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Smirnov A. M. Kremleva A. V. Sharofidinov Sh. Sh. Bugrov V. E. Romanov A. E. 《Physics of the Solid State》2021,63(6):924-931
Physics of the Solid State - A theoretical model of misfit stress relaxation in film/substrate α-Ga2O3/α-Al2O3 heterostructures with allowance for lattice anisotropy of heterostructure... 相似文献
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Panyutin E. A. Sharofidinov Sh. Sh. Orlova T. A. Snytkina S. A. Lebedev A. A. 《Technical Physics》2020,65(3):428-433
Technical Physics - We investigate the possibility of integration of epitaxial SiC and AlN technologies using opposite faces of the common SiC substrate (AlN epitaxy is performed at the final... 相似文献
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Mizerov A. M. Kukushkin S. A. Sharofidinov Sh. Sh. Osipov A. V. Timoshnev S. N. Shubina K. Yu. Berezovskaya T. N. Mokhov D. V. Buravlev A. D. 《Physics of the Solid State》2019,61(12):2277-2281
Physics of the Solid State - The effect of the inversion of polarity in gallium nitride layers from the N-polar GaN layer to the Ga-polar GaN layer was discovered during the sequential growth of... 相似文献
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Physics of the Solid State - The main principles of a new method of growing bulk single-crystal AlN, AlGaN, and GaN films with thickness from 100 μm and more on silicon substrates with a... 相似文献
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Sergeeva O. N. Solnyshkin A. V. Kiselev D. A. Il’ina T. S. Kukushkin S. A. Sharofidinov Sh. Sh. Kaptelov E. Yu. Pronin I. P. 《Physics of the Solid State》2019,61(12):2386-2391
Physics of the Solid State - Dielectric and polar properties of aluminum nitride (AlN) thin films epitaxially grown on differently oriented silicon substrates with the p-type conduction and a... 相似文献
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