Structural Basis for Recognition of Guanosine by a Synthetic Tricyclic Cytosine Analogue: Guanidinium G‐Clamp

An oligonucleotide analogue containing a novel heterocyclic analogue, the guanidinium G‐clamp, was designed to allow formation of five H‐bonds to guanosine. The guanidinium group was introduced postsynthetically by treatment of the deprotected oligonucleotide containing a free amino group with a solution of 1H‐pyrazole‐1‐carboxamidine and purified by a combination of size‐exclusion chromatography and reversed‐phase HPLC. A single incorporation of this modification into an oligodeoxynucleotide sequence was found to increase duplex stability by 13° and 16° per modification to RNA and DNA, respectively. Crystals of a self‐complementary decamer sequence containing this modification were grown and diffracted to 1‐Å resolution. The structure was solved by molecular replacement and revealed that the modification forms additional H‐bonds to O(6) and N(7) of guanosine through the amino and imino N‐atoms, respectively. The origins of enhanced duplex stability are also attributed to increased stacking interactions mediated by the phenoxazine moiety of the G‐clamp and formation of H‐bond networks between the positively charged guanidinium group, H₂O molecules, and negatively charged O‐atoms from phosphates on the adjacent strand.     

Use of chlorinated carbon and silicon precursors for epitaxial growth of 4H‐SiC at very high growth rates

A possibility to apply the advantages of chlorinated carbon precursors, which had been previously used in low‐temperature epitaxial growth of 4H‐SiC, to achieve very high growth rates at higher growth temperatures was investigated. Silicon tetrachloride was used as the silicon precursor to suppress gas‐phase homogeneous nucleation. The temperature increase from 1300 °C (which is the temperature of the previously reported low‐temperature halo‐carbon epitaxial growth) to 1600 °C enabled an increase of the precursor flow rates and consequently of the growth rate from 5 to more than 100 μm/h without morphology degradation. High quality of the epilayers was confirmed by low‐temperature photoluminescence spectroscopy and time‐resolved luminescence. No evidences of homogeneous nucleation were detected, however, liquid Si droplet formation on the epilayer surface seems to remain a bottleneck at very high growth rate. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Influence of Sm<Superscript>3+</Superscript> ion in structural,morphological, and electrochemical properties of LiMn<Subscript>2</Subscript>O<Subscript>4</Subscript> synthesized by microwave calcination

LiSm_xMn_2–xO₄ samples were synthesized via co-precipitation technique. The structural properties of the synthesized materials were studied using X-ray diffraction analysis and it confirmed the cubic spinel structure for all the compounds. The lattice parameter of LiMn₂O₄ was observed to be 8.2347 Ǻ and it decreased with Sm³⁺ concentration, due to the shrinkage in cell volume aided by higher binding energy between Sm-O bond. The SEM micrographs were analyzed using Image processing software (Image-J) to ascertain the pore and grain properties. The microwave synthesis had been observed to control the bulk grain formation and had yielded lesser porous and nanoparticles. The particle size distributions obtained through photocross correlation laser diffraction analysis had shown that LiMn₂O₄ with 60 nm and Sm-doped compounds with ∼30 nm, respectively. The cyclic voltammetry studies had revealed the decrease in electrocatalytic behavior in the initial cycle for compounds doped with Sm³⁺ ion. The initial capacities of LiMn₂O₄, LiSm_0.05Mn_1.95O₄ and LiSm_0.10Mn_1.90O₄ substituted compounds were observed to be 134.87 mAhg⁻¹, 132.22 mAhg⁻¹ and 126.41 mAhg⁻¹, respectively. The cells were simulated using 1D model namely Dualfoil5.1 program. The simulated results coincide well with the measured results. The cycle life studies reveal 93% capacity retention of samarium-0.05-doped samples when compared with 78.4% of the LiMn₂O₄.     

