Determination of the carrier concentration in doped <Emphasis Type="Italic">n</Emphasis>-GaAs layers by Raman and light reflection spectroscopies

The carrier concentrations in Si-doped n-GaAs films have been determined by Raman and light reflection spectroscopies. The data obtained are in good agreement with the results of Hall measurements. It is shown that the light reflection and Raman spectroscopies supplement each other in determination of carrier concentrations in the range 10¹⁷?10¹⁹ cm^?3.     

Photoreflectance study of plasma-etched semi-insulating GaAs substrates treated

Semi-insulating GaAs(100) substrates subjected to ion plasma etching in different regimes have been investigated by photoreflectance spectroscopy. The photoreflectance spectra of the processed samples exhibit Franz-Keldysh oscillations, which indicate a decrease in the defect density in the surface region. On the basis of the experimental data and the results of simulation of the photoreflectance spectra, optimal regimes of sample etching have been found.     

Investigation of mechanical strains in porous silicon by difference Raman spectroscopy

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 49, No. 4, pp. 612–615, October, 1988.     

Study of the effects of size quantization in coupled AlxGa1? x As/GaAs/Alx Ga1? x as quantum wells by means of photoreflectance spectroscopy

Photoreflectance spectra are measured in heterostructures with coupled quantum wells at room temperature. The energies of the optical transitions are determined, and their variation with the well width and barrier thickness is studied. The experimental results are compared with the theoretically calculated electron-hole transition energies. Good agreement is obtained for narrow wells. __________ Translated from Optika i Spektroskopiya, Vol. 93, No. 6, 2002, pp. 929–934. Original Russian Text Copyright ? 2002 by Avakyants, Bokov, Galiev, Kaminskiĭ, Kul’bachinskiĭ, Mokerov, Chervyakov.     

Study of a Nonequilibrium Auger-Transition Using Emission Auger Spectroscopy

Journal of Applied Spectroscopy - A nonequilibrium Auger transition consisting of a vacancy in the valence layer being filled within ~10–14 s by a probe electron that receives the energy...     

Photoreflectance Spectroscopy of Porous Silicon Photonic Crystals

Journal of Russian Laser Research - We study one-dimensional porous silicon photonic crystals by photoreflectance (PR) spectroscopy. We calculate the reflectance and PR spectra by transfer matrix...     

Ordering of the structure of hydrogenated silicon films under the influence of laser radiation

A study is reported of the crystallization of amorphous hydrogenated silicon films under the influence continuous radiation from an argon laser. The structure was investigated by Raman scattering of light. The radiation power density during the annealing process was 1.5–4.5 kW/cm² and the exposure was 1/125 sec. The Raman spectra were recorded for power densities below 0.1 kW/cm². The power density threshold for the appearance of crystallites was found to be 3.0 kW/cm². The phonon localization model was used to show that the size of the crystallites produced for power densities of 3 kW/cm² was 40 Å.     

Piezoelectric Relaxation of Two-Dimensional Electron Gas in Heterostructures with InGaN/GaN Quantum Wells

Russian Physics Journal - The article is devoted to the study of the mechanism of piezoelectric scattering of charge carriers in InGaN/AlGaN/GaN heterostructures with one filled size quantization...