On entire nonnegative solutions of quasilinear inequalities of elliptic type that vanish on a set of positive measure

In the article, it is proved that any nonnegative solution of an elliptic quasilinear inequality that vanishes on a subset of positive measure is trivial. __________ Translated from Trudy Seminara imeni I. G. Petrovskogo, No. 25, pp. 112–118, 2005.     

Surface-barrier structures on AlxGa1−xSb. II. Band gap dependence of barrier height

The short-circuit photocurrent is used to find the forbidden gap width E_g and barrier height _B of Pd-n-Al_xGa_1–xSb (0.1 s x 0.7) surface-barrier structure fabricated electrochemically. The barrier height was also determined from the capacitive voltage cutoff and the current-voltage characteristics. For metal-n-Al_xGa_1–xSb contacts the linear approximation to _B(E_g) is given by _B = 0.64E_g + 0.16 eV. In some samples the photoresponse spectrum has a hump, indicating the effects of deep levels.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 26–31, June, 1979.     

Reconstructing spatial phase distributions and object images from speckle intensity patterns of the diffraction field

A method of reconstruction of the spatial phase distribution and the image of a scattering object from a recorded speckle pattern of the diffraction field has been developed and verified on test objects. The proposed method is based on an assumption that, for objects of a certain class, the phase difference between adjacent speckles in the far zone is equal to π. Digital records of Fourier speckle patterns and the corresponding digitally reconstructed images are presented.     

Doping of solid solutions in liquid epitaxy. III. Tellurium in AlxGa1−xSb

A calculation is made of the dependences of the coefficient of the tellurium distribution K_Te and the electron concentration n in Al_xGa_1–xSb on the composition of the solid solution and the growth temperature. It is shown that K_Te must decrease with increasing x. The dependence of K_Te on the temperature is also determined by x. Experimental results were obtained on Al_xGa_1–x Sb (0 x 0.74) films grown by liquid epitaxy. The electron concentration in the films was measured through the thermoelectric power and the capacitance-voltage characteristics of Schottky barriers. Satisfactory agreement with the results of the calculation was obtained.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 19–25, April, 1980.We thank G. K. Arbuzov for assistance in preparing the surface-barrier structures.     

Evolution of a Non-Uniform Deformed State in the Structure of Zinc-Chalcogenide Cubic Crystals Doped by 3 d Ions

The real structure of bulk Zn1 – хМхSe (S) crystals of diluted magnetic semiconductors with М = V, Cr, Fe, Co, Ni 3d impurities is characterized by neutron diffraction. These impurities are known to greatly destabilize even the initial lattices of pure zinc chalcogenides. Data on the resulting non-uniform microstrain field induced by atomic displacements are obtained from the structural peaks along the tangential and radial directions on the above crystals within a dopant concentration range of 0.01 ≤ х ≤ 0.10. Additional nodes with q = (1/3 1/3 1/3) 2π/a (q is the wave vector and a is the cubic unit cell) emerging in the reciprocal lattice of the cubic structure are considered as evidence for a pre-transition to the fcc (face-centered cubic)–hcp (hexagonal close-packed) phase state, which implies transitions from the fcc lattice along an 8-ray non-Lifshitz star with the wave vector k5 = μ(b1 + b2 + b3), where b1, b2, b3 are the reciprocal lattice vectors and μ ≈ 1/3.     

Structure and phase composition of thin a-C:H films modified by Ag and Ti

The structure and phase composition of thin a-C:H and a-C:H〈M〉 films (M = Ag, Ti, or Ag + Ti) have been studied by Raman and X-ray photoelectron spectroscopy. The a-C:H〈M〉 films were prepared by ion-plasma magnetron sputtering of a combined target of graphite and metal in an Ar–CH₄ gas mixture. The Raman spectra of these films indicate that their structure is amorphous. The a-C:H〈Ag + Ti〉 films have a more graphitized structure in comparison with pure a-C:H films and films containing only one metal. It is established that carbon in the a-C:H〈Ag + Ti〉 films is in the sp ², sp ³, and C=O states, which are characteristic of the a-C:H, a-C:H〈Ag〉, and a-C:H〈Ti〉 films. In addition, there are also ether (–C–O–C–) or epoxy (?C?O–) carbon groups in the a-C:H〈Ag + Ti〉 films. It has been revealed that silver atoms in the a-C:H〈Ag〉 and a-C:H〈Ag + Ti〉 films form no chemical bonds with carbon, oxygen, and titanium. Titanium in the a-C:H〈Ti〉 and a-C:H〈Ag + Ti〉 films exists in the form of titanium IV oxide (TiO₂).     

Simulation of the processes of polarization switching in ferro- and antiferroelectric polymer systems

The ordering of ferroelectric and antiferroelectric polymer systems in an external electric field is studied by the Monte Carlo method. The threshold value of electric field strength at which the antiparallel packing of chains is converted into parallel is calculated. The hysteresis curves are studied and compared to experimental data.     

Uniqueness of the solutions of the cauchy problem and of boundary-value problems in unbounded domains for certain classes of nonlinear degenerate parabolic equations

The Cauchy problem and boundary value problems in unbounded domains are considered for certain classes of nonlinear degenerate parabolic equations, which contain as a particular case the equations of nonstationary filtration.Translated from Trudy Seminara imeni I. G. Petrovskogo, No. 11, pp. 12–31, 1986.The author expresses her deep gratitude to Olga Arsenovna Oleinik for the formulation of the problem and for her constant interest in the paper.