A study of polarized low-frequency spectra of the solid solution of paradibromobenzene with parachloronitrobenzene in the α phase

Polarized spectra of low-frequency Raman scattering in solid solutions of paradibromobenzene with parachloronitrobenzene in the α phase are studied at temperatures of 293 and 77 K. The solid solution spectrum is found to be similar to the paradibromobenzene spectrum (in accordance with the X-ray diffraction data), but has a series of additional low-intensity lines resulting from disordering. As the parachloronitrobenzene concentration increases, frequencies of the solid solution orientation vibrations decrease steadily, and the half-widths grow. Frequency spectra of the mixed crystal are calculated by the Dean method.     

Metal complexes of 2-hetarylindandiones-1,3

The chelate and molecular complexes of 2-(2-benzazolyl, perimidyl)-indandiones-1,3 were synthesized for the first time. The structures of the ligands (tautomeric forms) and complex compounds were determined from the X-ray diffraction, ¹H, ¹³C NMR, and IR data and the quantum-chemical calculations (RHF SCF in 6-31 G** basis).     

Electronic structure and properties of high-T c superconducting cuprates in the normal and superconducting phases within the LDA + GTB approach

Theoretical investigations of the properties of high-T _c superconducting cuprates within the LDA + GTB method taking into account the magnetic and phonon pairing mechanisms have been reviewed. These properties are the concentration-dependent electronic structure, quantum phase transitions with a change in the topology of the Fermi surface, and the superconducting phase of the $d_{x^2 - y^2 }$ symmetry.     

Kinetics of self-interstitials reactions in p-type silicon irradiated with alpha particles

New findings on the self-interstitial migration in p-type silicon are presented. They are based on experimental studies of the formation kinetics of defects related to interstitial carbon after irradiation with alpha particles. The main parameters characterizing the interaction rate of silicon self-interstitials with substitutional carbon atoms have been determined. A preliminary interpretation of the experimental data is given. The interpretation takes into account different diffusivities of self-interstitials in their singly and doubly ionized states.     

Ion implantation into metals simultaneously irradiated by electrons

It has been revealed that concomitant irradiation by 1-keV electrons changes the depth distributions of the N and C atoms implanted with the energies of 10 and 30 keV in nickel and stainless steel samples. Instead of a single peak, the distribution has two peaks; one peak is closer to the surface and the other is located deeper than that in the absence of electron irradiation. The electron radiation effect is attributed to the formation of a band above the Fermi level in the atomic system whereto the metal electrons are transferred due to the electron bombardment excitation. The electrons in this band have a quite long lifetime and increase the mobility of impurity atoms.     

Analog of Kelvin-Helmholtz instability on a free surface of a superfluid liquid

We analyze the analog of the Kelvin-Helmholtz instability on the free surface of a superfluid liquid. This instability is induced by the relative motion of superfluid and normal components of the same liquid along the surface. The instability threshold is found to be independent of the value of viscosity, but turns out to be lower than in the absence of dissipation. The result is similar to that obtained for the interface between two sliding super-fluids (with different mechanisms of dissipation) and confirmed by the first experimental observation of the Kelvin-Helmholtz instability on the interface between ³He-A and ³He-B by Blaauwgeers et al. (cond-mat/0111343).     

Photoluminescence of gallium arsenide electron-irradiated at 20 K

The processes of defect formation in single crystals of gallium arsenide electron-irradiated at cryogenic temperatures (∼20 K) have been investigated by the luminescence method. It is shown that at such temperatures the primary radiation-induced defects, in particular, intrinsic interstitial atoms, can migrate in a crystal and form complexes with their participation. Institute of Solid-State and Semiconductor Physics of the Academy of Sciences of Belarus, 17, P. Brovka St., Minsk, 220072, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 1, pp. 122–124, January–February, 1997.     

Subthreshold sputtering at high temperatures

The sputtering of tungsten from a target at a temperature of 1470 K during irradiation by 5-eV deuterium ions in a steady-state dense plasma is discovered. The literature values of the threshold for the sputtering of tungsten by deuterium ions are 160–200 eV. The tungsten sputtering coefficient measured by the loss of weight is found to be 1.5×10^?4 atom/ion at a deuterium ion energy of 5 eV. Previously, such a sputtering coefficient was usually observed at energies of 250 eV. The sputtering is accompanied by a change in the target surface relief, i.e., by the etching of the grain boundaries and the formation of a wavy structure on the tungsten surface. The subthreshold sputtering at a high temperature is explained by the possible sputtering of adsorbed tungsten atoms that are released from the traps around the interstitial atoms and come to the target surface from the space between the grains. The wavy structure on the surface results from the merging of adsorbed atoms into ordered clusters.