Characterization of Phyllanthus amarus herb by inductively coupled plasma mass spectrometric (ICP-MS) analysis,optical absorption and electron paramagnetic resonance (EPR) spectroscopic methods

A powdered sample of Phyllanthus amarus herb of Kadapa district of Andhra Pradesh, India, is used in the present study. ICP-MS analysis indicates that copper is present in higher concentration when compared to other elements. Although the Pb is toxic, it is within the permissible limit. The evaluated soil and herb physico-chemical parameters indicate that the sample is acidic in nature in comparison with the soil. An EPR study on powdered sample confirms the presence of Fe(III), Mn(II) and Cu(II). Optical absorption spectrum indicates that Fe(III) impurity is present in octahedral structure whereas Cu(II) is present in rhombically distorted octahedral environment. MIR results are due to carbonate fundamentals.     

Effect of Electric Field on Dielectric Properties of SnO2 Sb2O3 and their Mixed Thin Films

Thin films of various thicknesses in the MIM structure have been prepared from the the powders of SnO₂, Sb₂O₃ and (SnO₂ + Sb₂O₃) of high purity by the thermal evaporation technique in a vacuum of 10⁻⁵ Torr. Dielectric properties of SnO₂, Sb₂O₃, and their mixed thin films have been studied with ac and dc electric fields and frequency. Capacitance and loss tangent are almost independent on dc voltage upto 1.0 V for SnO₂, 10.0 V for Sb₂O₃ and 2.5 V for mixed films. These capacitors become unstable at 1.0 V for SnO₂ films and 2.5 V for mixed films. For higher film thicknesses the decay in these films starts at higher voltages. Capacitance and loss tangent increases with applied ac voltage in SnO₂, Sb₂O₃, and their mixed films. A comparison of the capacitance values of SnO₂, Sb₂O₃, and their mixed films showed that the capacitance values are less in Sb₂O₃ as compared to SnO₂ films. In mixed films the capacitance is greater than the constituent films. These studies have shown that Sb₂O₃ films are found to be more stable compared to SnO₂ and their mixed films for ac and dc voltages. The results thus obtained on SnO₂, Sb₂O₃, and their films are presented and discussed.     

Aggregation‐Induced and Polymorphism‐Dependent Thermally Activated Delayed Fluorescence (TADF) Characteristics of an Oligothiophene: Applications in Time‐Dependent Live Cell Multicolour Imaging

Typically, molecules with a twisted donor–acceptor (D‐A) architecture have been exploited for constructing thermally activated delayed fluorescence (TADF) materials. Herein, we report the first example of a thiophene‐based thermally activated delayed fluorescent molecule without a D‐A architecture. Compound 1 (2,5‐bis(2,2‐di(thiophen‐2‐yl)vinyl)thiophene) is conformationally flexible and shows weak fluorescence in the solution state but displays bright TADFin both condensed and solid states. Compound 1 crystallized in two different polymorphs ( 1 a and 1 b ). Interestingly, both polymorphs show distinctly different TADF features. The broad spectral features and the TADF characteristics of 1 have been explored for the time‐dependent multicolor (green, yellow and red) imaging of living cells.     

Effect of annealing temperature on the electrical properties of Au/Ta2O5/n-GaN metal–insulator–semiconductor (MIS) structure

We report on the effect of an annealing temperature on the electrical properties of Au/Ta₂O₅/n-GaN metal–insulator–semiconductor (MIS) structure by current–voltage (I–V) and capacitance–voltage (C–V) measurements. The measured Schottky barrier height (Φ _bo) and ideality factor n values of the as-deposited Au/Ta₂O₅/n-GaN MIS structure are 0.93 eV (I–V) and 1.19. The barrier height (BH) increases to 1.03 eV and ideality factor decreases to 1.13 upon annealing at 500 ^°C for 1 min under nitrogen ambient. When the contact is annealed at 600 ^°C, the barrier height decreases and the ideality factor increases to 0.99 eV and 1.15. The barrier heights obtained from the C–V measurements are higher than those obtained from I–V measurements, and this indicates the existence of spatial inhomogeneity at the interface. Cheung’s functions are also used to calculate the barrier height (Φ _bo), ideality factor (n), and series resistance (R _s ) of the Au/Ta₂O₅/n-GaN MIS structure. Investigations reveal that the Schottky emission is the dominant mechanism and the Poole–Frenkel emission occurs only in the high voltage region. The energy distribution of interface states is determined from the forward bias I–V characteristics by taking into account the bias dependence of the effective barrier height. It is observed that the density value of interface states for the annealed samples with interfacial layer is lower than that of the density value of interface states of the as-deposited sample.