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1.
We report on the measurements of the quantum Hall effect states in double quantum well structures at the filling factors nu=4N+1 and nu=4N+3, where N is the Landau index number, in the presence of the in-plane magnetic field. The quantum Hall states at these filling factors vanish and reappear several times and exhibit anisotropy. Repeated reentrance of the transport gap occurs due to the periodic vanishing of the tunneling amplitude in the presence of the in-plane field. Anisotropy demonstrates the existence of the stripes in the ground states. 相似文献
2.
Drichko I. L. Smirnov I. Yu. Bakarov A. K. Bykov A. A. Dmitriev A. A. Galperin Yu. M. 《JETP Letters》2020,112(1):45-52
JETP Letters - The DC and AC conductivities of the n-GaAs/AlAs heterostructure with two filled size quantization levels are studied within a wide magnetic field range. The electron spectrum of such... 相似文献
3.
The photoresponse of magnetoresistance of a high-density two-dimensional electron system to microwave electromagnetic radiation is studied. The damping of the Shubnikov-de Haas oscillation by radiation with a non-monotonic dependence of this effect on the magnetic field and the radiation-induced oscillations of magnetoresistance are observed. The damping is most pronounced within isolated narrow magnetic field intervals that closely correspond to the expected positions of magnetoplasma resonances in the sample under study and also near the cyclotron resonance position. A “window” is observed in the photoresponse near the field value predicted on the basis of a single-particle electron spectrum consisting of broadened Landau levels. The radiation-induced oscillations, the window in the photoresponse, and the damping of the Shubnikov-de Haas oscillations near the cyclotron resonance are described in terms of the theory based on the concept of the nonequilibrium filling of single-electron states. Thus, it is demonstrated that the photoresponse pattern observed in the experiment is formed by both single-particle and collective (magnetoplasma) effects. 相似文献
4.
We discuss the rate of relaxation of the total spin in a two-electron droplet in the vicinity of the magnetic-field-driven singlet-triplet transition. The total spin relaxation is attributed to spin-orbit and electron-phonon interactions. The relaxation process is found to depend on the spin of ground and excited states. This asymmetry is used to explain puzzles in recent high source-drain transport experiments. 相似文献
5.
A. A. Bykov I. V. Marchishin A. K. Bakarov Jing-Qiao Zhang S. A. Vitkalov 《JETP Letters》2007,85(1):63-66
The effect of dc current I dc on the electron transport in a GaAs quantum well with AlAs/GaAs superlattice barriers is studied experimentally at a temperature of 4.2 K in magnetic fields up to 2 T. A sharp increase in resistance R xx is observed in magnetic fields higher than the critical field B c. The value of B c is found to decrease with increasing the current I dc. The phenomenon observed in the experiment is qualitatively explained by the electric breakdown of superlattice barriers under the action of the Hall field. 相似文献
6.
The effect of a microwave field in the frequency range from 54 to 140 GHz on the magnetotransport in a GaAs quantum well with AlAs/GaAs superlattice barriers and with an electron mobility no higher than 106 cm2/V s is investigated. In the given two-dimensional system under the effect of microwave radiation, giant resistance oscillations are observed with their positions in the magnetic field being determined by the ratio of the radiation frequency to the cyclotron frequency. Earlier, such oscillations had only been observed in GaAs/AlGaAs heterostructures with much higher mobilities. When the samples under study are irradiated with a 140-GHz microwave field, the resistance corresponding to the main oscillation minimum, which occurs near the cyclotron resonance, appears to be close to zero. The results of the study suggest that a mobility value lower than 106 cm2/V s does not prevent the formation of zero-resistance states in a magnetic field in a two-dimensional system under the effect of microwave radiation. 相似文献
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8.
The effect of microwave radiation in the frequency range from 1.2 to 10 GHz on the magnetoresistance of a high-mobility two-dimensional electron gas has been studied in a GaAs quantum well with AlAs/GaAs superlattice barriers. It has been found that the microwave field induces oscillations of this magnetoresistance, which are periodic in the reciprocal magnetic field (1/B). It has been shown that the period of these oscillations in the frequency range under study depends on the microwave radiation power. 相似文献
9.
A.A. Bykov A.K. Bakarov A.K. Kalagin A.V. Goran A.I. Toropov S.A. Vitkalov 《Physica E: Low-dimensional Systems and Nanostructures》2006,34(1-2):97
The effect of microwave radiation in the frequency range from 1.2 to 10 GHz on the magnetoresistance of a high-mobility two-dimensional electron gas has been studied in a GaAs quantum well with AlAs/GaAs superlattice barriers. It has been found that the microwave field induces magnetoresistance oscillations periodic in the reciprocal magnetic field (1/B). It has been shown that the period of these oscillations in the covered frequency range depends on the microwave radiation power. 相似文献
10.
The effect of the measuring current Idc on the magnetoresistance (MR) of a high-mobility two-dimensional electron gas (2DEG) in a GaAs quantum well with AlAs/GaAs superlattice barriers has been studied. It has been found that, as Idc increases, the MR of the 2DEG in the studied structures becomes negative in the range of classically strong magnetic fields. It has been shown that the observed negative MR is due to the transport of the 2DEG in the nonlinear regime. 相似文献