High-intensity near-field generation for silicon nanoparticle arrays with oblique irradiation for large-area high-throughput nanopatterning

We present near-field distributions around an isolated 800-nm silica or silicon nanoparticle, and nanoparticle arrays of 800-nm silica or silicon nanoparticles, on a silicon substrate by the finite-difference time-domain method when 800-nm light is irradiated obliquely to the substrate. Nanopatterning mediated with the nanoparticle system is promising for large-area, high-throughput patterning by using an enhanced localized near-field ablation by the nanoscattered light lens effect. The irradiation area cannot be extended for silica nanoparticles, because the optical field enhancement factor is low. Gold nanoparticles can generate highly enhanced near fields, although at present there are no useful ways to arrange the gold nanoparticles on the substrate at a high throughput. Silicon nanoparticles with high dielectric permittivity have optical characteristics of both silica and gold nanoparticles. The particle arrangement on the Si substrate is technically easy using a wet pulling process. From the calculation, high optical field intensity is acquired with oblique s-polarized irradiation to the substrate under silicon nanoparticle arrays, and the intensity is almost the same as that under gold nanoparticle arrays under the same condition. With this method, high-throughput nanopatterning for a large area would be achievable.     

Development of a high-power deep-ultraviolet continuous-wave coherent light source for laser cooling of silicon atoms

We developed a deep-UV single-mode coherent light source through two-stage highly efficient frequency conversions by use of external cavities. In the first stage, second-harmonic power of 500 mW was obtained by frequency doubling of a 746-nm Ti:sapphire laser with a conversion efficiency of 40%. In the second stage, 50-mW power at ~252nm was obtained by doubly resonant sum-frequency mixing of 373-nm light from the first-stage conversion and 780-nm light from a diode laser. The output performance of this deep-UV light source is sufficient for laser cooling of neutral silicon atoms.     

Efficient sum-frequency generation of continuous-wave single-frequency coherent light at 252 nm with dual wavelength enhancement

Highly efficient frequency conversions were conducted to obtain deep-ultraviolet single-mode coherent light by use of two-stage external cavities. A power of 154 mW at approximately 252 nm was obtained with a conversion efficiency of more than 8% by doubly resonant sum-frequency mixing of 373-nm light from the first-stage conversion and 780-nm light from a single-mode Ti:sapphire laser. The output performance of the deep-ultraviolet light source is sufficient for use in the laser cooling of neutral silicon atoms.     

Characteristics of ZnO epilayer on the post-annealed buffer layer on GaN/sapphire substrate by pulsed laser deposition

We employed epi-GaN substrates for ZnO film growth, and studied the deposition and post-annealing effects. ZnO films were grown by pulsed laser deposition (PLD) method. The as-grown films were annealed for one hour under atmospheric pressure air. ZnO morphologies after annealing were investigated and the post-annealed ZnO films grown at T _g =700^oC have very smooth surfaces and the rms with roughness is about 0.5 nm. Finally, ZnO post-annealed buffer layer was inserted between ZnO epilayer and GaN/sapphire substrates. It is confirmed by AFM that growth temperature of 700^oC helps the films grow in step-flow growth mode. It is observed by cathode luminescence spectrum that the ZnO film grown at 700^oC has very low visible luminescence, indicating the decrease of the deep level defects. It is also revealed by Hall measurements that carrier concentration is decreased by increasing the growth temperatures. It is suggested that low temperature buffer layer growth and post-annealing technique can be used to fabricate ZnO hetero-epitaxy.     

Multispectral hyperbolic incoherent holography

This paper presents a new method of multispectral hyperbolic incoherent holography in which a hyperbolic volume interferogram was directly measured by an appropriate designed interferometer. This method enables to obtain a set of spectral components of three-dimensional images and continuous spectra for spatially incoherent, polychromatic objects. We introduced a calibration method of a phase aberration of the interferometer. The spectral resolution and spatial resolutions are investigated based on analytical solution of impulse response function of hyperbolic holography. From experimental results and theoretical predictions, the validity of the calibration method was confirmed. Experimental results agree with the theoretical ones. Consequently, the retrieved images obtained by the method are shown to demonstrate the performance of the method.     

Sorption of ethanesulfonic acid by nylon-6 containing various numbers of end groups

From the analysis of the permeation of ³⁵S labeled ethanesulfonic acid, through nylon-6 films sorption isotherms were obtained. The films are characterized by their largely different content of carboxyl and amino end groups. It was found that the shape of the isotherm depends on the molar ratio of the two end groups: an S-shape curve for the film containing the carboxyl end group larger than the amino end group and a Langmuir-type curve for the film containing comparable numbers of end groups. These results were explained by the McGregor-Harris theory in which the acid dissociation constants of the two end groups in nylon were estimated experimentally.