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1.
The structure, chemical composition, and magnetic properties of electrochemically deposited nanocrystalline Co-Ni-Fe films
were investigated using a number of techniques. A high saturation magnetic induction up to B
s
= 21 kG was attained. An enhancement of the saturation magnetization compared to the ideal anticipated one was revealed,
which correlated with the nonlinear behavior of the structural phase composition and lattice parameters with the change of
the composition.
The text was submitted by the authors in English. 相似文献
2.
C. Fallnich B. Ruffing Th. Herrmann A. Nebel R. Beigang R. Wallenstein 《Applied physics. B, Lasers and optics》1995,60(5):427-436
We report on a cw mode-locked non-critically phase matched KTP optical parametric oscillator synchronously pumped by a picosecond Ti:Sapphire laser. High average signal output power of up to 950 mW over a large tuning range has been achieved. For this OPO the influence of resonator-length detuning on the output power, pulse duration and spectral bandwidth has been investigated. The measured data are in good agreement with the results of a numerical simulation using a split-step Fourier method which considers the group-velocity mismatch, the group-velocity dispersion and the self-phase modulation. The numerical simulation also describes the measured strong pump depletion and its influence on the OPO output and efficiency. 相似文献
3.
The decomposition of perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) molecules during evaporation of unpurified raw material in ultra high vacuum was studied. The fragments were identified by mass spectrometry and the influence of these fragments and further contaminations of the raw material on the electronic structure of PTCDA thin films was measured by photoemission spectroscopy. Annealing of contaminated PTCDA films was tested as cheap and easy to perform method for (partial) post deposition purification of the contaminated films. 相似文献
4.
Summary We study a countable system of interacting diffusions on the interval [0,1], indexed by a hierarchical group. A particular choice of the interaction guaranties, we are in the diffusive clustering regime. This means clusters of components with values either close to 0 or close to 1 grow on various different scales. However, single components oscillate infinitely often between values close to 0 and close to 1 in such a way that they spend fraction one of their time together and close to the boundary. The processes in the whole class considered and starting with a shift-ergodic initial law have the same qualitative properties (universality). 相似文献
5.
E. D. Mishina N. É. Sherstyuk V. O. Val’dner A. V. Mishina K. A. Vorotilov V. A. Vasil’ev A. S. Sigov M. P. De Santo E. Cazzanelli R. Barberi Th. Rasing 《Physics of the Solid State》2006,48(6):1210-1213
Ferroelectric composite two-dimensional ferroelectric/aluminum oxide nanostructures were studied. A porous aluminum oxide matrix was used as a template into which a ferroelectric precursor was introduced, followed by annealing. The prepared nanostructures were studied using optical second harmonic generation and micro-Raman scattering. 相似文献
6.
7.
Andrzej Dabrowski Erich Robens Peter Klobes Klaus Meyer Przemyslaw Podkocielny 《Particle & Particle Systems Characterization》2003,20(5):311-322
Since a comprehensive survey published in 1999 [1] much work was done in standardizing measuring methods to characterize the surface geometry of dispersed and/or porous solids and to certify reference materials. The present paper is an extension of a short communication [2]. It gives a survey on existing standards and reports on new drafts and proposals. 相似文献
8.
9.
Ph. Komninou Th. Kehagias A. Delimitis G.P. Dimitrakopulos J. Kioseoglou E. Dimakis A. Georgakilas Th. Karakostas 《Superlattices and Microstructures》2004,36(4-6):509
The structural properties of InN thin films, grown by rf plasma-assisted molecular beam epitaxy on Ga-face GaN/Al2O3(0001) substrates, were investigated by means of conventional and high resolution electron microscopy. Our observations showed that a uniform InN film of total thickness up to 1 μm could be readily grown on GaN without any indication of columnar growth. A clear epitaxial orientation relationship of , was determined. The quality of the InN film was rather good, having threading dislocations as the dominant structural defect with a density in the range of 109–1010 cm−2. The crystal lattice parameters of wurtzite InN were estimated by electron diffraction analysis to be a=0.354 nm and c=0.569 nm, using Al2O3 as the reference crystal. Heteroepitaxial growth of InN on GaN was accomplished by the introduction of a network of three regularly spaced misfit dislocation arrays at the atomically flat interface plane. The experimentally measured distance of misfit dislocations was 2.72 nm. This is in good agreement with the theoretical value derived from the in-plane lattice mismatch of InN and GaN, which indicated that nearly full relaxation of the interfacial strain between the two crystal lattices was achieved. 相似文献
10.