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基于阵列波导光栅的光子集成解调技术是硅光领域的研究热点和难点.相比传统解调方法,基于阵列波导光栅的光子集成解调技术因其解调精度高、解调速度快、封装体积小等优势,在光纤布拉格光栅的高速、高精度解调上具有明显优势.近年来,随着光子集成技术的发展,各科研院所和相关机构对阵列波导光栅的光子集成解调法进行了广泛深入的研究与优化.本文通过介绍阵列波导光栅工作原理及基于阵列波导光栅的光纤布拉格光栅波长解调原理,结合基于阵列波导光栅的光纤布拉格光栅解调仪在材料体系和系统性能两个方面的重要进展,归纳了基于阵列波导光栅的解调仪的典型应用场景,从新材料、系统集成和规模化三方面对光纤布拉格光栅解调系统的未来发展提出针对性建议,为基于阵列波导光栅的光子集成解调技术的研究发展提供参考. 相似文献
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Interface effect on superlattice quality and optical properties of InAs/GaSb type-II superlattices grown by molecular beam epitaxy 下载免费PDF全文
Zhaojun Liu 《中国物理 B》2022,31(12):128503-128503
We systematically investigate the influence of InSb interface (IF) engineering on the crystal quality and optical properties of strain-balanced InAs/GaSb type-II superlattices (T2SLs). The type-II superlattice structure is 120 periods InAs (8 ML)/GaSb (6 ML) with different thicknesses of InSb interface grown by molecular beam epitaxy (MBE). The high-resolution x-ray diffraction (XRD) curves display sharp satellite peaks, and the narrow full width at half maximum (FWHM) of the 0th is only 30-39 arcsec. From high-resolution cross-sectional transmission electron microscopy (HRTEM) characterization, the InSb heterointerfaces and the clear spatial separation between the InAs and GaSb layers can be more intuitively distinguished. As the InSb interface thickness increases, the compressive strain increases, and the surface "bright spots" appear to be more apparent from the atomic force microscopy (AFM) results. Also, photoluminescence (PL) measurements verify that, with the increase in the strain, the bandgap of the superlattice narrows. By optimizing the InSb interface, a high-quality crystal with a well-defined surface and interface is obtained with a PL wavelength of 4.78 μ, which can be used for mid-wave infrared (MWIR) detection. 相似文献
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