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1.
Ion implantation of Mn ions into hole-doped GaP has been used to induce ferromagnetic behavior above room temperature for optimized Mn concentrations near 3 at. %. The magnetism is suppressed when the Mn dose is increased or decreased away from the 3 at. % value, or when n-type GaP substrates are used. At low temperatures the saturated moment is on the order of 1 Bohr magneton, and the spin wave stiffness inferred from the Bloch-law T(3/2) dependence of the magnetization provides an estimate T(c)=385 K of the Curie temperature that exceeds the experimental value, T(c)=270 K. The presence of ferromagnetic clusters and hysteresis to temperatures of at least 330 K is attributed to disorder and proximity to a metal-insulating transition.  相似文献   
2.
Two specifically 2H-labeled alkoxyethyl phosphodiester AZT derivatives 9 and 14 were synthesized. Pilot [2H]-solid-state nmr experiments on conjugate 14 demonstrated their usefulness in studying interactions with model or biological membranes.  相似文献   
3.
    
C−H functionalization at the α-position of heterocycles has become a rapidly growing area of research. Herein, a cheap and efficient photochemical method was developed for the C−H functionalization of heterocycles. Phenylglyoxylic acid (PhCOCOOH) could behave as an alternative to metal-based catalysts and organic dyes and provided a very general and wide array of photochemical C−H alkylation, alkenylation, and alkynylation, as well as C−N bond forming reaction methodologies. This novel, mild, and metal-free protocol was successfully employed in the functionalization of a wide range of C−H bonds, utilizing not only O- or N-heterocycles, but also the less studied S-heterocycles.  相似文献   
4.
Abstract

A simple statistical model of interacting non-rigid molecules, based on a perturbation expansion of the pair correlation function and the additivity of segmental interactions, is applied to the study of orientational order as measured by N.M.R. in the nematic and SA phases of 4-n-alkyl-4′-cyanobiphenyls (N-CB, N = 5 to 8), the nematic and SC phases of 4-n-alkyloxybenzoic acids (N-OBA, N = 7, 8) and the D h0 columnar discotic phase of hexa-alkyloxytriphenylenes (N-THE, N = 5 to 8). The order parameters of each homologous series are correctly described in terms of two isotropic and two anisotropic segmental coupling constants. The model predicts certain relations among coupling constants pertaining to different homogous series. These predictions are supported by the results obtained for the three types of compounds studied.  相似文献   
5.
A simple, sensitive and rapid ultra-performance liquid chromatography/positive electrospray ionization tandem mass spectrometry (UPLC/ESI-MS/MS) method has been developed and validated for the determination of lercanidipine in human plasma. Lercanidipine and the internal standard, nicardipine, were extracted from plasma by liquid-liquid extraction using tert-butyl methyl ether as the extraction solvent. UPLC analysis was performed isocratically on an AcQuity UPLC BEH C18 analytical column (2.1 x 50.0 mm i.d., particle size 1.7 microm). The mobile phase consisted of 70% acetonitrile in water containing 0.2% v/v formic acid and pumped at a flow rate of 0.30 mL/min. ESI in positive ion mode, with multiple reaction monitoring (MRM), was chosen for the detection of the analytes. The assay was linear over a concentration range of 0.05-30 ng/mL for lercanidipine with a limit of quantitation of 0.05 ng/mL. Quality control samples (0.05, 0.15, 15 and 25 ng/mL) in five replicates from five of analytical runs demonstrated intra-assay precision (% CV < or =7.3%), inter-assay precision (% CV < or =6.1%) and an overall accuracy (% relative error) of less than 6.2%. A run time of less than 1.0 min for each sample made it possible to analyze a large number of human plasma samples per day. The method can be used to quantify lercanidipine in human plasma covering a variety of pharmacokinetic or bioequivalence studies.  相似文献   
6.
A simple statistical model of interacting non-rigid molecules, based on a perturbation expansion of the pair correlation function and the additivity of segmental interactions, is applied to the study of orientational order as measured by N.M.R. in the nematic and SA phases of 4-n-alkyl-4'-cyanobiphenyls (N-CB, N = 5 to 8), the nematic and SC phases of 4-n-alkyloxybenzoic acids (N-OBA, N = 7, 8) and the Dh0 columnar discotic phase of hexa-alkyloxytriphenylenes (N-THE, N = 5 to 8). The order parameters of each homologous series are correctly described in terms of two isotropic and two anisotropic segmental coupling constants. The model predicts certain relations among coupling constants pertaining to different homogous series. These predictions are supported by the results obtained for the three types of compounds studied.  相似文献   
7.
    
