Surface-field induced interband tunneling in InAs

Metal/insulator/semiconductor junctions are prepared on degeneratep-type InAs substrates with hole concentrations ranging from 2.3×10¹⁷ cm^–3 to 2.7×10¹⁸ cm^–3. The low work function of the top metal Yb, Al, or Au and charged interface states influence a two-dimensional (2D) electron inversion layer at the InAs surface. The insulator barrier that is formed by thermal oxidation is designed sufficiently thin, so that the bias voltage applied at the metal electrode mainly drops across the depletion layer separating the electron channel from the bulk. The current-voltage (I–V) characteristics exhibit strong negative differential conductance due to interband, tunneling from the 2D subband into the 3D valence band with peak-to-valley current ratios up to 3.1, 18, and 32 at 300 K, 77 K, and 4.2 K, respectively. In agreement with a theoretical model based on coherentelastic tunneling, the form of the I–V curves resembles those of double-barrier resonant tunnel devices rather than those of 3D Esaki diodes. The series resistance is obtained from the saturation of the differential conductance dI/dV at high forward bias and from the shift of structures in d² I/dV ² arising from phonon assisted tunneling.Dedicated to G. Lautz on the occasion of his 65th birthday     

Structural hierarchy of rock masses and the mechanisms of its formation

The formation mechanisms for the structural hierarchy in geological media are discussed. It is shown that the formation of such a hierarchy is caused by certain external and internal circumstances. The first ones consist in the fact that, because of external actions, the Earth’s poles continuously execute the translational and rotational motions responsible for a regular structure of rock fracture and for the appearance of the scale factor √2. The second ones consist in the fact that, under the action of many random factors and because of external actions, during the formation of geological media there appear dissipative structures and, hence, some self-similar fractal structures are formed.     

Combined supercritical-fluid chromatography/mass spectrometry in the analysis of diuron in plasma using on-line phase-system switching

On-line sample pretreatment by means of the phase-system switching approach is an interesting technique for the analysis of aqueous samples, e.g., plasma, by means of supercritical-fluid chromatography. In order to analyse plasma samples the following analytical procedure is used. The plasma sample is injected on to a short precolumn, which is washed with water and subsequently dried with nitrogen. Next, the solutes are desorbed with the supercritical mobile phase, analysed with packed-column supercritical-fluid chromatography and detected with either a UV detector or a mass spectrometer, equipped with a moving-belt interface. The herbicide diuron is selected as a test compound to study the feasibility of this approach. Using a selective detector the procedure is sufficiently sensitive to detect diuron in plasma, but not appropriate to detect the diuron metabolites in a post-mortem plasma sample. These have been identified with liquid chromatography/mass spectrometry. The detection limit of diuron in plasma using the procedure described is about 30 ng/mL.     

Burning Voltage in Atmospheric and Vacuum Short Arcs of Vanishing Length

The stepwise increase of the burning voltage of short break arcs has been found not only in a gas but also in vacuum. It is suggested that the effect is associated with the occurrence of a positive anode fall which enhances ionisation phenomena near the anode. This view is supported by the simultaneous registration of arc current, burning voltage, light emission from the anode region, of spectral lines of ions, atoms and continuum from the near anode plasma. The phenomena occur beyond a critical gap distance which can be related to the characteristic geometry of the discharge.