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Dzhun I. O. Babaitsev G. V. Kozin M. G. Romashkina I. L. Shanova E. I. Chechenin N. G. 《Physics of the Solid State》2021,63(6):825-831
Physics of the Solid State - The external factors which influence the ferromagnetic resonance (FMR) line width in bilayer (ferromagnet/antiferromagnet) exchange-biased systems are studied. The... 相似文献
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P. A. Perminov I. O. Dzhun A. A. Ezhov S. V. Zabotnov L. A. Golovan’ V. I. Panov P. K. Kashkarov 《Bulletin of the Russian Academy of Sciences: Physics》2010,74(1):93-95
The possibility to produce silicon nanoparticles by the method of the pulse laser ablation of monocrystaline silicon targets
in the water, glycerol and liquid nitrogen have been shown. Studies by the atomic-force microscopy and Raman scattering methods
revealed the nanoparticles have a crystalline structure and their mean size depends on the buffer liquid composition. 相似文献
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Perminov P. A. Dzhun I. O. Ezhov A. A. Zabotnov S. V. Golovan L. A. Ivlev G. D. Gatskevich E. I. Malevich V. L. Kashkarov P. K. 《Laser Physics》2011,21(4):801-804
The method for the formation of silicon nanoparticles by picosecond laser pulses is studied upon the surface irradiation of
the single-crystal silicon in various liquids. The ablation products are investigated using the atomic-force microscopy and
Raman spectroscopy. The experimental results indicate the crystal-line structure of nanoparticles and the dependence of their
size on the ablation medium. 相似文献
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Khomenko E. V. Chechenin N. G. Dzhun’ I. O. Perov N. S. Samsonova V. V. Go?khman A. Yu. Zenkevich A. V. 《Physics of the Solid State》2010,52(8):1701-1708
The preparation conditions and the magnitudes of the uniaxial and unidirectional magnetic anisotropies of IrMn/Co structures
with an alternative sequence of deposition of antiferromagnetic and ferromagnetic layers upon heat treatment and cooling in
an external magnetic field have been investigated. It has been revealed that the unidirectional anisotropy (exchange bias)
arises in the structure with an antiferromagnetic layer deposited on a ferromagnetic layer (TS structure) at an annealing
temperature of higher than 100°C. In structures with a ferromagnetic layer deposited on an antiferromagnetic layer (BS structure),
the exchange bias does not arise in the annealing temperature range under investigation. The possible factors responsible
for this effect and the ratio between the temperature of the appearance of the exchange bias and the Néel temperature have
been discussed. 相似文献
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