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1.
Julia K Pruns Jens-Peter Vietzke Manfred Strassner Claudius Rapp Ulrich Hintze Wilfried A K?nig 《Rapid communications in mass spectrometry : RCM》2002,16(3):208-211
A new solvent-free sample preparation method using silver trifluoroacetate (AgTFA) was developed for the analysis of low molecular weight paraffins and microcrystalline waxes by laser desorption/ionization time-of-flight mass spectrometry (LDI-TOFMS). Experiments show that spectral quality can be enhanced by dispersing AgTFA directly in liquid paraffins without the use of additional solvents. This preparation mixture is applied directly to the MALDI probe. Solid waxes could be examined by melting prior to analysis. The method also provides sufficiently reproducible spectra that peak area ratios between mono- and bicyclic alkane peaks indicated variations in the cycloalkane content of paraffin samples. Dehydrogenation of hydrocarbons observed during the desorption/ionization process was studied by analysis of alkane standards. 相似文献
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The versatile behavior of a trihydrazidophosphoradamantane allowing the synthesis of a variety of neutral, mono- or di-cationic water-soluble molecules of potential interest for biphasic catalysis is reported. 相似文献
3.
本文对特征P的基域F引入适当的Galois群T,讨论p置换模的Green环的Conlon比析在Galois群T作用下的动态,证明了在T作用下p置换模的Green环的不动点集重合于置换模的Green环。 相似文献
4.
We build a metric space which is homeomorphic to a Cantor set but cannot be realized as the attractor of an iterated function system. We give also an example of a Cantor set K in R3 such that every homeomorphism f of R3 which preserves K coincides with the identity on K. 相似文献
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Milan Medved? 《Journal of Mathematical Analysis and Applications》2002,267(2):643-650
A criterion for the nonexplosion of solutions to semilinear evolution equations on Banach spaces is proved. The result is obtained by applying a modification of the Bihari type inequality to the case of a weakly singular nonlinear integral inequality. 相似文献
7.
We consider the one-dimensional steady-state semiconductor deviceequations modelling a pnpn device. There are two relevant scalingsof the equations corresponding to small and large applied voltages.In both scalings, the semiconductor equations can be consideredas singularly perturbed. It turns out that the small-voltagescaling breaks down for current values between two saturationcurrents. In that interval, the large-voltage scaling has tobe employed. For both scalings, we derive the first-order termsof an asymptotic expansion and show that the reduced problemhas a solution. An example verifies that the current-voltagecurves obtained have the expected qualitative structure. 相似文献
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Anti-BZ-Structure in Effect Algebras 总被引:1,自引:0,他引:1
The definitions of sharply approximating effect algebras, anti-BZ-effect algebras, central approximating effect algebras, and S-anti-BZ-effect algebras are given, the relationships between sharply approximating effect algebras and anti-BZ-effect algebras, between central approximating effect algebras and anti-BZ-effect algebras are established, and the set of anti-BZ-sharp elements in S-anti-BZ-effect algebras is proved to be an orthomodular lattice. 相似文献