Thermodynamic parameters of urethane formation reactions and concomitant processes

Thermodynamic parameters of reactions of methyl and phenyl isocyanates with a series of compounds were determined by quantum-chemical calculations. The products of these reactions model for various functional groups present in commercial polyurethanes. The thermodynamic stability series for compounds formed from aliphatic and aromatic isocyanates were constructed.     

Diffraction of the Electromagnetic Wave on a Small Obstacle of Elliptic Form in a Layer

The problem on the diffraction of the electromagnetic plane wave on a small obstacle included in a layer is investigated. The obstacle is assumed to be an elliptic cylinder whose diameter and focal distance are small in comparison with the length of the incident wave. It is proved that the small obstacle radiates as a point source, and its amplitude is proportional to the area of the cross-section and the jumps of the dielectric and magnetic constants on the interfaces. Bibliography: 5 titles.     

Fredholm property of elliptic boundary value problems for partial differential and differential- operator equations

In this paper we find conditions on boundary value problems for elliptic differential-operator equations of the 4-th order in an interval to be fredholm. Apparently, this is the first publication for elliptic differential-operator equations of the 4-th order, when the principal part of the equation has the form u′?n(t) + Au″(t) + Bu(t), where AB^-1/2 is a bounded operator and is not compact. As an application we find some algebraic conditions on boundary value problems for elliptic partial equations of the 4-th order in cylindrical domains to be fredholm. Note that a new method has actually been suggested here for investigation of boundary value problems for elliptic partial equations of the 4-th order.     

An approach to deducing approximate solutions to the Cauchy problem for nonlinear differential equations

A new technique for the construction of numerical methods based on continued fractions is proposed. A characteristic feature of these algorithms is the fact that for certain values of the parameters it is possible to obtain both novel and traditional (explicit and implicit) numerical methods for the solution of the Cauchy problem for ordinary differential equations. Two-sided formulas are proposed by means of which it is possible to obtain on each integration step not only upper and lower approximations to the exact solution, but also information concerning the magnitude of the leading term of the error without the need for additional calculations of the right-hand side of the initial differential equation.Translated from Ukrainskii Matematicheskii Zhurnal, Vol. 44, No. 12, pp. 1695–1701, December, 1992.     

Statistic D-Property of Voronoi Summation Methods of Class W Q 2

We propose a general method for obtaining Tauberian theorems with remainder for one class of Voronoi summation methods for double sequences of elements of a locally convex, linear topological space. This method is a generalization of the Davydov method of C-points.     

Diffuse x-ray scattering study of the formation of microdefects in heat-treated dislocation-free large-diameter silicon wafers

Diffuse x-ray scattering (DXS) is used to study the formation of microdefects (MDs) in heat-treated dislocation-free large-diameter silicon wafers with vacancies. The DXS method is shown to be efficient for investigating MDs in silicon single crystals. Specific defects, such as impurity clouds, are found to form in the silicon wafers during low-temperature annealing at 450°C. These defects are oxygen-rich regions in the solid solution with diffuse coherent interfaces. In the following stages of decomposition of the supersaturated solid solution, oxide precipitates form inside these regions and the impurity clouds disappear. As a result of the decomposition of the supersaturated solid solution of oxygen, interstitial MDs form in the silicon wafers during multistep heat treatment. These MDs lie in the {110} planes and have nonspherical displacement fields. The volume density and size of MDs forming in the silicon wafers at various stages of the decomposition are determined.     

Rank of quantized universal enveloping algebras and modular functions

We compute an intrinsic rank invariant for quasitriangular Hopf algebras in the case of general quantum groupsU _q (g). As a function ofq the rank has remarkable number theoretic properties connected with modular covariance and Galois theory. A number of examples are treated in detail, including rank (U _q (su(3))) and rank (U _q (e ₈)). We briefly indicate a physical interpretation as relating Chern-Simons theory with the theory of a quantum particle confined to an alcove ofg.     

Reaction of 2-formyl-1,3-cyclohexanediones with cyanoacetamide

Chemistry of Heterocyclic Compounds -