Results on the synthesis of ferromagnetic GaMnN and GaMnP by both Molecular Beam Epitaxy or implantation of Mn directly into p‐GaN or GaP(C) at elevated temperatures to avoid amorphization will be described. There is a relatively broad range of growth conditions under which single‐crystal, single‐phase material may be obtained with significant Mn concentrations. The effects of background doping level are discussed, along with a comparison of results on direct implantation of Fe and Ni instead of Mn. Essential requirements for utilizing the spin of the electron in device structures include the ability to achieve efficient electrical spin injection and transport of spin‐polarized carriers, along with effective detection of these carriers.  相似文献   
8.
The electrical properties of thin porous alumina films in the form of MOS structures were studied with dielectric spectroscopy at room temperature. The thickness of the samples was found to be approximately 95 nm with a cross section area of 1.6×10−3 cm2.C-V andG-V measurements were performed by applying a loop sweep voltage 2.0 V to −5.0 V. Correction to the measurements were performed by considering a series resistanceR S and leakage currentI DC. TheC-V results show hysteresis effects due to the presence of positive charges in porous alumina. These charges may be are attributed to the residual electrolyte during the anodization process in the sample preparation. Three distinct regions in theC-V results are observed, namely the inversion, the depletion and the accumulation regions. In the voltage region, where depletion of carriers is observed,C-f andG-f measurements were recorded in the frequency range 1 Hz to 106 Hz. The conductance method was applied for the calculation of the density Dit of carriers, trapped in the interface between insulator and semiconductor, and of the response time τit as a function of the applied bias voltage were performed. The values obtained for Dit and τit are of the order of 3×1012 eV−1 cm−2 and 10−3 s, respectively, and they are voltage dependent. Paper presented at the Patras Conference on Solid State Ionics — Transport Properties, Patras, Greece, Sept. 14 – 18, 2004.  相似文献   
9.
    
AC impendance spectroscopy measurements as a function of the applied voltage in the range 0.5 V up to 3 V, as well as measurements of the transient current of porous silicon thin films as function of the applied voltage in the range 1V up to 9 V were performed in order to investigate the conduction mechanisms in PS. The analysis of the experimental results shows that within the range of the frequency span and time range the conductivity is attributed to ions in the early stages (up to 10–3s) of the applied voltage. The voltage dependence of the ionic conductivity is ohmic. The Poole–Frenkel conduction mechanism prevails following the establishment of high internal electric fields, which occur for times greater than 10–3s after the application of the voltage.  相似文献   
10.
    
The structural and magnetic properties of p‐GaN implanted with high doses of Mn+ or Fe% (0.1–5 at%) and subsequently annealed at 700–1000 °C were examined by transmission electron microscopy, selected‐area diffraction patterns, X‐ray diffraction and SQUID magnetometry. The implanted samples showed paramagnetic behavior on a large diamagnetic background signal for implantation doses below 3 at% Mn or Fe. At higher doses the samples showed signatures of ferromagnetism with Curie temperatures <250 K for Mn and <150 K for Fe implantation. The structural analysis of the Mn‐implanted GaN showed regions consistent with the formation of GaxMn1—xN platelets occupying ∼5% of the implanted volume. An estimate of ∼(5.5 ± 1.9)μB per Mn was obtained, consistent with the expected value (5.0) for a half‐filled shell. The formation of secondary phases such as MnxGay or MnxNy was excluded by careful diffraction analysis. The implantation process may have application in forming selected‐area contact regions for spin‐polarized carrier injection in device structures and in enabling a quick determination of the Curie temperatures in dilute magnetic semiconductor host materials.  相似文献   
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