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1.
M. Belmeguenai S. Mercone C. Adamo T. Chauveau L. Méchin P. Monod P. Moch D. G. Schlom 《Journal of nanoparticle research》2011,13(11):5669-5675
Nearly 50-nm thick La0.7Sr0.3MnO3 (LSMO) films were grown on Si substrates using molecular beam epitaxy on (001) Si substrates over-layered by a 20 nm thick
SrTiO3 (STO) or by a 20 nm thick CaTiO3 (CTO) film. In addition, a reference LSMO film was directly deposited on a (001) STO substrate by pulsed laser deposition.
For all the samples, X-ray diffraction revealed an excellent epitaxy of the LSMO film and small mosaicity around (001), with
in-plane [100] and [010] cubic axes. The LSMO/CTO films are in-plane compressed while the LSMO/STO ones are in-plane extended.
The temperature dependence of their static magnetic properties was studied using a SQUID, showing a Curie temperature overpassing
315 K for all the samples. Hysteresis loops performed at room temperature (294 K) with the help of a vibrating sample magnetometer
(VSM) are also discussed. At 294 K Micro-strip ferromagnetic resonance (MS-FMR) was used to investigate the dynamic magnetic
properties. It allows concluding to a strong anisotropy perpendicular to the films and to a weak fourfold in-plane anisotropy
with easy axes along the [110] and [1[`1]0 1\bar{1}0 ] directions. Their values strongly depend on the studied sample and are presumably related to the strains suffered by the
films. 相似文献
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CM Thaker S Rayaprol Krushna Mavani DS Rana MS Sahasrabudhe SI Patil DG Kuberkar 《Pramana》2002,58(5-6):1035-1039
The effect of simultaneous substitution of a fluctuating cation and a divalent cation in LaMnO3 perovskite modifies the properties of the material to exhibit large valence colossal magnetoresistance (CMR) effect. A good
example of these properties is (La1−2x
Pr
x
Ca
x
)MnO3 (LPCMO) type CMR material. In this communication it is reported that, with the increase in x (for x=0.1, 0.15, 0.2), the T
c varies between 100 and 120 K with improvisation in metal-insulator transition. Interestingly, resistance increases with x from few hundred ohms to few kilo ohms with corresponding decrease in the unit cell volume. The results of the studies using
X-ray diffraction (XRD), electrical resistivity, magnetoresistance and ac susceptibility measurements on LPCMO samples for
understanding the structural, transport and magnetic properties are discussed in detail. 相似文献
4.
Jang HW Baek SH Ortiz D Folkman CM Das RR Chu YH Shafer P Zhang JX Choudhury S Vaithyanathan V Chen YB Felker DA Biegalski MD Rzchowski MS Pan XQ Schlom DG Chen LQ Ramesh R Eom CB 《Physical review letters》2008,101(10):107602
Direct measurement of the remanent polarization of high quality (001)-oriented epitaxial BiFeO3 thin films shows a strong strain dependence, even larger than conventional (001)-oriented PbTiO3 films. Thermodynamic analysis reveals that a strain-induced polarization rotation mechanism is responsible for the large change in the out-of-plane polarization of (001) BiFeO3 with biaxial strain while the spontaneous polarization itself remains almost constant. 相似文献
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6.
§ 1.Introduction WearegivenkindependentWishartdensitiesofthe (p +q)× (p +q)randomsymmetricpositivedefinitematricesG1,… ,Gktobeg(Gi) =Kexp -12 trR- 1i Gi Gi12 (ni- q-p- 1) ,(1 )wherei=1 ,… ,k,andRidenotesthepopulationcorrelationmatrixofthei thpopulationandKasagenericletterdenote… 相似文献
7.
Pogrebnyakov AV Redwing JM Raghavan S Vaithyanathan V Schlom DG Xu SY Li Q Tenne DA Soukiassian A Xi XX Johannes MD Kasinathan D Pickett WE Wu JS Spence JC 《Physical review letters》2004,93(14):147006
We report a systematic increase of the superconducting transition temperature T(c) with a biaxial tensile strain in MgB2 films to well beyond the bulk value. The tensile strain increases with the MgB2 film thickness, caused primarily by the coalescence of initially nucleated discrete islands (the Volmer-Weber growth mode.) The T(c) increase was observed in epitaxial films on SiC and sapphire substrates, although the T(c) values were different for the two substrates due to different lattice parameters and thermal expansion coefficients. We identified, by first-principles calculations, the underlying mechanism for the T(c) increase to be the softening of the bond-stretching E(2g) phonon mode, and we confirmed this conclusion by Raman scattering measurements. The result suggests that the E(2g) phonon softening is a possible avenue to achieve even higher T(c) in MgB2-related material systems. 相似文献
8.
Kourkoutis LF Hellberg CS Vaithyanathan V Li H Parker MK Andersen KE Schlom DG Muller DA 《Physical review letters》2008,100(3):036101
A phase-separation instability, resulting in the dewetting of thin SrTiO(3) films grown on Si(100) is shown by scanning transmission electron microscopy. Plan-view imaging of 1-nm thick, buried SrTiO(3) films was achieved by exploiting electron channeling through the substrate to focus the incident 0.2 nm beam down to a 0.04 nm diameter, revealing a nonuniform coverage by epitaxial SrTiO(3) islands and 2 x 1 Sr-covered regions. Density-functional calculations predict the ground state is a coexistence of 2 x 1 Sr-reconstructed Si and Sr-deficient SrTiO(3), in correspondence with the observed islanding. 相似文献
9.
D. G. Schlom D. Anselmetti J. G. Bednorz R. F. Broom A. Catana T. Frey Ch. Gerber H. -J. Güntherodt H. P. Lang J. Mannhart 《Zeitschrift für Physik B Condensed Matter》1992,86(2):163-175
By imaging the as-grown surfaces of sputtered and laserablated YBa2Cu3O7– films with scanning tunneling microscopy (STM), we have directly observed spiral-shaped growth terraces which emanate from screw dislocations. The density of screw dislocations was observed to decrease with increasing growth temperature and substrate misorientation. The surface structures observed by STM together with cross-sectional transmission electron microscope (TEM) images provide insights into the mechanisms of crystal growth operative during the formation of YBa2Cu3O7– films grown using these two widespread techniques. 相似文献
10.
K. Zhang M.R. Hao W. Guo T. Heeg D.G. Schlom W.Z. Shen X.Q. Pan 《Physica B: Condensed Matter》2012,407(14):2825-2828
Low temperature magneto-transport properties and electron dephasing mechanisms of phosphorus-doped ZnO thin films grown on (1 1 1) Si substrates with Lu2O3 buffer layers using pulsed laser deposition were investigated in detail by quantum interference and weak localization theories under magnetic fields up to 10 T. The dephasing length follows the temperature dependence with an index p≈1.6 at higher temperatures indicating electron–electron interaction, yet becomes saturated at lower temperatures. Consistent with photoluminescence measurements and the multi-band simulation of the electron concentration, such behavior was associated with the dislocation densities obtained from x-ray diffraction and mobility fittings, where charged edge dislocations acting as inelastic Coulomb scattering centers were affirmed responsible for electron dephasing. Owing to the temperature independence of the dislocation density, the phosphorus-doped ZnO film maintained a Hall mobility of 4.5 cm2 V−1 s−1 at 4 K. 相似文献