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Effect of Dopant Concentration in a Base Layer on Photocurrent——Voltage Characteristics of Photovoltaic Power Converters 下载免费PDF全文
It is known that the p–n junction of an absorption region is a crucial part for power conversion efficiency of photovoltaic power converters. We fabricate four samples with different dopant concentrations in base layers.The dependences of power conversion efficiency and fill factor on input power are displayed by photocurrent–voltage measurement. Photoluminescence characteristics under open circuit and connected circuit conditions are also studied. It is found that the status of p–n junction mat... 相似文献
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江洋 《浙江大学学报(理学版)》2020,47(2):218-222
基于中美合作项目INDEPTH第3期在青藏高原布设的台站,使用虚拟震源测深法研究青藏高原中部的地壳厚度。结果显示,拉萨地体和羌塘地体的地壳结构存在巨大差异。拉萨地体的地壳厚度大约为57 km,与艾里均衡说预测的地壳厚度基本一致,说明拉萨地体的地壳结构比较简单。羌塘地体的地壳厚度为60~75 km,向北有增厚趋势,明显较艾里均衡说预测的地壳厚,说明羌塘地体地壳结构比较复杂,原因有可能是羌塘地体下存在高温流体和低速带,或者与印度板块岩石圈在班公湖-怒江缝合带以北向下俯冲有关。 相似文献
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采用量子化学计算研究了磷酰化氨基酸的反应性质,包括N-磷酰氨基酸成肽反应、成酯反应、磷上酯交换反应和磷上的N→O迁移反应的机理以及计算模型和计算方法的选择,并从理论上解释了自然界选择α-氨基酸而不是β,γ-氨基酸的实验事实. 相似文献
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According to the well-established light-to-electricity conversion theory,resonant excited carriers in the quantum dots will relax to the ground states and cannot escape from the quantum dots to form photocurrent,which have been observed in quantum dots without a p–n junction at an external bias.Here,we experimentally observed more than 88% of the resonantly excited photo carriers escaping from In As quantum dots embedded in a short-circuited p–n junction to form photocurrent.The phenomenon cannot be explained by thermionic emission,tunneling process,and intermediate-band theories.A new mechanism is suggested that the photo carriers escape directly from the quantum dots to form photocurrent rather than relax to the ground state of quantum dots induced by a p–n junction.The finding is important for understanding the low-dimensional semiconductor physics and applications in solar cells and photodiode detectors. 相似文献
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GaN Films Grown on Si (111) Substrates Using a Composite Buffer with Low Temperature A1N Interlayer 下载免费PDF全文
A GaN interlayer between low temperature (LT) A1N and high temperature (PIT) A1N is introduced to combine HT AIN, LT A1N and composition-graded A1GaN as a novel buffer layer for GaN films grown on Si (111) substrates. The crystal quality, surface morphology and strain state of the GaN film with this new buffer are compared with those of GaN grown on a conventional buffer structure. By changing the thickness of LT A1N, the crystal quality is optimized and the crack-free GaN film is obtained. The in-plane strain in the GaN film can be changed from tensile to compressive strain with the increase in LT A1N thickness. 相似文献
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基于有孔探针SNOM的近场拉曼光谱和成像技术的出现使得拉曼光谱的分辨率突破了光学衍射极限,从而提供了一个有力的工具对样品亚波长尺度之下的化学信息进行表征。文章讨论了探针性质对实现近场拉曼光谱的影响,并全面地介绍了有孔探针近场拉曼光谱发展十余年来在纳米尺度化学分辨成像、液-液界面性质研究、微观层面解释SERS增强机理、图像化反映SERS热点分布等诸多领域的研究进展。 相似文献
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利用金属有机气相外延方法研究了非故意掺杂GaN薄膜的方块电阻与高温GaN体材料生长时载气中N2比例的关系.研究发现,随着载气中N2比例的增加,GaN薄膜方块电阻急剧增加.当载气中N2比例为50%时,GaN薄膜方块电阻达1.1×108Ω/□,且GaN表面平整,均方根粗糙度为0.233nm.二次离子质谱分析发现,载气中N2比例不同的样品中碳、氧杂质含量无明显差别.随着载气中N2比
关键词:
半绝缘GaN薄膜
载气
金属有机气相外延
位错 相似文献
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研究了不同浓度的F- 和Ce3 +对磷酸三钙 (Ca3 (PO4) 2 ,TCP)的水解过程和水解产物的影响。XRD及IR实验结果表明 ,TCP在NaF溶液中的水解产物为羟基磷灰石 (Ca1 0 (PO4) 6(OH) 2 ,HAP)和氟基磷灰石 (Ca1 0 (PO4) 6F2 ,FAP)的混合物。氟离子浓度越高 ,FAP的含量越多。TCP水解过程的pH值变化随氟离子的起始浓度不同而不同。氟离子浓度越高 ,pH值越低。TCP在CeCl3 溶液中的水解产物为铈取代的羟基磷灰石 (CexCa1 0 -y(PO4) 6-z(OH) 2 ,Ce HAP)。溶解实验表明 ,氟处理比铈处理更有效地增强了TCP水解产物的抗酸性。当F -浓度为 0 1%或Ce3 +浓度为 5× 10 - 2 %时 ,TCP水解产物的抗酸性最强 相似文献
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Direct observation of the carrier transport process in InGaN quantum wells with a pn-junction 下载免费PDF全文
A new mechanism of light-to-electricity conversion that uses InGaN/GaN QWs with a p-n junction is reported.According to the well established light-to-electricity conversion theory,quantum wells(QWs) cannot be used in solar cells and photodetectors because the photogenerated carriers in QWs usually relax to ground energy levels,owing to quantum confinement,and cannot form a photocurrent.We observe directly that more than 95% of the photoexcited carriers escape from InGaN/GaN QWs to generate a photocurrent,indicating that the thermionic emission and tunneling processes proposed previously cannot explain carriers escaping from QWs.We show that photoexcited carriers can escape directly from the QWs when the device is under working conditions.Our finding challenges the current theory and demonstrates a new prospect for developing highly efficient solar cells and photodetectors. 相似文献