Improved photovoltaic effects in Mn-doped BiFeO_3 ferroelectric thin films through band gap engineering

As a low-bandgap ferroelectric material, BiFeO_3 has gained wide attention for the potential photovoltaic applications,since its photovoltaic effect in visible light range was reported in 2009. In the present work, Bi(Fe, Mn)O_3thin films are fabricated by pulsed laser deposition method, and the effects of Mn doping on the microstructure, optical, leakage,ferroelectric and photovoltaic characteristics of Bi(Fe, Mn)O_3 thin films are systematically investigated. The x-ray diffraction data indicate that Bi(Fe, Mn)O_3 thin films each have a rhombohedrally distorted perovskite structure. From the light absorption results, it follows that the band gap of Bi(Fe, Mn)O_3 thin films can be tuned by doping different amounts of Mn content. More importantly, photovoltaic measurement demonstrates that the short-circuit photocurrent density and the open-circuit voltage can both be remarkably improved through doping an appropriate amount of Mn content, leading to the fascinating fact that the maximum power output of ITO/BiFe_(0.7)Mn_(0.3)O_3/Nb-STO capacitor is about 175 times higher than that of ITO/BiFeO_3/Nb-STO capacitor. The improvement of photovoltaic response in Bi(Fe, Mn)O_3 thin film can be reasonably explained as being due to absorbing more visible light through bandgap engineering and maintaining the ferroelectric property at the same time.     

壁面效应对剪切稀化流体内气泡上浮特性的影响

数值研究了壁面效应对剪切稀化流体内气泡上浮运动特性的影响,气液两相的界面捕捉采用流体体积(VOF)法,剪切稀化流体流变特性和气液相间表面张力的计算分别采用Carreau模型和连续表面张力模型.详细研究了不同流变指数下,壁面效应对气泡形状、液相流场和气泡终端速度的影响.结果表明,强的壁面效应或弱的剪切稀化程度会限制气泡的变形和尾涡的形成,使气泡的终端速度减小;气泡终端速度最易受壁面效应的影响;强的壁面效应和强的剪切稀化程度会导致高剪切速率区域出现在壁面附近,引起壁面附近液相表观黏度大幅度的下降.