241Am-Be中子参考辐射的蒙特卡罗模拟研究

研究用于校准场所中子剂量监测仪表的241Am-Be中子参考辐射场计量特性。采用蒙特卡罗方法模拟了空气自由中子参考辐射(FRNR),GB/T 14055规定的最小尺寸中子参考辐射(SRNR)和实际中子参考辐射(ARNR)中不同检验点处中子周围剂量当量率、散射中子占比和能谱分布特征。研究结果表明,空气对FRNR中的剂量率和能谱分布影响小,近似为理想中子参考辐射;采用5%含硼聚乙烯作屏蔽的最小尺寸SRNR可减少热中子,降低散射中子占比,影锥法不适用于小尺寸中子参考辐射中对散射中子的修正;ARNR中的散射中子更少、占比更低,影锥法所得散射中子占比与理论值基本一致。     

高分辨电子显微学的拓荒者——缅怀李方华先生

2020年的春节格外沉重。突如其来的新冠病毒疫情威胁,导致我们关停了实验室,停止了大部分的正常工作。就在这个除夕夜我们悲痛地失去了一位良师益友、杰出的晶体物理学家——李方华先生。李先生在电子衍射和电子显微图像处理领域深耕数十年,是中国单晶体电子衍射结构分析的开创者、建立和发展高分辨电子显微学的代表人物。     

Overview of finite elements simulation of temperature profile to estimate properties of materials 3D-printed by laser powder-bed fusion

Laser powder bed fusion(LPBF),like many other additive manufacturing techniques,offers flexibility in design expected to become a disruption to the manufacturing industry.The current cost of LPBF process does not favor a try-anderror way of research,which makes modelling and simulation a field of superior importance in that area of engineering.In this work,various methods used to overcome challenges in modeling at different levels of approximation of LPBF process are reviewed.Recent efforts made towards a reliable and computationally effective model to simulate LPBF process using finite element(FE)codes are presented.A combination of ray-tracing technique,the solution of the radiation transfer equation and absorption measurements has been used to establish an analytical equation,which gives a more accurate approximation of laser energy deposition in powder-substrate configuration.When this new analytical energy deposition model is used in in FE simulation,with other physics carefully set,it enables us to get reliable cooling curves and melt track morphology that agree well with experimental observations.The use of more computationally effective approximation,without explicit topological changes,allows to simulate wider geometries and longer scanning time leading to many applications in real engineering world.Different applications are herein presented including:prediction of printing quality through the simulated overlapping of consecutive melt tracks,simulation of LPBF of a mixture of materials and estimation of martensite inclusion in printed steel.     

铅测定中的二条谱线对比

本文介绍了对铅的二条灵敏谱线进行的实验对比,结果证明２１７．０ｎｍ谱线的灵敏度增加一倍以上,其他指标也接近２８３．３ｎｍ谱线,可以用于卫生检测。     

微形大孔径鱼眼车载镜头光学设计

将典型反远摄镜头设计方法与PWC法相结合,从理论模型出发搭建初始结构,借助光学设计软件ZEMAX辅助设计。得到一款工作波段436 nm、486 nm、546 nm、587 nm、656nm,F#1.5,全视场角160°,光学总长18.5 mm,可应用于车载后视系统的镜头,比市场上现有产品指标有明显提升,镜头高低温性能稳定、公差合理。结果表明将反远摄理想模型、PWC法及实际需求结合,设计效果好,镜头性价比高、性能优异,为相关领域的镜头设计提供有益借鉴。     

纳米二氧化钒薄膜的电学与光学相变特性

采用双离子束溅射氧化钒薄膜附加热处理的方式制备了纳米二氧化钒薄膜。在热驱动方式下,分别利用四探针测试技术和傅里叶变换红外光谱技术对纳米二氧化钒薄膜的电学与光学半导体-金属相变特性进行了测试与分析。实验结果表明,电学相变特性与光学相变特性之间存在明显的偏差,电学相变温度为63 ℃,高于光学相变温度,60 ℃;电学相变持续的温度宽度较光学相变持续温度宽度宽;在红外光波段,随着波长的增加,纳米二氧化钒薄膜的光学相变温度逐渐增大,由半导体相向金属相转变的初始温度逐渐升高,相变持续的温度宽度变窄。在红外光波段,纳米二氧化钒薄膜的光学相变特性可以通过光波波长进行调控,电学相变特性更适合表征纳米VO₂薄膜的半导体-金属相变特性。     

Enhanced Photoluminescence of InGaN/GaN Green Light-Emitting Diodes Grown on Patterned Sapphire Substrate

Green InGaN/GaN based light-emitting diodes （LEDs） are fabricated both on planar and wet-etched patterned sapphire substrates by metalorganic vapour phase epitaxy （MOVPE）. Their photoluminescence （PL） properties of the two samples are studied. The results indicate that the PL integral intensity of the green LED on the patterned substrate is nearly two times of that on the planar one within the whole measured temperature range. The enhanced PL intensity in the green LED on the patterned substrate is shown completely contributed from the extraction efficiency, but not from the internal quantum efficiency. The conclusion is supported by temperature-dependent PL analysis on the two samples, and the mechanisms axe discussed.     

气源MBE外延自组装GeSi量子点光致荧光研究

利用气源分子束外延设备（MBE）制作了GeSi自组装量子点样品。利用原子力显微镜（AFM）和光致荧光（PL）光谱研究了量子点的形貌和光学性质。气源MBE在较低温度下生长的量子点材料具有较高的量子点覆盖度。200K以下载流子以局域激子形式束缚在量子点中,激子束缚能约为17meV。升温至200K,载流子的输运过程发生变化。对量子点PL积分强度与温度关系曲线进行拟合得到量子点中空穴跃迁至浸润层的热激活能为129meV。     

气源MBE外延自组装GeSi量子点的光致荧光

利用气源分子束外延技术(MBE)制作了GeSi自组装量子点样品.利用原子力显微镜(AFM)和光致荧光(PL)光谱研究了该量子点的形貌和光学性质.气源MBE在较低温度下生长的量子点材料具有较高的量子点覆盖度.200K以下载流子以局域激子形式束缚在量子点中,激子束缚能约为17 meV.升温至200 K,载流子的输运过程发生...