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1.
O. Wibbelhoff C. Meier A. Lorke P. Schafmeister A. D. Wieck 《Physica E: Low-dimensional Systems and Nanostructures》2004,21(2-4):516
We use frequency-dependent capacitance–voltage spectroscopy to study the dynamic charging of self-assembled InAs quantum dots. With increasing frequency, the AC charging becomes suppressed, beginning with the low-energy states. By applying an in-plane magnetic field, we generate an additional magnetic confinement that alters the tunneling barrier and hence the charging dynamics. In traveling through the potential barrier, the electrons acquire an additional momentum k0, proportional to the magnetic field B. As the tunneling is enhanced, when k0 matches the maximum of the electronic wave function Ψ (in momentum representation), we are able to map out the shape of Ψ by varying B. 相似文献
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Spatzek S Greilich A Economou SE Varwig S Schwan A Yakovlev DR Reuter D Wieck AD Reinecke TL Bayer M 《Physical review letters》2011,107(13):137402
Coherent interactions between spins in quantum dots are a key requirement for quantum gates. We have performed pump-probe experiments in which pulsed lasers emitting at different photon energies manipulate two distinct subsets of electron spins within an inhomogeneous InGaAs quantum dot ensemble. The spin dynamics are monitored through their precession about an external magnetic field. These measurements demonstrate spin precession phase shifts and modulations of the magnitude of one subset of oriented spins after optical orientation of the second subset. The observations are consistent with results from a model using a Heisenberg-like interaction with μeV strength. 相似文献
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Gareth AD Hardy Nesrina Imami Mark R Nelson Ann K Sullivan Ron Moss Marlén MI Aasa-Chapman Brian Gazzard Frances M Gotch 《Journal of immune based therapies and vaccines》2007,5(1):6-12
Background
Fully functional HIV-1-specific CD8 and CD4 effector T-cell responses are vital to the containment of viral activity and disease progression. These responses are lacking in HIV-1-infected patients with progressive disease. We attempted to augment fully functional HIV-1-specific CD8 and CD4 effector T-cell responses in patients with advanced chronic HIV-1 infection. 相似文献7.
D. Reuter V. Stavarache A.D. Wieck M. Schwab R. Oulton M. Bayer 《Physica E: Low-dimensional Systems and Nanostructures》2006,32(1-2):73
We have performed single dot photoluminescence and time-resolved ensemble photoluminescence measurements on InAs quantum dots embedded in a lateral in-plane p–i–n or n–i–n device, respectively, which makes the application of lateral electric fields, i.e. field direction perpendicular to the growth direction, feasible. Time-resolved measurements show an increase in the radiative lifetime of up to 30% with increasing field. We attribute this to the reduced overlap between the electron and hole wave functions. Single dot spectroscopy revealed a small red-shift of the emission energies of maximum 0.5 meV. This shift can be explained by the quantum confined Stark effect taking into account that the red-shift due to the band-tilting is partly compensated by a decrease in exciton binding energy. 相似文献
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We study the photoluminescence of self-assembled (In,Ga)As/GaAs quantum dot ensembles with varying confinement potential height. The low energy shift of the s-shell emission with increasing excitation power gives a measure of the Coulomb interaction in these structures as it results from carrier–carrier interactions between the optically injected exciton complexes. When dividing this shift by the dot level splitting, determined by the geometric confinement, we obtain a universal function of the number of involved excitons that is independent of the confinement potential height. This shows an identical scaling of Coulomb interaction and geometric quantization with varying confinement. 相似文献
9.
Focused ion beam implantation of gallium and dysprosium was used to locally insulate the near-surface two-dimensional electron gas of AlxGa1−xN/GaN heterostructures. The threshold dose for insulation was determined to be 2×1010 cm−1 for 90 keV Ga+ and 1×109 cm−1 for 200 keV Dy2+ at 4.2 K. This offers a tool not only for inter-device insulation but also for direct device fabrication. Making use of “open-T” like insulating line patterns, in-plane gate transistors have been fabricated by focused ion beam implantation. An exemplar with a geometrical channel width of 1.5 μm shows a conductance of 32 μS at 0 V gate voltage and a transconductance of around 4 μS, which is only slightly dependent on the gate voltage. 相似文献
10.
C. Riedesel D. Reuter A. D. Wieck 《Physica E: Low-dimensional Systems and Nanostructures》2004,21(2-4):592
The use of focused ion beam implantation doping of an inverted GaAs/Al1−xGaxAs heterostructure during a growth interruption allows for the lateral modulation of the heterostructure doping. Hence, laterally patterned two dimensional electron gases (2DEGs) are obtained with no further processing steps required. We have performed the direct writing of a 2DEG with a Hall-bar pattern, such that only the application of ohmic contacts was necessary and the sample surface remained unharmed otherwise. The 2DEG has an electron density of 3.6×1011 cm−2 and an electron mobility of 4.8×105 cm2/V s, as determined by magnetotransport measurements. A conventional mesa-etched Hall-bar with almost identical electronic properties has also been studied. Different behaviour of the longitudinal as well as the transversal magnetoresistance for the two Hall-bars is observed and can be concluded to be due to a different confinement potential. 相似文献