排序方式: 共有2条查询结果,搜索用时 15 毫秒
1
1.
2.
Jean-Philippe Tourrenc Sophie Bouchoule Aghiad Khadour Jean-Christophe Harmand Audrey Miard Jean Decobert Nadine Lagay Xavier Lafosse Isabelle Sagnes Laetitia Leroy Jean-Louis Oudar 《Optical and Quantum Electronics》2008,40(2-4):155-165
We report on the thermal design and the characterization of InP-based 1.55 μm wavelength large diameter (~100 μm) optically pumped vertical external cavity surface emitting lasers (OP-VECSELs). The device is thermally optimized for high power ( > 70 mW) room-temperature (RT) continuous-wave (CW) single-mode operation. Efficient bottom heat dissipation in the 1/2-VCSEL chip is obtained thanks to the use of a hybrid metal– metamorphic GaAs/AlAs mirror integrated to the InP-based active region, and to subsequent soldering on a SiC substrate. A single-mode output power of 77mW is obtained under CW-RT laser operation, limited by the pump power. Moreover thermal simulations and characterizations of the 1/2-VCSEL chip show that even higher power could be obtained at higher pumping levels, using a CVD diamond substrate. 相似文献
1