.
Guo Zhijun Niu Yanning Zhang Weiguang Tan Minyu 《Journal of Radioanalytical and Nuclear Chemistry》2004,262(2):331-337
N,N,N',N',N',N'-Hexaethyl-2,2′,2'-(nitrilotrisethyleneoxy-2-benzyloxy)tris(acetamide) (L3) has been prepared and characterized
by using IR, 1H NMR and positive-ion FAB mass spectra. The extraction of Th4+ and UO2
2+ with N,N,N',N',N',N'-hexaethyl-2,2',2'- (nitrilo-trisethyleneoxy)tris(acetamide) (L1), N,N,N',N',N',N'-hexaisopropyl-2,2',2'-(nitrilotrisethyleneoxy)tris(acetamide)
(L2), and L3 was studied at 20±1 °C as a function of diluent, concentration of free extractant in organic phase and concentration
of picrate in aqueous phase. It was found that the extracting powers of L1 and L2 for Th4+ are almost identical. The extracting power of L2 for UO22+ was slightly higher than that of L1. The difference in terminal
groups (ethyl or isopropyl) of the extractants (L1 and L2) with same backbone has a little effect on the extracting power
for both Th4+ and UO22+. The extracting powers of L3 for both Th4+ and UO22+ were larger than those of L1 and L2. The extractants
(L1 and L3) having the same terminal group (ethyl) with different backbones have obviously different extracting powers for
Th4+ or UO22+. The extracting powers of all three extractants L1, L2, and L3 for Th4+ were larger than those for UO22+. The
compositions of extracted species in organic phase were predominantly ThL(Pic)3NO3 and UO2L(Pic)NO3, respectively (L denotes
L1, L2 and L3).
This revised version was published online in July 2006 with corrections to the Cover Date. 相似文献
8.
接枝和交联对纳米Si02改性NR/PP共混型热塑弹性体的影响 总被引:2,自引:0,他引:2
动态硫化制备纳米二氧化硅(SiO2)改性天然橡胶,聚丙烯共混型热塑性弹性体(NR/PPTPE).研究了马来酸酐,苯乙烯,过氧化二异丙苯(MAH/St/DCP)多单体“就地”熔融接枝、交联对TPE力学性能、耐溶剂性能和耐热变形性能的影响,并用SEM分析了TPE的断面形貌.结果表明:纳米SiO2和MAH/St/DCP的最佳质量分数分别为0.03和0.0375/0.0188/0.00375时,MAH/St/DCP接枝、交联改性NR/PP/纳米SiO:TPE的力学性能、耐溶剂性能和耐热变形性能最佳.MAH/St/DCP“就地”接枝、交联通过细化交联NR分散相、改善交联NR分散的均匀性和增加两相之间的共交联,使NR与PP两相界面结合强度明显提高,NR/PPTPE的综合性能得到明显的改善. 相似文献
9.
Polyacrylamide (PAL) was physically adsorbed onto a hydroxylated silicon surface to form a uniform PAL film and the up-top PAL thin film was treated by nitrogen (N2) plasma for surface modification. The atomic composition of the modified surface of the PAL film adsorbed on silicon substrate was analyzed with Fourier Transform Infrared Spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). The surface energy of PAL film was calculated from the data of contact angle of three-probe liquid. The FTIR results show an increase of peak intensity at 1214 cm−1 (NH2 stretch vibration) after the nitrogen plasma treatment, which confirms that the nitrogen was grafted to the PAL surface in the process of N2-plasma treatment. The XPS results show that the ratio of relative intensity of N1s to O1s increases with increasing the plasma treatment time, which further affirms the formation of the amine groups on the PAL surface after the nitrogen plasma treatment. The surface tension increases with increasing the plasma grafting time. However, the surface energy decreases rapidly at the early stage when stored in air and approaches to an equilibrium value. It suggests that some physically-adsorbed ions and alkyl radicals on PAL surface can rapidly lose their activities. The increase of the surface tension of the plasma treated PLA films is due to the amine groups covalently grafted to PAL surface. 相似文献
10.
Summary The sorption of Th(IV) onto TiO2 was studied by the batch technique as a function of pH and ionic strength at moderate concentration (10-4-10-5 mol/l) and in the presence and absence of phosphate. It was found that the sorption rate of Th(IV) was relatively slow, the
sorption percent was abruptly increased from pH 2 to 4, and the sorption was decreased with increasing ionic strength as a
whole. In the concentration range of Th(IV) from trace concentration to 1.4 . 10-4 mol/l and in the absence of phosphate, the sorption isotherms were roughly fitted the Freundlich equation at different ionic
strengths and approximately constant pH. These sorption characteristics of Th(IV) onto TiO2 were compared with those of uranyl on the same sorbent. In addition, the positive effect of phosphate on the sorption of
Th(IV) onto TiO2 was demonstrated obviously and can be attributed to strong surface binding of phosphate, and the subsequent formation of
ternary surface complexes of Th(IV). The difference between the sorption characteristics of Th(IV) ions and uranyl ions onto
TiO2 is discussed. 相似文献