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Evaluation of negative bias temperature instability in ultra-thin gate oxide pMOSFETs using a new on-line PDO method 下载免费PDF全文
A new on-line methodology is used to characterize the negative bias temperature
instability (NBTI) without inherent recovery. Saturation drain voltage shift and
mobility shift are extracted by ID-VD characterizations, which were
measured before stress, and after every certain stress phase, using the
proportional differential operator (PDO) method. The new on-line methodology avoids
the mobility linearity assumption as compared with the previous on-the-fly method.
It is found that both reaction--diffusion and charge-injection processes are
important in NBTI effect under either DC or AC stress. A similar activation energy,
0.15 eV, occurred in both DC and AC NBTI processes. Also degradation rate factor is
independent of temperature below 90\du\ and sharply increases above it. The
frequency dependence of NBTI degradation shows that NBTI degradation is independent
of frequencies. The carrier tunnelling and reaction--diffusion mechanisms exist
simultaneously in NBTI degradation of sub-micron pMOSFETs, and the carrier
tunnelling dominates the earlier NBTI stage and the reaction--diffusion mechanism
follows when the generation rate of traps caused by carrier tunnelling reaches its
maximum. 相似文献
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